arXiv subjects

B. Hackens

Publications and source records attributed to B. Hackens.

At least 19 recordsLinked to original sources

arXiv2026

Nanoscale resistive switching in electrodeposited MOF Prussian blue analogs driven by K-ion intercalation probed by C-AFM

K-ion intercalation in Prussian blue analogs (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this same ion intercalation process is the basis for nanoscale resistive switching behavior in PBA-base memristive devices. Using C-AFM, we directly visualize and electrically control this intercalation process within sub-100 nm volumes, revealing reversible, localized conductance modulation driven by K-ion intercalation and Fe^(2+)/Fe^(3+) redox reconfiguration. This nanoscale operability highlights the exceptional potential of PBAs for high-scalable and low-dimension memristor-based devices integration. Due to their modular composition, PBAs constitute a chemically rich, earth-abundant materials platform whose electronic and ionic properties can be precisely tuned for specific device functions. K-ion intercalation PBA-based memristor devices, with their single-step, aqueous, and room-temperature fabrication, enable low-cost, large-scale processing compatible with CMOS, without any additional post-fabrication processing. Our findings establish PBAs as a new class of intercalation memristors with scalable nanoscale switching and exceptional materials versatility, toward highly integrated neuromorphic and non-volatile memory technologies. This work provides the first demonstration of intercalation-driven resistive switching under ultrafast voltage sweeps, with PW operating up to 200 V/s and PB up to 50 V/s. This unprecedented speed establishes PBAs as a distinct, high-rate class of K-ion intercalation memristors suitable for fast, high-density neuromorphic and memory applications.

cond-mat.mtrl-sci↗

arXiv2025

Kondo cloud conductance in cavity-coupled quantum dots with asymmetric barriers

The Kondo effect emerges when a localized spin is screened by conduction electrons, giving rise to a strongly-correlated many-body ground state. In this work, we investigate this phenomenon in a GaAs/AlGaAs quantum dot, focusing on the spatial extension of the Kondo screening cloud in the electron reservoirs. To probe its properties, the dot is coupled to an electronic Fabry-P\'erot interferometer, enabling controlled modulation of the density of states at the Fermi level. The observation of Kondo temperature oscillations indicates a Kondo screening length comparable to the cavity size. Furthermore, we explore how the coupling asymmetry with the two reservoirs affects both the amplitude and the phase of the conductance oscillations, revealing a subtle interplay between coherent transport and Kondo effect.

cond-mat.str-el↗

arXiv2025

Taxonomy of defects in semi-dry transferred CVD graphene

Post-transfer in-depth morphological characterization of graphene grown by chemical vapor deposition (CVD) is of great importance to evaluate the quality and to understand the origin of defects of the transferred sheets. Herein, a semi-dry transfer technique is used to peel off millimeter-sized CVD graphene flakes from polycrystalline copper foils and transfer them onto SiO2/Si substrates. We take advantage of the unique feature of this semi-dry process: it preserves the copper substrate, enabling location-specific morphological comparisons between graphene and copper at various stages of the transfer. Thanks to a combination of morphological characterization techniques, this leads to trace and elucidate the origin of various post-transfer graphene defects (cracks, wrinkles, holes, tears). Specifically, thermally induced wrinkles are shown to evolve into nanoscale cracks, while copper surface steps lead to folds. Furthermore, we find that the macroscale topography of the copper foil also plays a critical role in defect formation. This work provides guidelines on how to correctly interpret the post-transfer morphology of graphene films on relevant substrates and how to properly assess their quality. This contributes to the optimization of both the graphene CVD growth and transfer processes for future applications.

cond-mat.mtrl-sci↗

arXiv2023

Identifying and abating copper foil impurities to optimize graphene growth

Copper foil impurities are hampering scalable production of high-quality graphene by chemical vapor deposition (CVD). Here, we conduct a thorough study on the origin of these unavoidable contaminations at the surface of copper after the CVD process. We identify two distinct origins for the impurities. The first type is intrinsic impurities, originating from the manufacturing process of the copper foils, already present at the surface before any high-temperature treatment, or buried into the bulk of copper foils. The buried impurities diffuse towards the copper surface during high-temperature treatment and precipitate. The second source is external: silica contamination arising from the quartz tube that also precipitate on copper. The problem of the extrinsic silica contamination is readily solved upon using an adequate confinement the copper foil samples. The intrinsic impurities are much more difficult to remove since they appear spread in the whole foil. Nevertheless, electropolishing proves particularly efficient in drastically reducing the issue.

cond-mat.mtrl-sci↗

arXiv2021

Quantum Hall nano-interferometer in graphene

Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graphene nano-QHIs, free of localized states (LS). A simple Fabry-Perot model, without Coulomb interaction, reproduces the QHI phenomenology, even in the smallest QHI, highlighting the LS detrimental role.

cond-mat.mes-hall↗

arXiv2021

Revisiting Coulomb diamond signatures in quantum Hall interferometers

Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning gate parameters and the magnetic field, the diamonds are found to smoothly evolve to checkerboard patterns. To explain this surprising behavior, we put forward a model which relies on the presence of a nanometer-sized Fabry-P\'erot quantum Hall interferometer at the center of the constriction with tunable tunneling paths coupling the central part of the interferometer to the quantum Hall channels running along the device edges. Both types of signatures, diamonds and checkerboards, and the observed transition, are reproduced by simply varying the interferometer size and the transmission probabilities at the tunneling paths. The new proposed interpretation of diamond phenomenology will likely lead to revisit previous data, and opens the way towards engineering more complex interferometric devices with nanoscale dimensions.

