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Anastasios Markou

Publications and source records attributed to Anastasios Markou.

At least 19 recordsLinked to original sources

Efficient spin-pumping and spin transport across epitaxial Mn$_3$Sn(0001) noncollinear antiferromagnet/permalloy interfaces

The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while overcoming some limitations associated with conventional ferromagnets and heavy metals. Kagome topological antiferromagnetic Weyl semimetals, such as Mn3Sn, present unique advantages owing to their distinct magnetic order and significant Berry curvature-driven transport phenomena. In this study, we systematically investigate spin current generation and spin-to-charge conversion phenomena in epitaxial (0001)-oriented Mn$_3$Sn thin films. Our findings reveal a spin Hall angle of 0.9$\%$ and a nearly isotropic in-plane spin Hall conductivity of ~44.4 ($\hbar$/e) $\Omega^{-1}$.cm$^{-1}$ at room temperature, originating from a combination of intrinsic and extrinsic contributions, as discussed in light of first-principle calculations. Furthermore, in Mn$_3$Sn(0001)/Ni$_{81}$Fe$_{19}$ heterostructures, we observe a high spin-mixing conductance of 28.52 nm$^{-2}$ and an interfacial spin-transparency of approximately 72$\%$. Notably, we also find that the spin diffusion length in Mn$_3$Sn(0001) epitaxial films exceeds 15 nm at room temperature. Our results highlight the potential, and limitations, of the topological Weyl noncollinear antiferromagnet Mn$_3$Sn as an efficient material for spin transport and conversion in prospective spintronic applications.

cond-mat.mtrl-sci

How to Measure and Model Light-Induced Spin Transfer

Femtosecond laser light can transfer spin angular momentum between magnetic subspecies that exhibit hybridized valence bands within an alloy or compound, and represents the fastest route for manipulating the magnetization of a material. To date, ultrafast spin transfer has predominantly been explained in terms of the initial and final states available for laser excitation. Here, by comparing the measured and calculated dynamics across the entire $M$-edges of two very similar Heusler compounds, $Co_2MnGa$ and $Co_2MnGe$ as well as a sample of elemental Co, we find that simply accounting for the initial and final electron states available for laser excitation cannot alone explain the experimental observations. The influence of spin lifetimes must also be included, due to the shifting of the Fermi level upon replacing Ga with Ge, or the presence of crystalline disorder. This explains why the ordered $L2_1$ phase of $Co_2MnGa$ demonstrates strong laser-induced magnetic signal enhancements across the entire Co-edge, while similar enhancements were not observed in partially disordered $Co_2MnGe$. Although intra-site spin-transfers were expected in the minority channel in pure Co due to the presence of many more available states in the minority channel above the Fermi level, no such signal was observed due to very short few-femtosecond spin lifetimes in a metal. Finally, we identify key regions in the magnetic asymmetry where a transiently enhanced signal could be misinterpreted as a light-induced spin-transfer signature.

cond-mat.mtrl-sci

Unidirectional motion of topological defects mediating continuous rotation processes

Topological defects play a critical role across many fields, mediating phase transitions and macroscopic behaviors as they move through space. Their role as robust information carriers has also generated much attention. However, controlling their motion remains challenging, especially towards achieving motion along well-defined paths which typically require predefined structural patterning. Here we demonstrate the tunable, unidirectional motion of topological defects, specifically magnetic dislocations in a weak magnetic stripe pattern, induced by external magnetic field in a laterally unconfined thin film. This motion is shown to mediate the overall continuous rotation of the stripe pattern. We determine the connection between the unidirectional motion of dislocations and the underlying three-dimensional (3D) magnetic structure by performing 3D magnetic vectorial imaging with in situ magnetic fields. A minimal model for dislocations in stripe patterns that encodes the symmetry breaking induced by the external magnetic field reproduces the motion of dislocations that facilitate the 2D rotation of the stripes, highlighting the universality of the phenomenon. This work establishes a framework for studying the field-driven behavior of topological textures and designing materials that enable well defined, controlled motion of defects in unconfined systems, paving the way to manipulate information carriers in higher-dimensional systems.

cond-mat.mes-hall

Spin-to-charge conversion in orthorhombic RhSi topological semimetal crystalline thin films

