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Maximum Metallic Conductivity in Si-MOS Structures

V. M. Pudalov·G. Brunthaler·A. Prinz·G. Bauer
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Abstract

We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.

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V. M. Pudalov, G. Brunthaler, A. Prinz, G. Bauer. 1998-12-23. Maximum Metallic Conductivity in Si-MOS Structures. https://doi.org/10.1103/physrevb.60.r2154

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