arXiv subjects

F. Pan

Publications and source records attributed to F. Pan.

13 recordsLinked to original sources

arXiv2020

Current-induced magnetization switching in CoTb amorphous single layer

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.

cond-mat.mtrl-sci↗

arXiv2019

Exact isovector pairing in a shell-model framework: Role of proton-neutron correlations in isobaric analog states

We utilize a nuclear shell model Hamiltonian with only two adjustable parameters to generate, for the first time, exact solutions for pairing correlations for light to medium-mass nuclei, including the challenging proton-neutron pairs, while also identifying the primary physics involved. In addition to single-particle energy and Coulomb potential terms, the shell model Hamiltonian consists of an isovector $T=1$ pairing interaction and an average proton-neutron isoscalar $T=0$ interaction, where the $T=0$ term describes the average interaction between non-paired protons and neutrons. This Hamiltonian is exactly solvable, where, utilizing 3 to 7 single-particle energy levels, we reproduce experimental data for 0$^+$ state energies for isotopes with mass $A=10$ through $A=62$ exceptionally well including isotopes from He to Ge. Additionally, we isolate effects due to like-particle and proton-neutron pairing, provide estimates for the total and proton-neutron pairing gaps, and reproduce $N$ (neutron) = $Z$ (proton) irregularity. These results provide a further understanding for the key role of proton-neutron pairing correlations in nuclei, which is especially important for waiting-point nuclei on the rp-path of nucleosynthesis.

nucl-th↗

arXiv2018

Spin-orbit torque in completely compensated synthetic antiferromagnet

Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orbit coupling at bottom Pt/[Co/Pd] interface compared to its upper counterpart without Pt. Both experimental and theoretical analyses unravel that the torque efficiency of antiferromagnetic coupled stacks is significantly higher than the ferromagnetic counterpart, making the critical switching current of SAF comparable to the conventional single ferromagnet. Besides adding an important dimension to spin-orbit torque, the efficient switching of completely compensated SAF might advance magnetic memory devices with high density, high speed and low power consumption.

cond-mat.mtrl-sci↗

arXiv2018

Strong orientation dependent spin-orbit torque in antiferromagnet Mn2Au

Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for N\'eel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current induced antiferromagnetic moment switching in all the prepared Mn2Au films by a short current pulse at room temperature, whereas different orientated films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but becomes attenuated seriously during initially switching circles when the current is applied along hard axis, because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation dependent SOT switching, which was not realized irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.

cond-mat.mtrl-sci↗

arXiv2018

Antidamping torque-induced switching in biaxial antiferromagnetic insulators

We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 10^7 A/cm^2. The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Neel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn2Au and CuMnAs, where field-like torques induced by the Edelstein effect drive the Neel switching, therefore resulting in an orthogonal alignment between the Neel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2017

Electric-field control of oxygen vacancy and magnetic phase transition in cobaltite/manganite bilayer

Manipulation of oxygen vacancies (V_O) in single oxide layers by varying the electric field can result in significant modulation of the ground state. However, in many oxide multilayers with strong application potentials, e.g. ferroelectric tunnel junctions and solid-oxide fuel cells, understanding V_O behaviour in various layers under an applied electric field remains a challenge, owing to complex V_O transport between different layers. By sweeping the external voltage, a reversible manipulation of V_O and a corresponding fixed magnetic phase transition sequence in cobaltite/manganite (SrCoO3-x/La0.45Sr0.55MnO3-y) heterostructures are reported. The magnetic phase transition sequence confirms that the priority of electric-field-induced V_O formation/annihilation in the complex bilayer system is mainly determined by the V_O formation energies and Gibbs free energy differences, which is supported by theoretical analysis. We not only realize a reversible manipulation of the magnetic phase transition in an oxide bilayer, but also provide insight into the electric field control of V_O engineering in heterostructures.

physics.app-ph↗

arXiv2017

Tunneling anisotropic magnetoresistance driven by magnetic phase transition

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in alfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one alfa-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the alfa-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.

