Search arXiv⌕ Search

arXiv subjects

Byron J. Villis

Publications and source records attributed to Byron J. Villis.

2 recordsLinked to original sources

Long-lived divergence from equilibrium of electrons, nuclear spins and lattice for a solid state ion trap at low temperature

A fundamental problem in physics as well as engineering is equilibration. For example, the regulation of thermal and quantum fluctuations enables thermal and quantum annealing of complex systems. A key question is how different subsystems, such as electrons, nuclear spins and phonons equilibrate on their own as well as with each other. Level crossings play a special role in the dynamics of coupled degrees of freedom, for it is here that entanglement can be maximized to speed up relaxation. Here we use optical methods to establish the electronuclear level scheme, including avoided and unavoided crossings, and to examine equilibration of a rare earth ion (Ho$^{3+}$) in a salt (LiYF$_4$), a model system with quantum fluctuations which can be tuned via an external magnetic field transverse to the crystallographic long axis of the tetragonal host. We track the state of the system by monitoring the populations of the levels as a function of swept longitudinal fields, and discover that at low temperatures, depending on the experimental protocol, vastly different non-equilibrium states arise. We find evidence that nuclear spin excitations diffuse and equilibrate without the assistance of phonons, and tend to acquire higher effective temperatures than the electronic spins and the yet cooler lattice. A theory of thermally assisted tunneling rules out the standard scenario of phonon -assisted tunneling, and instead suggests that fast dynamics at level anti-crossings are facilitated entirely by nuclear spin diffusion. This provides a new understanding of thermalization and related slow relaxation phenomena in dense, multi-component interacting quantum systems.

cond-mat.mes-hall↗

2D-3D crossover in a dense electron liquid in silicon

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

cond-mat.mes-hall↗