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Ferromagnetism and Temperature-Driven Reorientation Transition in Thin Itinerant-Electron Films

T. Herrmann·M. Potthoff·W. Nolting
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Abstract

The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together with the dipole interaction and a layer-dependent anisotropy field. The isotropic part of the model is treated by use of a generalization of the spectral-density approach to the film geometry. The magnetic properties of the film are investigated as a function of temperature and film thickness and are analyzed in detail with help of the spin- and layer-dependent quasiparticle density of states. By calculating the temperature dependence of the second-order anisotropy constants we find that both types of reorientation transitions, from out-of-plane to in-plane (``Fe-type'') and from in-plane to out-of-plane (``Ni-type'') magnetization are possible within our model. In the latter case the inclusion of a positive volume anisotropy is vital. The reorientation transition is mediated by a strong reduction of the surface magnetization with respect to the inner layers as a function of temperature and is found to depend significantly on the total band occupation.

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T. Herrmann, M. Potthoff, W. Nolting. 1998-04-28. Ferromagnetism and Temperature-Driven Reorientation Transition in Thin Itinerant-Electron Films. https://doi.org/10.1103/physrevb.58.831

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