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B. Mercey

Publications and source records attributed to B. Mercey.

At least 19 recordsLinked to original sources
arXiv2018

Resonant photoemission with circular polarized light on magnetized LSMO

We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the position of the resonant Raman-Auger photoelectrons from the Mn 2p3p3d decay. These results allow us to achieve a rough estimate of the half-metallic spin half-gap.

cond-mat.mtrl-sci↗
arXiv2014

Structural characterization of PrVO3 epitaxial thin films

Rare earth perovskite oxides constitute a wide family of materials presenting functional proper- ties strongly coupled to their crystalline structure. Here, we report on the experimental results on epitaxial PrVO3 deposited on SrTiO3 single crystal substrates by pulsed laser deposition. By com- bining advanced structural characterization tools, we have observed that the PVO unrelaxed film structure grown on STO, is characterized by two kinds of oriented domains whose epitaxial relations are: (i) PrVO3[110]o//SrTiO3[001]c and PrVO3[001]o//SrTiO3[100]c, (ii) PrVO3[110]o//SrTiO3[001]c and PrVO3[001]o//SrTiO3[010]c. We have also measured reciprocal space maps. From these results, we have determined that the PVO film epitaxy on STO imposes a lowering of the PVO structure symmetry from orthorhombic (Pbnm) to monoclinic (P21/m). We show, the nominal strain induced by the substrate being constant, that the obtained film structure depends on both growth oxygen and temperature. Thus, by finely controlling the deposition conditions, we could tune the strain experienced by PrVO3 thin film. These results show an alternative to substrate mismatch as a path to control the strain and structure of PVO films.

physics.chem-ph↗
arXiv2014

Structural analysis of strained LaVO$_3$ thin films

While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate and, on the other hand, to the intricate epitaxial relationships that substantially complicate standard X-ray diffraction analysis. Using a combined approach, we analyze the crystal structure of epitaxial LaVO$_3$ thin films grown on (100)-oriented SrTiO$_3$. Transmission electron microscopy study reveals that the thin films are epitaxially grown on SrTiO$_3$ and points to the presence of 90$^{\circ}$ oriented domains. The mapping of the reciprocal space obtained by high resolution X-ray diffraction permits refinement of the lattice parameters. We finally deduce that strain accommodation imposes a monoclinic structure onto the LaVO$_3$ film. The reciprocal space maps are numerically processed and the extracted data computed to refine the atomic positions, which are compared to those obtained using precession electron diffraction tomography. We discuss the obtained results and our methodological approach as a promising thin film structure determination for complex systems.

cond-mat.mtrl-sci↗
arXiv2009

Structure determination of a brownmillerite Ca2Co2O5 thin film by Precession Electron Diffraction

Calcium cobaltite thin films with a ratio Ca/Co=1 were grown on (101)-NdGaO3 substrate by the pulsed laser deposition technique. The structure of the deposited metastable phase is solved using a precession electron diffraction 3D dataset recorded from a cross-sectional sample. It is shown that an ordered oxygen-deficient Ca2Co2O5+d perovskite of the brownmillerite-type with lattice parameters a= 0.546nm, b=1.488nm and c=0.546nm (SG: Ibm2) has been stabilized using the substrate induced strain. The structure and microstructure of this metastable cobaltite is further discussed and compared to related bulk materials based on our transmission electron microscopy investigations

cond-mat.mtrl-sci↗
arXiv2008

Mesoscopic electronic heterogeneities in the transport properties of V2O3 thin films

The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film possesses domains that exhibit a metal-to-insulator transition with clear first order features or remain metallic down to low temperatures. A simple model consisting of two parallel resistors can be used to quantify a phase coexistence scenario explaining the measured macroscopic transport properties. The interaction between film and substrate is the most plausible candidate to explain this extended phase coexistence as shown by a correlation between the transport properties and the structural data.

cond-mat.mtrl-sci↗
arXiv2008

Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence

The thermal hysteresis of the electronic transport properties were studied for V2O3 thin films. The temporal evolution of the resistance shows the out-of-equilibrium nature of this hysteresis with a very slow relaxation. Partial cycles reveal not only a behavior consistent with phase coexistence, but also the presence of spinodal temperatures which are largely separated. The temperature spreading of phase coexistence is consistent with the bulk phase diagram in the pressure-temperature plane, confirming that the film is effectively under an effective pressure induced by the substrate.

cond-mat.mtrl-sci↗
arXiv2007

Effect of charge modulation in (LaVO3)m(SrVO3)n superlattices on the insulator-metal transition

A series of epitaxial (LaVO3)6m(SrVO3)m superlattices having the same nominal composition as La6/7Sr1/7VO3, a Mott-Hubbard insulator, were grown with pulsed-laser deposition on [001]-oriented SrTiO3 substrates, and their superlattice period was varied. When m=1, the insulating resistivity of bulk-like La6/7Sr1/7VO3 is obtained; however, an increase in the periodicity (m>=2) results in metallic samples. Comparison of the superlattice periodicity with the coherence length of charge carriers in perovskite oxide heterostructures are used to understand these observations. A filling-controlled insulator-metal transition was induced by placing a single dopant layer of SrVO3 within LaVO3 layers of varying thickness.

cond-mat.mtrl-sci↗
arXiv2007

Thickness-dependence of the electronic properties in V2O3 thin films

High quality vanadium sesquioxide V2O3 films (170-1100 Å) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (ρ) follows the equation ρ=ρ_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 μΩcm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.

