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A. Grodecka

Publications and source records attributed to A. Grodecka.

6 recordsLinked to original sources
arXiv2009

Indirect spin dephasing via charge state decoherence in optical control schemes in quantum dots

We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via conditional optically induced charge evolution even in the absence of any direct interaction between the spin and its environment. A generic model for the indirect dephasing with a three-component system with spin, charge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation in a quantum dot with a microscopic description of the charge-phonon interaction taking into account its non-Markovian nature.

cond-mat.mes-hall↗
arXiv2009

Interplay and optimization of decoherence mechanisms in the optical control of spin quantum bits implemented on a semiconductor quantum dot

We study the influence of the environment on an optically induced rotation of a single electron spin in a charged semiconductor quantum dot. We analyze the decoherence mechanisms resulting from the dynamical lattice response to the charge evolution induced in a trion-based optical spin control scheme. Moreover, we study the effect of the finite trion lifetime and of the imperfections of the unitary evolution such as off-resonant excitations and the nonadiabaticity of the driving. We calculate the total error of the operation on a spin-based qubit in an InAs/GaAs quantum dot system and discuss possible optimization against the different contributions. We indicate the parameters which allow for coherent control of the spin with a single qubit gate error as low as $10^{-4}$.

cond-mat.mes-hall↗
arXiv2009

Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules

We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singlet-singlet relaxation in a two-electron doped structure is considered. The influence of Coulomb interaction is discussed via comparison with a single electron system. We find that the relaxation rate reaches similar values in the two cases but the Coulomb interaction shifts the maximum rates towards larger separations between the dots. The difference in electron-phonon interaction between deformation potential and piezoelectric coupling is investigated. We show that the phonon-induced tunneling between two-electron singlet states is a fast process, taking place on the time scales of the order of a few tens of picoseconds.

cond-mat.mes-hall↗
arXiv2008

Theoretical study of phonon-assisted singlet-singlet relaxation in two-electron semiconductor quantum dot molecules

Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic phonon modes via deformation potential and piezoelectric coupling. We show that piezoelectric mechanism for the considered system is of great importance and for some ranges of quantum dot molecule parameters is the dominant contribution to relaxation. It is shown that the phonon-assisted tunneling rates reach much higher values (up to 160 ns$^{-1}$ even at zero temperature) in comparison with other decoherence processes like spin-orbit coupling ($\sim$ 0.01 ns$^{-1}$). The influence of Coulomb interaction is discussed and its consequences are indicated. We calculate the relaxation rates for GaAs quantum dot molecules and study the dependence on quantum dot size, distance and offset between the constituent quantum dots. In addition the temperature dependence of the tunneling rates is analyzed.

cond-mat.mes-hall↗
arXiv2006

Phonon-induced decoherence for a quantum dot spin qubit operated by Raman passage

We study single-qubit gates performed via stimulated Raman adiabatic passage (STIRAP) on a spin qubit implemented in a quantum dot system in the presence of phonons. We analyze the interplay of various kinds of errors resulting from the carrier-phonon interaction as well as from quantum jumps related to nonadiabaticity and calculate the fidelity as a function of the pulse parameters. We give quantitative estimates for an InAs/GaAs system and identify the parameter values for which the error is considerably minimized, even to values below $10^{-4}$ per operation.

cond-mat.mes-hall↗