cond-mat.mtrl-sci↗

arXiv2017

Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling

Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferromagnetic coupling. It is found that the magnetization of two CoFeB layers can be switched between two antiparallel states simultaneously. This observation is replicated by the theoretical calculations by solving Stoner-Wohlfarth model and Landau-Lifshitz-Gilbert equation. Our findings combine spin-orbit torque and interlayer coupling, which might advance the magnetic memories with low stray field and low power consumption.

cond-mat.mtrl-sci↗

arXiv2017

Metal-insulator-metal transition in NdNiO3 films capped by CoFe2O4

Metal-insulator transition features as a transformation, from a highly charge conductive state to another state where charge conductivity is greatly suppressed when decreasing the temperature. Here we demonstrate two consecutive transitions in NdNiO3 films with CoFe2O4 capping, in which the metal-insulator transition occurs at 85 K, followed by an unprecedented insulator-metal transition below 40 K. The emerging insulator-metal transition associated with a weak antiferromagnetic behavior is observed in 20 unit cell-thick NdNiO3 with more than 5 unit cell CoFe2O4 capping. Differently, the NdNiO3 films with thinner CoFe2O4 capping only exhibit metal-insulator transition at 85 K, accompanied by a strong antiferromagnetic state below 40 K. Charge transfer from Co to Ni, instead of from Fe to Ni, formulates the ferromagnetic interaction between Ni-Ni and Ni-Co atoms, thus suppressing the antiferromagnetic feature and producing metallic conductive behavior. Furthermore, a phase diagram for the metal-insulator-metal transition in this system is drawn.

cond-mat.str-el↗

arXiv2017

Lateral transport properties of thermally excited magnons in yttrium iron garnet films

Spin information carried by magnons is attractive for computing technology and the development of magnon-based computing circuits is of great interest. However, magnon transport in insulators has been challenging, different from the clear physical picture for spin transport in conductors. Here we investigate the lateral transport properties of thermally excited magnons in yttrium iron garnet (YIG), a model magnetic insulator. Polarity reversals of detected spins in non-local geometry devices have been experimentally observed and are strongly dependent on temperature, YIG film thickness, and injector-detector separation distance. A competing two-channel transport model for thermally excited magnons is proposed, which is qualitatively consistent with the spin signal behavior. In addition to the fundamental significance for thermal magnon transport, our work furthers the development of magnonics by creating an easily accessible magnon source with controllable transport

cond-mat.mtrl-sci↗

arXiv2016

Tripartite Bell-type inequalities for measures of quantum coherence and skew information

We construct the tripartite Bell-type inequalities of product states for l1-norm of coherence, relative entropy of coherence and skew information. Some three-qubit entangled states violate these inequalities. Particulary, the tripartite Bell-type inequality for relative entropy of coherence is always violated by the W class pure or mixed states as well as the GHZ class pure or mixed states, being used as entanglement witness.

quant-ph↗

arXiv2016

The complementarity relations of quantum coherence in quantum information processing

We establish two complementarity relations for the relative entropy of coherence in quantum information processing, i.e., quantum dense coding and teleportation. We first give an uncertaintylike expression relating local quantum coherence to the capacity of optimal dense coding for bipartite system. The relation can also be applied to the case of dense coding by using unital memoryless noisy quantum channels. Further, the relation between local quantum coherence and teleportation fidelity for two-qubit system is given.

quant-ph↗

arXiv2010

Challenges for Modeling Nuclear Structure: Are the Proton and Neutron Masses and A-body Interactions Relevant?

We discuss some of the challenges that future nuclear modeling may face in order to improve the description of the nuclear structure. One challenge is related to the need for A-body nuclear interactions justified by various contemporary nuclear physics studies. Another challenge is related to the discrepancy in the NNN contact interaction parameters for 3He and 3H that suggests the need for accurate proton and neutron masses in the future precision calculations. MSC2010 Classification: 17B81 Applications to physics, 17B80 Applications to integrable systems, 81R12 Relations with integrable systems, 81V70 Many-body theory, 81V35 Nuclear physics, 81U15 Exactly and quasi-solvable systems, 82B23 Exactly solvable models; Bethe ansatz.

nucl-th↗