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Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment

E. Alagoz·V. Chiochia·M. Swartz
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Abstract

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 $μ$m along the CMS $r-ϕ$ plane can be achieved after an irradiation fluence of $5.9\times10^{14}$ n$_{\rm{eq}}/$cm$^2$. In addition, we show that systematic errors in the position determination can be largely reduced by applying $η$ corrections.

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E. Alagoz, V. Chiochia, M. Swartz. 2005-12-05. Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment. https://doi.org/10.1016/j.nima.2006.05.027

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