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Daniel Higginbottom

Publications and source records attributed to Daniel Higginbottom.

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Optically Resolved Excited State Hyperfine Structure of a Silicon Colour Centre in the Telecom Bands

Nuclear spin qubits in silicon offer exceptionally coherent quantum memory, and optically-interfaced spins are a promising platform for both quantum networking and distributed quantum computing. It has been proposed that emitters with diamagnetic ground states may permit an optical interface to nuclear spin memories via metastable, hyperfine-coupled excited states while suppressing key sources of decoherence. Until now, direct optical observation of suitable transitions in silicon colour centres has remained elusive. Here we characterize the singly-ionized interstitial aluminum donor (Al$_\mathrm{i}^+$) in isotopically purified $^{28}$Si and find several novel features of this little-studied defect. We measure bright emission and strong optical transitions and, in contrast to previous studies of this centre, attribute its emission to an exchange-split spin triplet and singlet level of the lowest-energy 1s:T$_2$ excited state. We measure the excited-state lifetimes and, as a consequence of its narrow emission linewidth, observe the fine and hyperfine structure of the long-lived triplet state. This constitutes the first measurement of an optically-resolved hyperfine structure in the excited state of a telecommunications-band silicon colour centre.

quant-ph

Silicon T centre hyperfine structure and memory protection schemes

Combining the long-coherence of spin qubits and the capability to transmit information and entanglement through photons, spin-photon interfaces (SPIs) are a promising platform for networked quantum computation and long-distance quantum communication. SPIs that possess local `memory' qubits in addition to the optically coupled `communication' qubit can improve remote entanglement fidelities through brokered entanglement schemes and entanglement purification. In these schemes, it is critical to protect the memory qubit from decoherence during entanglement operations on the communications qubit. Silicon, a platform with mature microelectronic and nanophotonic fabrication, is host to the T centre, an SPI with emission in the telecommunications O-band that directly integrates with silicon nanophotonics. Cavity-coupled T centres are a platform for brokered entanglement distribution in silicon photonic circuits and over long-distance optical fibre links. The T centre's electron and nuclear spin qubits are an intrinsic register of communication and memory qubits respectively, with anisotropic hyperfine coupling. In this work we determine the T centre's hydrogen hyperfine coupling tensor. We also introduce schemes to protect against dephasing or eliminate relaxation of the T centre's hydrogen memory qubit during optical excitation. These results address a key challenge for practical T centre quantum networks.

quant-ph

Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon

T center defects in silicon provide an attractive platform for quantum technologies due to their unique spin properties and compatibility with mature silicon technologies. We investigate several gate protocols between single T centers, including two probabilistic photon interference-based schemes, a near-deterministic photon scattering gate, and a deterministic magnetic dipole-based scheme. In particular, we study a photon interference-based scheme with feedback which can achieve success probabilities above 50%, and use the photon-count decomposition method to perform the first analytical calculations of its entanglement fidelity and efficiency while accounting for imperfections. We also calculate the fidelity and efficiency of the other schemes. Finally, we compare the performance of all the schemes, considering current and near-future experimental capabilities. In particular, we find that the photon interference-based scheme with feedback has the potential to achieve competitive efficiency and fidelity, making it interesting to explore experimentally.

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Distributed Quantum Computing in Silicon

Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors consume remote entanglement distributed between modules to realize distributed quantum logic. Networked quantum computers will therefore require the capability to rapidly distribute high fidelity entanglement between modules. Here we present preliminary demonstrations of some key distributed quantum computing protocols on silicon T centres in isotopically-enriched silicon. We demonstrate the distribution of entanglement between modules and consume it to apply a teleported gate sequence, establishing a proof-of-concept for T centres as a distributed quantum computing and networking platform.

quant-ph

Optical transition parameters of the silicon T centre

The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

quant-ph

High-efficiency single photon emission from a silicon T-center in a nanobeam

Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state that has long coherence times. But this color center exhibits a long excited state lifetime which results in a low photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to collect over 70% of the T center emission directly into a single mode fiber. This efficiency enables us to directly demonstrate single photon emission from the zero phonon line, which represents the coherent emission from the T center. Our results represent an important step towards silicon-integrated spin-photon interfaces for quantum computing and quantum networks.

quant-ph