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Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

Sebastien Forget·Frederic Druon·Francois Balembois·Patrick Georges·Nicolas Landru·Jean Philippe Feve·Jiali Lin·Zhiming Weng
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Abstract

the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

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Sebastien Forget, Frederic Druon, Francois Balembois, Patrick Georges, Nicolas Landru, Jean Philippe Feve, Jiali Lin, Zhiming Weng. 2006-09-29. Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser. https://doi.org/10.1016/j.optcom.2005.09.053

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