arXiv subjects

Fengqi Song

Publications and source records attributed to Fengqi Song.

At least 19 recordsLinked to original sources

arXiv2026

Electrically tunable superconducting dimensionality in stripe-ordered monolayer MoTe$_2$

Dimensionality governs the stability of collective quantum states, including whether Cooper pairs can establish the phase coherence required for superconductivity. In solids, however, electronic dimensionality is usually encoded in the crystal structure and is difficult to control reversibly. Here we show evidence that monolayer 1$T^{\prime}$-MoTe$_2$ develops a stripe charge-density wave that reorganizes its low-energy electronic states into quasi-one-dimensional channels. Raman spectroscopy and scanning tunneling microscopy identify the stripe order, whereas directional transport and tunneling spectroscopy reveal superconducting correlations confined to the stripe direction and insulating behavior perpendicular to it. Electrostatic doping weakens the transverse insulating response and drives the system into phase-coherent two-dimensional superconductivity. These results show that stripe charge order can reconfigure superconducting dimensionality and make it electrically tunable within a single crystalline layer.

cond-mat.supr-con↗

arXiv2026

On the origin of nonreciprocal charge transport in topological insulator BiSbTeSe2

Nonreciprocal charge transport provides an effective approach for probing direction dependent charge dynamics and spin-momentum-locked electronic states. Here, we report highly gate-tunable nonreciprocal charge transport in dual-gated BiSbTeSe2 topological insulator device. The second-harmonic longitudinal resistance is linear in both current and magnetic field. The nonreciprocal response reaches its maximum near the charge neutrality point, exhibits sign reversals on either side, and is strongly suppressed once the Fermi level enters the bulk states. We suggest that the nonreciprocal response is attributed to the inhomogeneity of spin-momentum locking in the topological surface states. The nonreciprocal signal near the charge neutrality point is about one order of magnitude larger than that without gate modulation and remains robust up to 300 K, highlighting BiSbTeSe2 as a promising platform for room-temperature nonlinear electronics.

cond-mat.mes-hall↗

arXiv2026

Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi2Te4 Devices with Engineered Geometric Defects

Chiral edge states in Chern insulators are theoretically predicted to propagate unidirectionally along the sample boundary with inherent robustness against local perturbations, which manifests as the immunity to impurity-induced backscattering, a key factor for the development of robust, high-performance quantum devices. However, the direct experimental verification of the robustness of chiral edge states remains scarce. Here, we experimentally validate the robustness of the chiral edge states in MnBi2Te4 devices by introducing engineered geometric defects via atomic force microscopy (AFM) nanomachining. Specifically, under a moderate perpendicular magnetic field, the MnBi2Te4 devices exhibit the Chern insulator state, characterized by a quantized Hall plateau and simultaneously vanishing longitudinal resistance. To verify the robustness of this topological state, we modify the device geometry by creating a structural cut that reaches the substrate using AFM nanomachining. Remarkably, the quantization behavior survives this drastic modification. The robust nature of the chiral edge transport is further confirmed by two-terminal, three-terminal, and nonlocal measurements, demonstrating that the edge currents can survive the engineered cut. Our results provide strong evidence for the robustness of chiral edge states against geometric disruption and establish AFM nanomachining as a promising technique for topological quantum devices engineering.

cond-mat.mes-hall↗

arXiv2026

Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2

The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate-tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.

cond-mat.mes-hall↗

arXiv2026

Probing the anomalous symmetry-breaking in kagome material CsV3Sb5 via third-order nonlinearity

