Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · cond-mat/0411478

Theory of charge sensing in quantum-dot structures

Richard Berkovits·Felix von Oppen·Yuval Gefen
View original source ↗Read source document ↗Export metadata ↓

Abstract

Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of current-carrying states due to the capacitive coupling to trap states which are weakly coupled to the leads. In agreement with recent experiments, it results in a variety of characteristic behaviors ranging from asymmetric Coulomb-blockade peaks to sawtooth- and dome-like structures. Temperature introduces distinct asymmetric smearing of these features and correlations in the conductance provide a fingerprint of charge-sensing behavior.

Explore related subjects

cond-mat.mes-hall

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Richard Berkovits, Felix von Oppen, Yuval Gefen. 2004-11-18. Theory of charge sensing in quantum-dot structures. https://doi.org/10.1103/physrevlett.94.076802

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Surface effects on the plasmons in two-dimemsional heterostructures: Application to tilted semi-Dirac materials

We derived closed-form analytic expressions for the plasmon dispersion equations for two and three monolayers embedded in a non-uniform dielectric medium with a surface. There is no electron tunneling between the layers or hybridization of the layer polarizability. The dispersion equations are deduced from calculated expressions for the corresponding surface response functions (SRFs) generated by a frequency-dependent external polarized electromagnetic field. The SRF is calculated by employing Maxwell's equations in conjunction with linear response theory.The dispersion functions reduce to well-known results for two and three monolayers embedded in a bulk medium with a uniform dielectric background. We examine the role played by a surface (i.e., homogeneous versus inhomogeneous dielectric background screening), for gapped tilted semi-Dirac materials (TSDMs) with half-linear, half-parabolic spectrums whose energy bands are tilted, anisotropic in wave vector space, and a gap is induced. The number of plasmon branches is always equal to the number of monolayer. However, the separation between these branches depends on the distance between the layers and crucially on the chosen dielectric material between the layers and whether there is air or a substrate surrounding the layered structure. For gapped TSDM, the Landau damping, i.e., Plasmon lifetime, varies from branch to branch as well as along the branch for a chosen wave vector direction. We examine these novel behaviors for two and three gapped TSDM monolayers assuming different values for the dielectric background. Our results could be useful for comparing theory with experimental data from electron energy loss spectroscopy (EELS) data.

cond-mat.mes-hall↗
arXiv2026

Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model

Surface roughness (SR) scattering in inversion layers of bulk-MOSFETs is studied from the atomistic and quantum-mechanical viewpoints. Contrary to the usual macroscopic landscape of the roughness deviation, we introduce a stochastic deviation at each atomic site to take account of the discontinuity of the spatial derivatives of the electrostatic potential and wave-function at the semiconductor/dielectric interface, leading to an ambiguity in roughness positions. It is shown that SR parameters are consistent with those known from the experiments and, thus, there is no discrepancy problem associated with the roughness parameters in our model. The self-consistent scattering rate is derived under the framework of the Green's functions scheme: We find that the SR scattering rates are intrinsically nonlocal (non-diagonal) with respect to subband indices and greatly deviate from those based on Fermi's golden rule in the regimes of strong effective fields and/or low electron energies. As a result, the conventional SR model tends to underestimate the surface-roughness-limited mobility.

cond-mat.mes-hall↗
arXiv2026

Comparative Evaluation of Encapsulation Methods for Endohedral Doping of Single-Wall Carbon Nanotubes

Single wall carbon nanotubes (SWCNTs) are promising building blocks for nanoelectronic and optoelectronic devices, yet reliable and stable doping, particularly n type, remains challenging due to strong environmental sensitivity and competing extrinsic effects. Encapsulation of charge transfer molecules within the SWCNT cavity offers a promising route to stable doping while preserving the nanotubes outer surface for subsequent processing. Here, we systematically investigate the filling of arc discharge SWCNTs with the electron donor tetrathiafulvalene and electron acceptor tetracyanoquinodimethane, comparing different methods for filling, including melt filling, solution reflux, and vacuum phase sublimation. We follow the entire processing workflow from raw, unfilled powders to aqueous dispersions and employ density gradient ultracentrifugation to separate filled from empty nanotubes as well as metallic from semiconducting ones. Encapsulation efficiency and electronic modification are assessed using absorption spectroscopy, resonant Raman scattering, thermogravimetric analysis, X-ray photoelectron spectroscopy and electron paramagnetic resonance. Finally, we introduce a complementary vacuum-phase method that removes externally adsorbed molecules without extensive solvent washing, enabling cleaner encapsulated systems.

cond-mat.mes-hall↗