arXiv subjects

Da-Peng Yu

Publications and source records attributed to Da-Peng Yu.

11 recordsLinked to original sources

arXiv2025

Current-induced magnetoresistance hysteresis in the kagome superconductor CsV$_3$Sb$_5$

We report the observation of current-modulated magnetoresistance hysteresis below the superconducting transition temperature in the kagome superconductor CsV$_3$Sb$_5$. This highly tunable hysteresis behavior is confined to the superconducting state and vanishes when superconductivity is fully suppressed, directly linking magnetoresistance hysteresis to the superconducting order in CsV$_3$Sb$_5$. Additionally, the superconducting diode effect driven by a small magnetic field is observed, indicating the enhanced electronic magnetochiral anisotropy by the chiral domain-wall scattering. Our findings position CsV$_3$Sb$_5$ as a promising platform for exploring nontrivial physical phenomena, including unconventional pairing mechanisms and topological superconductivity.

cond-mat.supr-con↗

arXiv2024

Resistive anisotropy in the charge density wave phase of Kagome superconductor CsV3Sb5 thin films

We investigate the resistive anisotropy in CsV3Sb5 thin films within the charge density wave phase. Using a device structure with twelve electrodes symmetrically distributed in a circular shape, we measure the resistivity anisotropy by varying the current direction. A twofold resistivity anisotropy modulated by temperature is found, which is fully consistent with the electronic nematicity in CsV3Sb5, that is, the spontaneous rotational symmetry breaking by electronic degree of freedom. Additionally, the resistivity anisotropy also shows modest changes by applying magnetic fields, implying the possible chiral charge orders with time-reversal symmetry breaking. These findings provide deep insights into the correlated electronic states in Kagome materials and highlight the unique properties of CsV3Sb5 in the two-dimensional regime.

cond-mat.supr-con↗

arXiv2023

Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film

In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If superconductivity also sets in, the charge transmission may become dissipationless in one direction while remaining dissipative in the opposite, thereby realizing a superconducting diode. Through both direct-current and alternating-current measurements, we study the nonreciprocal effects in thin films of the noncentrosymmetric superconductor T$_d$-MoTe\textsubscript{2} with disorders. We observe nonreciprocal superconducting critical currents with a diode efficiency close to 20\%~, and a large magnetochiral anisotropy coefficient up to $\SI{5.9e8}{\per\tesla\per\ampere}$, under weak out-of-plane magnetic field in the millitesla range. The great enhancement of rectification efficiency under out-of-plane magnetic field is likely abscribed to the vortex ratchet effect, which naturally appears in the noncentrosymmetric superconductor with disorders. Intriguingly, unlike the finding in Rashba systems, the strongest in-plane nonreciprocal effect does not occur when the field is perpendicular to the current flow direction. We develop a phenomenological theory to demonstrate that this peculiar behavior can be attributed to the asymmetric structure of spin-orbit coupling in T$_d$-MoTe\textsubscript{2}. Our study highlights how the crystallographic symmetry critically impacts the nonreciprocal transport, and would further advance the research for designing the superconducting diode with the best performance.

cond-mat.supr-con↗

arXiv2022

Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4

We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior, indicating the existence of interfacial potential barriers within the heterostructure. Under an out of plane perpendicular magnetic field, a transition from negative to positive magnetoresistance (MR) is found when increasing the bias voltage. A proximity-induced superconducting gap is estimated to be 0.1meV by a pair of differential resistance dips. Moreover, the induced gap is enhanced by gradually tuning the Fermi level toward the charge neutral point by a back gate voltage, which is ascribed to the increased transport contribution of the topological surface states in MBT. Intriguingly, the induced gap exhibits an anomalous magnetic field assisted enhancement, which may originate from the spin orbit coupling and magnetic order of MBT. Our results reveal the interplay between magnetism and superconductivity in MBT, paving the way for further studies on topological superconductivity and chiral Majorana edge modes in quantum anomalous Hall insulator/superconductor hybrid systems.

cond-mat.mtrl-sci↗

arXiv2020

Topological Semimetal Nanostructures: From Properties to Topotronics

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.