The kagome material has rapidly established itself as a research frontier in condensed matter physics, owing to its distinctive geometric structure and the rich array of unconventional physical phenomena. In the kagome AV3Sb5 (A = K, Rb, Cs) family, the charge-ordered state exhibits a remarkable characteristic, i.e., anomalous symmetry-breaking, which is tied to the topological nature of the electronic band structure. Here, we report the third-order nonlinear longitudinal and Hall responses that persist stably up to room temperature in the kagome material CsV3Sb5. Notably, the nonlinear responses demonstrate significant enhancement below the charge density wave (~ 77 K) order and anomalous symmetry-breaking (~ 39 K) state. The scaling analysis indicates that the third-order nonlinear transport is governed jointly by quantum geometric contribution and extrinsic scattering. This study realizes a giant third-order nonlinear response and provides a distinct method to detect anomalous symmetry-breaking in CsV3Sb5.

cond-mat.str-el↗

arXiv2026

Gap reopening as a possible signature of coupling between Majorana zero modes in Sn-(Bi,Sb)2(Te,S)3-based Josephson trijunctions

In the past two decades, enormous efforts have been made to search for possible platforms and schemes to implement topological quantum computation (TQC). In exploring the Fu-Kane scheme of TQC based on Josephson trijunctions constructed on topological insulators, the predicted Majorana phase diagram of an individual trijunction has already been verified experimentally. If Majorana zero modes indeed exist in this kind of trijunction, coupling between them in multiple trijunction devices should be further expected. In this study, we fabricated Josephson devices containing two adjacent Josephson trijunctions on the surface of Sn-(Bi, Sb)2(Te, S)3 and observed a possible signature of the coupling effect manifesting as the reopening of a minigap in both trijunctions where a closure would otherwise be expected if the trijunctions existed individually. While alternative interpretations cannot be fully ruled out, our findings provide experimental support for the validity of the Fu-Kane theory and provide further motivation for advancing the TQC scheme proposed by Fu and Kane.

cond-mat.supr-con↗

arXiv2026

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the Néel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

cond-mat.mes-hall↗

arXiv2026

Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2

Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized by its dipole and multipole moments, which can induce the nonlinear anomalous Hall effect (NLAHE). To date, the NLAHE has been demonstrated in various materials, yet reports on room-temperature NLAHE are still limited. In this work, we report the observation of the third-order NLAHE in ferromagnetic metal Fe3GaTe2. The third-order NLAHE shows hysteretic behavior with the variation of magnetic field, where the coercive field is the same as that of the anomalous Hall effect, and the third-order NLAHE remains observable up to the Curie temperature (~350 K). The scaling analysis suggests that the third-order NLAHE may be attributed to the Berry curvature quadrupole. Our work not only provides an approach to study magnetic materials through nonlinear electric transports, but also opens up possibilities for the future development of room-temperature third-order nonlinear electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

A Sc2C2@C88 cluster based ultra-compact multi-level probabilistic bit for matrix multiplication

Information units are progressively approaching the fundamental physical limits of the integration density, including in terms of extremely small sizes, multistates and probabilistic traversal. However, simultaneously encompassing all of these characteristics in a unit remains elusive. Here, via real-time in situ electrical monitoring, we clearly observed stochastic alterations of multiple conductance states in Sc2C2@C88. The true random bit sequence generated exhibited an autocorrelation function whose confidence interval fell within \pm 0.02, demonstrating high-quality randomness. The alterations of multiple conductance states are controllable, that is, whose probability distributions could traverse from 0 to 1, enabling us to factorize 551 into its prime factors. Furthermore, we proposed a matrix-chain multiplication scheme and experimentally verified the multiplication of two 4 \times 4 state-transition matrices with a small maximum error < 0.05. Combined with theoretical calculations, the stochastic but controllable multistates are probably attributed to the rich energy landscape, which could be stepwise changed by the electric field. Our findings reveal extremely small multi-level probabilistic bit for matrix multiplication, which pave the way for ultracompact intelligent electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Exchange operation of Majorana zero modes in topological insulator-based Josephson trijunctions