cond-mat.mes-hall↗

arXiv2020

Accurate characterization of tip-induced potential using electron interferometry

Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) hosted in a semiconductor heterostructure. Scanning the tip in the vicinity of a quantum point contact defined in the 2DEG, we observe Fabry-P\'erot interference fringes at low temperature in maps of the device conductance. We exploit the evolution of these fringes with the tip voltage to measure the change in depletion radius by electron interferometry. We find that a semi-classical finite-element self-consistent model taking into account the conical shape of the tip reaches a faithful correspondence with the experimental data.

cond-mat.mes-hall↗

arXiv2018

2D Rutherford-Like Scattering in Ballistic Nanodevices

Ballistic injection in a nanodevice is a complex process where electrons can either be transmitted or reflected, thereby introducing deviations from the otherwise quantized conductance. In this context, quantum rings (QRs) appear as model geometries: in a semiclassical view, most electrons bounce against the central QR antidot, which strongly reduces injection efficiency. Thanks to an analogy with Rutherford scattering, we show that a local partial depletion of the QR close to the edge of the antidot can counter-intuitively ease ballistic electron injection. On the contrary, local charge accumulation can focus the semi-classical trajectories on the hard-wall potential and strongly enhance reflection back to the lead. Scanning gate experiments on a ballistic QR, and simulations of the conductance of the same device are consistent, and agree to show that the effect is directly proportional to the ratio between the strength of the perturbation and the Fermi energy. Our observation surprisingly fits the simple Rutherford formalism in two-dimensions in the classical limit.

cond-mat.mes-hall↗

arXiv2018

Thermoelectric Scanning Gate Interferometry on a Quantum Point Contact

We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidence large differences between the two signals in the low density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared to SGM, and provides a direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase.

cond-mat.mes-hall↗

arXiv2016

Electron phase shift at the zero-bias anomaly of quantum point contacts

The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts.

cond-mat.mes-hall↗

arXiv2015

The onset, evolution and magnetic braking of vortex lattice instabilities in nanostructured superconducting films

In 1976 Larkin and Ovchinnikov [Sov. Phys. JETP 41, 960 (1976)] predicted that vortex matter in superconductors driven by an electrical current can undergo an abrupt dynamic transition from a flux-flow regime to a more dissipative state at sufficiently high vortex velocities. Typically this transition manifests itself as a large voltage jump at a particular current density, so-called instability current density $J^*$, which is smaller than the depairing current. By tuning the effective pinning strength in Al films, using an artificial periodic pinning array of triangular holes, we show that a unique and well defined instability current density exists if the pinning is strong, whereas a series of multiple voltage transitions appear in the relatively weaker pinning regime. This behavior is consistent with time-dependent Ginzburg-Landau simulations, where the multiple-step transition can be unambiguously attributed to the progressive development of vortex chains and subsequently phase-slip lines. In addition, we explore experimentally the magnetic braking effects, caused by a thick Cu layer deposited on top of the superconductor, on the instabilities and the vortex ratchet effect

cond-mat.supr-con↗

arXiv2015

Multitip scanning gate microscopy for ballistic transport studies in systems with two-dimensional electron gas

We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip potential with a proposal of a few procedures for extraction and manipulation the ballistic transport properties. In particular, we demonstrate that the multi-tip techniques can be used for readout of the Fermi wavelength, detection of potential defects, filtering specific transverse modes, tuning the system into resonant conditions under which a stable map of a local density of states can be extracted from conductance maps using a third tip.

cond-mat.mes-hall↗

arXiv2015

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites of the wires produces conductance oscillations that are periodic in the tip voltage. These oscillations take the shape of concentric circles whose number and diameter increase for more negative tip voltages until full depletion occurs in the probed region. These observations cannot be explained by charging events in material traps, but are consistent with Coulomb blockade in quantum dots forming when the potential fluctuations are raised locally at the Fermi level by the gating action of the tip. This interpretation is supported by simple electrostatic simulations in the case of a disorder potential induced by ionized dopants. This work represents a local investigation of the mechanisms responsible for the disorder-induced metal-to-insulator transition observed in macroscopic two-dimensional electron systems at low enough density.

cond-mat.mes-hall↗

arXiv2014

Classical analogy for the deflection of flux avalanches by a metallic layer

Sudden avalanches of magnetic flux bursting into a superconducting sample undergo deflections of their trajectories when encountering a conductive layer deposited on top of the superconductor. Remarkably, in some cases flux is totally excluded from the area covered by the conductive layer. We present a simple classical model that accounts for this behaviour and considers a magnetic monopole approaching a semi-infinite conductive plane. This model suggests that magnetic braking is an important mechanism responsible for avalanche deflection.

cond-mat.supr-con↗

arXiv2013

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.

cond-mat.mes-hall↗

arXiv2013

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position.

cond-mat.mes-hall↗

arXiv2013

Coherent tunnelling across a quantum point contact in the quantum Hall regime

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling.

cond-mat.mes-hall↗

arXiv2013

Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers. Scanning gate microscopy and scanning gate spectroscopy are used to first localize and then study a single QHI near a quantum point contact. The presence of Coulomb diamonds in the spectroscopy con- firms that Coulomb blockade governs transport across the QHI. Varying the microscope tip bias as well as current bias across the device, we uncover the QHI discrete energy spectrum arising from electronic confinement and we extract estimates of the gradient of the confining potential and of the edge state velocity.

cond-mat.mes-hall↗