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Alex Bogan

Publications and source records attributed to Alex Bogan.

7 recordsLinked to original sources

Sound-wave interference reveals the symmetry of a quantum transition

A single sound quantum emitted from two places interferes with itself, like a particle passing through two slits. The fringe position reveals whether the sources emit with the same sign (symmetric) or opposite signs (antisymmetric). Knowing this symmetry is important because qubits in solids lose energy by emitting such sound quanta, phonons. For a qubit shared between two sites, antisymmetric emission cancels at long wavelengths, suppressing energy loss, whereas symmetric emission does not. Lifetime measurements give only the total loss and cannot distinguish them. Such fringes appear in double quantum dots, but their position has not been analysed. Here we measure it for single phonons emitted as one hole tunnels between two gallium arsenide quantum dots. Using a quantitative model of sound focusing in the crystal, we find that the two dots emit antisymmetrically, as expected for a moving charge, with only a small symmetric part. Spin-flip transitions in a magnetic field weaken the fringes without shifting them. For double-dot charge qubits, antisymmetric emission is predicted to reduce phonon losses strongly at the frequencies where qubits operate, and phonon interferometry gives a direct way to measure how qubits release energy and to design longer-lived qubits.

quant-ph↗

Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures

In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-in defects, which can all limit device performance. An additional and important metric to consider is the strength of the dielectric constant. Hexagonal boron nitride (hBN) is the benchmark gate dielectric for two-dimensional van der Waals heterostructures, owing to its wide bandgap, and atomically flat interface. At the same time, its dielectric constant (2--4) highlights the opportunity to explore alternative higher-permittivity van der Waals dielectrics that provide stronger electrostatic control. Previous work established lanthanum oxybromide (LaOBr), a layered dielectric with a predicted dielectric constant of 12.5, as a potential dielectric for van der Waals heterostructures. Using graphene field-effect devices with LaOBr, we show that the leakage-onset and breakdown fields decrease systematically with thickness. Dual-gate capacitance measurements combined with a dead-layer model reveal a bulk dielectric constant of $\varepsilon_{\mathrm{bulk}} = 12.2$, in agreement with theory, while interfacial dead-layers cause the effective dielectric constant to vary from 6 to 11 across multiple thicknesses. Benchmarked against established gate dielectrics, LaOBr combines breakdown fields comparable to hBN with dielectric constants 2 to 3 times larger. By establishing the operating regime of devices with various thicknesses, we further confirm the advantage of LaOBr over hBN for high-capacitance gate-dielectric operation. These results validate LaOBr as a promising dielectric for integration into two-dimensional heterostructures, and establish thickness-dependent benchmarking as essential for evaluating emerging layered dielectric materials.

cond-mat.mes-hall↗

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

cond-mat.mes-hall↗

Charge detection using a WSe$_2$ van der Waals heterostructure

Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits.

cond-mat.mes-hall↗

Gate controlled quantum dots in monolayer WSe2

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.

cond-mat.mes-hall↗

Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin flipping tunneling processes.

cond-mat.mes-hall↗

Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

cond-mat.mes-hall↗