The rise of non-magnetic topological semimetals, which provide a promising platform for observing and controlling various spin-orbit effects, has led to significant advancements in the field of topological spintronics. RhSi exists in two distinct polymorphs: cubic and orthorhombic crystal structures. The noncentrosymmetric B20 cubic structure has been extensively studied for hosting unconventional multifold fermions. In contrast, the orthorhombic structure, which crystallizes in the Pnma space group (No. 62), remains less explored and belongs to the family of topological Dirac semimetals. In this work, we investigate the structural, magnetic, and electrical properties of RhSi textured-epitaxial films grown on Si(111) substrates, which crystallize in the orthorhombic structure. We investigate the efficiency of pure spin current transport across RhSi/permalloy interfaces and the subsequent spin-to-charge current conversion via inverse spin Hall effect measurements. The xperimentally determined spin Hall conductivity in orthorhombic RhSi reaches a maximum value of 126 ($\hbar$/e)($\Omega$.cm)$^{-1}$ at 10 K, which aligns reasonably well with first-principles calculations that attribute the spin Hall effect in RhSi to the spin Berry curvature mechanism. Additionally, we demonstrate the ability to achieve a sizable spin-mixing conductance (34.7 nm$^{-2}$) and an exceptionally high interfacial spin transparency of 88$%$ in this heterostructure, underlining its potential for spin-orbit torque switching applications. Overall, this study broadens the scope of topological spintronics, emphasizing the controlled interfacial spin-transport processes and subsequent spin-to-charge conversion in a previously unexplored topological Dirac semimetal RhSi/ferromagnet heterostructure.

cond-mat.mtrl-sci

Superconducting Penetration Depth Through a Van Hove Singularity: Sr$_2$RuO$_4$ Under Uniaxial Stress

In the unconventional superconductor Sr$_2$RuO$_4$, uniaxial stress along the $[100]$ direction tunes the Fermi level through a Van Hove singularity (VHS) in the density of states, causing a strong enhancement of the superconducting critical temperature $T_\textrm{c}$. Here, we report measurements of the London penetration depth $\lambda$ as this tuning is performed. We find that the zero-temperature superfluid density, here defined as $\lambda(0)^{-2}$, increases by $\sim$15%, with a peak that coincides with the peak in $T_\textrm{c}$. We also find that the low temperature form of $\lambda(T)$ is quadratic over the entire strain range. Using scanning tunneling microscopy, we find that the gap increases from $\Delta_0 \approx 350~\mu$eV in unstressed Sr$_2$RuO$_4$ to $\Delta_0 \approx 600~\mu$eV in a sample strained to near the peak in $T_c$. With a nodal order parameter, an increase in the superconducting gap could bring about an increase in the superfluid density through reduced sensitivity to defects and through reduced non-local effects in the Meissner screening. Our data indicate that tuning to the VHS increases the gap throughout the Brillouin zone, and that non-local effects are likely more important than reduced scattering.

cond-mat.supr-con

Optically controlling the competition between spin flips and intersite spin transfer in a Heusler half-metal on sub-100 fs timescales

The direct manipulation of spins via light may provide a path toward ultrafast energy-efficient devices. However, distinguishing the microscopic processes that can occur during ultrafast laser excitation in magnetic alloys is challenging. Here, we study the Heusler compound Co2MnGa, a material that exhibits very strong light-induced spin transfers across the entire M-edge. By combining the element-specificity of extreme ultraviolet high harmonic probes with time-dependent density functional theory, we disentangle the competition between three ultrafast light-induced processes that occur in Co2MnGa: same-site Co-Co spin transfer, intersite Co-Mn spin transfer, and ultrafast spin-flips mediated by spin-orbit coupling. By measuring the dynamic magnetic asymmetry across the entire M-edges of the two magnetic sublattices involved, we uncover the relative dominance of these processes at different probe energy regions and times during the laser pulse. Our combined approach enables a comprehensive microscopic interpretation of laser-induced magnetization dynamics on timescales shorter than 100 fs.

cond-mat.mtrl-sci

Helicity-dependent Ultrafast Photocurrents in Weyl Magnet Mn$_3$Sn

We present an optical pump-THz emission study on non-collinear antiferromagnet Mn$_3$Sn. We show that Mn$_3$Sn acts as a source of THz radiation when irradiated by femtosecond laser pulses. The polarity and amplitude of the emitted THz fields can be fully controlled by the polarisation of optical excitation. We explain the THz emission with the photocurrents generated via the photon drag effect by combining various experimental measurements as a function of pump polarisation, magnetic field, and sample orientation with thorough symmetry analysis of response tensors.