cond-mat.mes-hall↗

arXiv2020

Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in electronic transport, allowing to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd3As2-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding the higher-order topological phase in a 3D Dirac semimetal.

cond-mat.mtrl-sci↗

arXiv2018

Bulk and surface states carried supercurrent in ballistic Nb-Dirac semimetal Cd3As2 nanowire-Nb junctions

A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking time-reversal symmetry. However, the highly conductive bulk state usually hides the electronic transport from the surface state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk and surface states in Nb-Cd3As2 nanowire-Nb short and long junctions, respectively. For the 1 micrometer long junction, the Fabry-Perot interferences induced oscillations of the critical supercurrent are observed, suggesting the ballistic transport of the surface states carried supercurrent, where the bulk states are decoherent and the topologically protected surface states still keep coherent. Moreover, a superconducting dome is observed in the long junction, which is attributed to the enhanced dephasing from the interaction between surface and bulk states as tuning gate voltage to increase the carrier density. The superconductivity of topological semimetal nanowire is promising for braiding of Majorana fermions toward topological quantum computing.

cond-mat.mes-hall↗

arXiv2017

Topological transport in Dirac electronic systems: A concise review

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological orders. In this topical review, transport properties of topological insulator (Bi2Se3), topological Dirac semimetal (Cd3As2) and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems, including topological edge transport, topological valley transport and topological Weyl semimetals, are provided.

cond-mat.mtrl-sci↗

arXiv2016

Ultrafast Broadband Photodetectors based on Three-dimensional Dirac Semimetal Cd3As2

The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted as driven by its wide range of optoelectronic and photonic applications such as optical communications, interconnects, imaging and remote sensing1. 2D Dirac semimetal graphene has shown excellent potential toward high performance photodetector with high operation speed, broadband response and efficient carrier multiplications benefiting from its linear dispersion band structure with high carrier mobility and zero bandgap2-4. As the three dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as bulk material and thus enhanced responsivity5,6, which promises great potential in improving the performance of photodetector in various aspects . In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with response time of about 6.9 ps without any special device optimization. Broadband responses from 0.8 eV to 2.34 eV are measured with potential detection range extendable to far infrared and terahertz. Systematical studies indicate that the photo-thermoelectric effect plays important roles in photocurrent generation, similar to that in graphene. Our results suggest this emerging class of exotic quantum materials can be harnessed for photo detection with high sensitivity and high speed (~145 GHz) in challenging middle/far-infrared and THz range.

cond-mat.mes-hall↗

arXiv2015

Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires

Three-dimensional Dirac semimetals, a three-dimensional analogue of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fermions by breaking time reversal or inversion symmetry. Topological surface states with Fermi arcs are predicted on the surface and have been observed by angle-resolved photoemission spectroscopy experiments. Although the exotic transport properties of the bulk Dirac cones have been demonstrated, it is still a challenge to reveal the surface states via transport measurements due to the highly conductive bulk states. Here, we show Aharonov-Bohm oscillations in individual single-crystal Cd3As2 nanowires with low carrier concentration and large surface-to-volume ratio, providing transport evidence of the surface state in three-dimensional Dirac semimetals. Moreover, the quantum transport can be modulated by tuning the Fermi level using a gate voltage, enabling a deeper understanding of rich physics residing in Dirac semimetals.

cond-mat.mes-hall↗

arXiv2015

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into Weyl semimetal with exotic chiral anomaly effect, while the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we report the magneto-transport properties of individual Cd3As2 nanowires. Large negative magnetoresistance (MR) with magnitude of -63% at 60 K and -11% at 300 K are observed when the magnetic field is parallel with the electric field direction, giving the evidence of the chiral magnetic effect in Cd3As2 nanowires. In addition, the critical magnetic field BC, where there is an extremum of the negative MR, increases with increasing temperature. As the first observation of chiral anomaly induced negative MR in Cd3As2 nanowires, it may offer valuable insights for low dimensional physics in Dirac semimetals.

cond-mat.mes-hall↗