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Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna·P. Dollfus·S. Galdin-Retailleau
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Abstract

Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mueff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained Si/ Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/ Si interface roughness, as well as surface roughness of the SiGe substrate on which strained Si is grown.

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V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau. 2005-05-20. Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation. https://doi.org/10.1016/j.sse.2005.06.013

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