cond-mat.mes-hall

Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi

The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi.

cond-mat.mtrl-sci

Giant intrinsic anomalous terahertz Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa at room temperature

We report measurement of terahertz anomalous Hall conductivity and Faraday rotation in the magnetic Weyl semimetal Co$_2$MnGa thin films as a function of the magnetic field, temperature and thickness, using time-domain terahertz spectroscopy. The terahertz conductivity shows a thickness-independent anomalous Hall conductivity of around 600 $\Omega^{-1}\cdot cm^{-1}$ at room temperature, and it is also frequency-independent from 0.2-1.5 THz. The magnitude of the longitudinal and Hall conductivities, the weak spin-orbit coupling, and the very close positioning of Weyl points to the chemical potential all satisfy the criteria for intrinsic anomalous Hall conductivity. First-principle calculation also supports the frequency-independent intrinsic anomalous Hall conductivity at low frequency. We also find a thickness-independent Faraday rotation of 59 ($\pm6$) mrad at room temperature, which comes from the intrinsic Berry curvature contribution. In the thinnest 20 nm sample, the Faraday rotation divided by the sample thickness reaches around 3 mrad/nm due to Berry curvature, and is the largest reported at room temperature. The giant Verdet constant of the order of 10 $^{6}$ rad m $^{-1}$ T $^{-1}$ at room temperature and the large Hall angle around 8.5 $\%$ from 0.2-1.5 THz indicates that Co$_2$MnGa is promising for THz spintronics at room temperature.

cond-mat.mtrl-sci

Spin-voltage-driven efficient terahertz spin currents from the magnetic Weyl semimetals Co$_2$MnGa and Co$_2$MnAl

Magnetic Weyl semimetals are an emerging material class that combines magnetic order and a topologically non-trivial band structure. Here, we study ultrafast optically driven spin injection from thin films of the magnetic Weyl semimetals Co$_2$MnGa and Co$_2$MnAl into an adjacent Pt layer by means of terahertz emission spectroscopy. We find that (i) Co$_2$MnGa and Co$_2$MnAl are efficient terahertz spin-current generators reaching efficiencies of typical 3d-transition-metal ferromagnets such as Fe. (ii) The relaxation of the spin current provides an estimate of the electron-spin relaxation time of Co$_2$MnGa (165 fs) and Co$_2$MnAl (102 fs), which is comparable to Fe (92 fs). Both observations are consistent with a simple analytical model and highlight the large potential of magnetic Weyl semimetals as spin-current sources in terahertz spintronic devices. Finally, our results provide a strategy to identify magnetic materials that provide maximum spin current amplitudes for a given deposited optical energy density.

cond-mat.mes-hall

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented.

cond-mat.mtrl-sci

Hard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature

Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.

cond-mat.mtrl-sci

Role of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn$_{x}$PtSn films

Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the magnetic and transport properties as a function of magnetic field and temperature. We focus on the anomalous and chiral-type Hall effects and the behavior of the dc-magnetization, in relation to chiral spin textures. We further determine the stable crystal phase for a relative Mn concentration between 1.5 and 1.85 in the $I\overline{4}2d$ structure. We observe a spin-reorientation transition in all compounds studied, which is due to the competition of exchange interactions on different Mn sublattices. We discuss our results in terms of exchange interactions and compare them with theoretical atomistic spin calculations.

cond-mat.mtrl-sci

Origin of the quasi-quantized Hall effect in ZrTe5

The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, thermoelectric and charge transport measurements on ZrTe5 in the quantum Hall regime. The measured thermodynamic properties: magnetization and ultrasound propagation, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response is an intrinsic property of the 3D electronic structure. Our findings render the Hall effect in ZrTe5 a truly 3D counterpart of the QHE in 2D systems.

cond-mat.str-el

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn$_{3}$Sn

Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $\sigma_{\mathrm{xy}}$ ($\mu_{0}H$ = 0 T) = 21 $\mathrm{\Omega}^{-1}\mathrm{cm}^{-1}$ and coercive field $\mu_{0}H_{\mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.

cond-mat.mes-hall

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.

cond-mat.mes-hall

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet.

cond-mat.mes-hall

Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa

Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications.

cond-mat.mtrl-sci