arXiv subjects

Arramel

Publications and source records attributed to Arramel.

6 recordsLinked to original sources

arXiv2025

Cation Engineering of Cu-Doped CsPbI3: Lead Substitution and Dimensional Reduction for Improved Scintillation Performance

To date, inorganic halide perovskite nanocrystals show promising contributions in emerging luminescent materials due to their high tolerance to defects. In particular, the development of cesium lead iodide (CsPbI3) has shown its efficiency for light-harvesting properties. However, further implementation is hindered due to the toxicity of the lead content. Therefore, in this study, we introduced Cu atoms to partially substitute Pb atoms (5% Cu) in the CsPbI3 lattice as a solution to reduce Pb toxicity. A partial lead material is substituted using Cu displays a larger Stokes shift (-67 nm) compared to the pristine, and resulted doped CsPbI3 not undergo the undesired self absorption. An outcome is focused on the champion of fast-component (tau_1) decay time ~0.6 ns. Temperature-dependent radioluminescence outlines an incremental change in the emission intensity is marginally centered at 713 +- 16 nm, which indicates Cu-doped CsPbI3 is not greatly affected by temperature. In addition, we report that the light yield (LY) pristine CsPbI3 after doping is increased to 3.0 +- 0.8 photons/keV. Our work provides physical insights into a tunable scintillation property using transition metal doping toward lead-free based scintillating perovskites.

cond-mat.mtrl-sci↗

arXiv2022

Unraveling the nature of thermally induced spin reorientation in NdFe1-xCrxO3

Understanding spin control mechanisms is an important part of condensed matter physics and the theoretical basis for designing spintronic devices. In this letter, based on four-sublattices molecular field theory, we propose that the underlying NdFe1-xCrxO3 magnetic mechanism is driven by spin reorientation sensitive to temperature. The actual coupling angular momentum, angle between the Nd3+ and Cr3+/Fe3+ moments at the given temperature is realized via the Nd3+ magnetic moment projection onto the Cr3+/Fe3+ plane. As the temperature increases, the angle between the moment of Nd3+ and the moment of Cr3+/Fe3+ decreases monotonically. In this work, the magnetic mechanism of NdFe1-xCrxO3 (x=0.1, 0.9), the close relationship between A/B angle and temperature are presented, which laid a theoretical foundation for the design of new multifunctional magnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe$_2$

Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe$_2$ adopts a layer-by-layer growth mode on HOPG and shows a decreasing band gap with increasing layer number. For the layer numbers from one to four, PtSe$_2$ has band gaps of $2.0 \pm 0.1$, $1.1 \pm 0.1$, $0.6 \pm 0.1$ and $0.20 \pm 0.1$ eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the band gap and band edges, suggest an indirect band-gap structure, and elucidate the underlying physics at the atomic level.

cond-mat.mtrl-sci↗

arXiv2019

The Emergence of Unconventional Plasmons Driven by Correlated Electron Interaction in B-site of 2D Hybrid Organic-Inorganic Perovskites

Hybrid organic-inorganic perovskites (HOIPs) have emerged to the forefront of optoelectronic materials advancement in the past few years. Due to the nature of organic compounds within the perovskite structure, its optoelectronic properties are affected by complex interaction and correlation effects between the organic and inorganic ions. Using spectroscopic ellipsometry, we observe two broad plasmonic excitation from the calculated loss function (LF) -Im[\varepislon^{-1} (\omega)], peak A' and B' at 3.28 eV and 4.26 eV, respectively.The presence of these two asymmetric peaks in the spectroscopic ellipsometry (SE) spectra indicates the existence of unconventional plasmons at room temperature. This is inferred due to the absence of the zero-crossing in the real part of dielectric function \varepsilon_1 (\omega). Through combined Near-Edge X-ray Absorption Fine Structure (NEXAFS) and Resonant Photoemission Spectroscopies (ResPES), we observe resonance enhancement peak close to 15 eV in the C K-edge region that unravels a charge transfer event due to the opening of an extra autoionization channel. Additionally, photoluminescence (PL) spectrum confirms the presence of broadband emission originating from the self-trapped emission excitons at 2.38 eV due to the soft 2D-HOIPs crystal structure. We believe that these phenomena directly impact the correlation strength in 2D-HOIPs. Our results have confirmed the existence of unconventional plasmons of 2D-HOIPs at room temperature. Such studies in the emission and plasmonic behavior of perovskites will pave the way for the efficient light emitting devices or lasers with minimal integrations of the materials.

cond-mat.mtrl-sci↗

arXiv2012

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second, we probe the effect of chemical modification in the electronic properties of graphene, grown by chemical vapour deposition on nickel. We find that both the chemisorption of hydrogen and the physisorption of porphyrin molecules strongly depress the conductance at low bias indicating the opening of a bandgap in graphene, paving the way towards the chemical engineering of the electronic properties of graphene.

cond-mat.mes-hall↗

arXiv2012

Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy

The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy band gap of 0.4 eV around the Fermi level. We find that although the plasma treatment modifies the surface topography in a non-reversible way, the change in the electronic properties can be reversed by a moderate thermal annealing and the samples can be hydrogenated again yielding a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.

cond-mat.mes-hall↗