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Daniel Slone

Publications and source records attributed to Daniel Slone.

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Tripling of the Superconducting Critical Current Density in BaFe$_2$(As$_{1-x}$P$_x$)$_2$ Retained After Pressure Release

Superconducting performance is tunable not only via chemical modification or defect engineering, but also through external parameters such as pressure, though this method remains less readily accessible. In this work, we study how compression influences vortex dynamics and critical currents in an iron-based superconductor. Specifically, we perform magnetization measurements using an off-the-shelf pressure cell to investigate the effects of hydrostatic pressures up to 1.08 GPa on the magnetic properties of BaFe$_2$(As$_{0.62}$P$_{0.38}$)$_2$ crystals across a range of temperatures $T$ and magnetic fields $H$. Although these pressures minimally affect the superconducting critical temperature, they produce a clear increase in the critical current density $J_c(T,H)$, a pronounced reduction in the rate of thermally activated vortex motion $S(T,H)$, and can change the dominant vortex pinning mechanism. Furthermore, the effects of pressure are irreversible: after pressurization and subsequent release at room temperature, high-density microcracks are observed and the crystals retain their enhanced critical current densities. The second magnetization peak vanishes above 18 K after the pressure cycle, which we attribute to a transition from predominantly $\delta \kappa$ pinning to a mixed mechanism of $\delta T_c$ and surface pinning. Lastly, a threefold increase in $J_c$, a more than 40\% reduction in $S$ at 8~K and 0.5~T, and an expanded elastic-creep region were achieved after $1-2$ pressure cycles. These findings demonstrate the potential utility of pressure cycling for improving $J_c$, which may offer a simpler alternative compared to approaches such as chemical doping or the introduction of artificial pinning centers.

cond-mat.supr-con

Extraction of Secrets from 40nm CMOS Gate Dielectric Breakdown Antifuses by FIB Passive Voltage Contrast

CMOS one-time-programmable (OTP) memories based on antifuses are widely used for storing small amounts of data (such as serial numbers, keys, and factory trimming) in integrated circuits due to their low cost, requiring no additional mask steps to fabricate. Device manufacturers and IP vendors have claimed for years that antifuses are a ``high security" memory which is significantly more difficult for an attacker to extract data from than other types of memory, such as Flash or mask ROM - however, as our results show, this is untrue. In this paper, we demonstrate that data bits stored in a widely used antifuse block can be extracted by a semiconductor failure analysis technique known as passive voltage contrast (PVC) using a focused ion beam (FIB). The simple form of the attack demonstrated here recovers the bitwise OR of two physically adjacent memory rows sharing common metal 1 contacts, however we have identified several potential mechanisms by which it may be possible to read the even and odd rows separately. We demonstrate the attack on a commodity microcontroller made on the 40nm node and show how it can be used to extract significant quantities of sensitive data, such as keys for firmware encryption, in time scales which are very practical for real world exploitation (1 day of sample prep plus a few hours of FIB time) with only a single target device required after initial reconnaissance has been completed on blank devices.

cs.CR