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On the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography

Mankei Tsang
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Abstract

The proposal of quantum lithography [Boto et al., Phys. Rev. Lett. 85, 2733 (2000)] is studied via a rigorous formalism. It is shown that, contrary to Boto et al.'s heuristic claim, the multiphoton absorption rate of a ``NOON'' quantum state is actually lower than that of a classical state with otherwise identical parameters. The proof-of-concept experiment of quantum lithography [D'Angelo et al., Phys. Rev. Lett. 87, 013602 (2001)] is also analyzed in terms of the proposed formalism, and the experiment is shown to have a reduced multiphoton absorption rate in order to emulate quantum lithography accurately. Finally, quantum lithography by the use of a jointly Gaussian quantum state of light is investigated, in order to illustrate the trade-off between resolution enhancement and multiphoton absorption rate.

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Mankei Tsang. 2007-02-28. On the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography. https://doi.org/10.1103/physreva.75.043813

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