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Non-Markovian Stochastic Resonance: three state model of ion channel gating

I. Goychuk·P. Hanggi·J. L. Vega·S. Miret-Artes
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Abstract

Stochastic Resonance in single voltage-dependent ion channels is investigated within a three state non-Markovian modeling of the ion channel conformational dynamics. In contrast to a two-state description one assumes the presence of an additional closed state for the ion channel which mimics the manifold of voltage-independent closed subconformations (inactivated ``state''). The conformational transition into the open state occurs through a domain of voltage-dependent closed subconformations (closed ``state''). At distinct variance with a standard two-state or also three-state Markovian approach, the inactivated state is characterized by a broad, non-exponential probability distribution of corresponding residence times. The linear response to a periodic voltage signal is determined for arbitrary distributions of the channel's recovery times. Analytical results are obtained for the spectral amplification of the applied signal and the corresponding signal-to-noise ratio. Alternatively, these results are also derived by use of a corresponding two-state non-Markovian theory which is based on driven integral renewal equations [I. Goychuk and P. Hanggi, Phys. Rev. E 69, 021104 (2004)]. The non-Markovian features of stochastic resonance are studied for a power law distribution of the residence time-intervals in the inactivated state which exhibits a large variance. A comparison with the case of bi-exponentially distributed residence times possessing the same mean value, i.e. a simplest non-Markovian two-state description, is also presented.

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I. Goychuk, P. Hanggi, J. L. Vega, S. Miret-Artes. 2006-01-11. Non-Markovian Stochastic Resonance: three state model of ion channel gating. https://doi.org/10.1103/physreve.71.061906

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