cond-mat.str-el↗
arXiv2007

Absence of long-range Ni/Mn ordering in ferromagnetic La2NiMnO6 thin films

Epitaxial La2NiMnO6 thin films have been grown on (001)-oriented SrTiO3 using the PLD technique. The thin films are semiconducting and FM with a TC close to 270K, a coercive field of 920Oe, and a saturation magnetization of 5muB per f.u. TEM, conducted at RT, reveals a majority phase having "I-centered" structure with a=c=1.4asub and b=2asub along with a minority phase-domains having "P-type" structure (asub being the lattice parameter of the perovskite structure). A discusion on the presence of Ni/Mn long-range ordering, in light of recent literature on double perovskites La2NiMnO6 is presented.

cond-mat.mtrl-sci↗
arXiv2006

Domain wall magnetoresistance in a nanopatterned La(2/3)Sr(1/3)MnO3 track

We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA) product of ~2.5 10^(-13) Ohm/m^2 at low temperature and bias, which is several orders of magnitude larger than the values reported for 3d ferromagnets. However, the current-voltage characteristics are highly linear which indicates that the DWs are not phase separated but metallic. The DWRA is found to increase upon increasing the injected current, presumably reflecting some deformation of the wall by spin-transfer. When increasing temperature, the DWRA vanishes at ~225K which is likely related to the temperature dependence of the film anisotropy.

cond-mat.str-el↗
arXiv2006

Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3

V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and others samples exhibit a metallic behavior. For the latter, the XPS analysis indicates an oxidation state of +III for vanadium. There is no metal / insulator transition around 150 K in this sample and a strongly correlated Fermi liquid rho = AT2 behavior of the resistivity at low temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger than the bulk value at 25 kbar.

cond-mat.str-el↗
arXiv2006

Influence of the microstructure on the magnetism of Co-doped ZnO thin films

The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to non-ferromagnetism, leading to a large debate about its origin (secondary phase, Co clusters or not). By carefully studying the micro-structure of various Co-ZnO films, we show that the Co2+ partly substitutes the ZnO wurtzite matrix without forming Co clusters. Surprisingly, the ferromagnetism nature of the films disappears as the Co content increases. In addition, our results suggest that the observed ferromagnetism is likely associated to a large amount of defects- close to the interface and strongly depending on the growth temperature- which may explained the spreading of the results.

cond-mat.mtrl-sci↗
arXiv2005

Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field

Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) properties and colossal magnetoresistance were synthesized by pulsed laser deposition technique on (100)-SrTiO3 and (100)-LaAlO3 substrates. We first compare the structural modifications as function of the substrate and film thickness. Secondly, measuring transport properties in magnetic fields up to 24T, we establish the temperature-field phase diagram describing the stability of the CO state and compare it to bulk material. We show that some structural modification induced by the substrate occurs and that the CO melting magnetic field is greatly reduced. Moreover, with the temperature decrease, no modification of the lattice parameters is observed. We then propose an explanation based on the quenching of the unit cell of the film that adopts the in-plane lattice parameters of the substrate and thus, prevents the complete growth of the CO state at low temperature.

cond-mat.mtrl-sci↗
arXiv2005

The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics

A series of superlattices and trilayers composed of ferromagnetic and ferroelectric or paraelectric layers were grown on (100) SrTiO3 by the pulsed laser deposition technique. Their structural and magneto-electric properties were examined. The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCMO) and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhanced magnetoresistance (MR) at high applied magnetic field, whereas such enhancement was absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstrates the preponderant role of the ferroelectric layers in this enhanced MR. Furthermore, the absence of enhanced MR in trilayers of PCMO/BST indicates that the magneto-electric coupling which is responsible for MR in these systems is stronger in multilayers than in their trilayer counterparts.

cond-mat.mtrl-sci↗
arXiv2004

Interfacial strain measurements in $SrRuO_3/SrMnO_3$ magnetic multilayers

Magnetic multilayers of $(SrRuO_3)_m(SrMnO_3)_n$ were grown artificially using the pulsed laser deposition technique on (001)-oriented $SrTiO_3$ substrates. The state of strain at the interfaces and the structural coherency are studied in details utilizing asymmetrical $X$-ray diffraction and the $\sin ^2\psi $ method. First, the evolution of the lattice parameters, the crystallinity and the epitaxy of the films are evaluated as a function of the number of $SrMnO_3$ unit cells using $X$-rays diffraction and transmission electron microscopy. Second, our results on the stress indicate that the $SrRuO_3/SrMnO_3$ superlattices show a larger residual strain as compared to the single layer film of $SrRuO_3$. This suggests that the lattice stiffening from interfacial strain and inhibiting the dislocation by composition modulation. Finally, these results bring insights on the interfacial stress measurements of oxide multilayers that can be used to control the physical properties at the level of the atomic scale.

cond-mat.str-el↗
arXiv2004

Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study

High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target. We varied the growth conditions such as the deposition temperature and the oxygen pressure. First, using a battery of techniques such as x-rays diffraction, Rutherford Backscattering spectroscopy and atomic force microscopy, we evaluated the structural quality, the stress and the degree of epitaxy of the films. Second, the relations between the deposition conditions and the structural properties, that are directly related to the nature of the thin films, are discussed qualitatively. Finally, a number of issues on how to get good-quality ZnO films are addressed.

cond-mat.mtrl-sci↗
arXiv2004

Structural and magnetic properties of a series of low doped Zn$_{1-x}$Co$_x$O thin films deposited from Zn and Co metal targets on (0001) Al$_2$O$_3$ substrates

We report on the synthesis of low doping Zn$_{1-x}$Co$_x$O ($0<x<0.1$) thin films on (0001)-Al$_2$O$_3$ substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co metallic targets. We first studied the influence of the strains of ZnO and their stuctural properties. Second, we have investigated the structural and the magnetic properties of the Zn$_{1-x}$Co$_x$O films. We show that at low doping, the lattice parameters and the magnetization of the Zn$_{1-x}$Co$_x$O films depend strongly on the Co concentration.

cond-mat.mtrl-sci↗