Majorana zero modes are anyons obeying non-Abelian exchange statistics distinct from fermions or bosons. While significant progresses have been achieved in the past two decades in searching for these exotic excitations in solid-state systems, their non-Abelian nature remains unverified, as definitive proof requires braiding operations. Here, we report preliminarily experimental advances in creating, manipulating, and exchanging the presumed Majorana zero modes in an envelope-shaped Josephson device composed of multiple trijunctions on a topological insulator surface. We observed the signatures of in-gap states migration consistent with the expectations of the Fu-Kane model, supporting the realization of an exchange operation. This work would establish a critical pathway toward ultimately braiding Majorana zero modes in the Fu-Kane scheme of topological quantum computation.

cond-mat.mes-hall↗

arXiv2025

Field-free superconducting diode effect of NbSe2 induced by strain

Superconducting diodes, similar to semiconductor diodes, possess unidirectional superconducting properties and are the fundamental units for constructing superconducting quantum computing, thus attracting widespread attention. At present, most of superconducting diodes require an external magnetic field or proximity effect to break time reversal symmetry (TRS). The cases of intrinsic superconducting diode effect (SDE) under zero magnetic field are relatively scarce, and there are still some puzzles especially regarding the reasons for the TRS breaking. Here, we not only report field free SDE in NbSe2 induced by strain, but also large values of the difference of Ic+ and |Ic-| (ΔIc) of 286 μA and the superconducting diode efficiency (η) of 6.76 % are achieved. Interestingly, ΔIc varies with the magnetic field and exhibits two distinct evolutionary behaviors with B-odd or B-even symmetry in various devices. We attribute this to the selective activation of two independent, spatially-orthogonal mechanisms: a stress-induced real-space polarity and a field-induced reciprocal-space asymmetric energy bands. In general, we propose an extremely effectively method to produce field free SDE, even when the material itself does not possess field free SDE, and provide new perspectives to understand the SDE which build new avenues for superconducting quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Understanding the atomically precise evolution of the miscibility of newly prepared face-centered cubic W-Cu nanoalloys and its asymmetry

According to classical Miedema theory, reducing crystals to the order of nanometer sizes might greatly modulate the mixing enthalpy of elements, thus enabling the invention of a lot of new bulk-immiscible alloys. Although numerous alloys with higher mixing enthalpies remain unexplored, this strategy is approaching its limit, as reflected by the critical diameter of recent alloys of 1.8 nm, which corresponds to ~150 atoms and hardly provides a crystalline order. Future development requires not only even smaller atomic-scale control but also a new surface energy-saving mechanism. Here, we report the formation of W-Cu nanoalloys with a very large miscibility gap in the bulk via the use of an atomically size-selected cluster beam source as an example. The face-centered cubic (FCC) structure was demonstrated through electron diffraction, which indicated a lattice constant of 3.88Å for W0.85Cu0.15 nanoalloys (~2280 atoms). In this comprehensive study that covers a large parameter space of W/Cu compositions and numbers of atoms, an asymmetric miscibility nanophase diagram in which W-rich compositions favor mixing and the critical size is approximately 6000 atoms, which far exceeds the approximately tens of atoms predicted via classical theory, was obtained for the first time. Density functional theory (DFT) calculations revealed a mutual strain-induced mechanism that simultaneously lowers the surface energies while reducing the size to the atomic scale. This approach paves the way for the development of new high-performance nonequilibrium phase alloys.

cond-mat.mtrl-sci↗

arXiv2025

Negative differential conductance in triangular molecular assemblies

We report the creation and characterization of a molecular-scale negative differential conductance (NDC) device by assembling a triangular trimer of 4,5,9,10-tetrabromo-1,3,6,8-tetraazapyrene (TBTAP) molecules on a superconducting Pb(111) substrate. Using low-temperature scanning tunneling spectroscopy, we observe robust NDC behavior manifesting as a decrease in current with increasing voltage between 0.7-0.9 V arising from the interplay of Coulomb blockade and strong inter-molecular capacitive coupling within the molecular cluster. Gate-controlled charging and discharging processes are directly visualized via two-dimensional differential conductance mapping, which reveals the emergence of Coulomb rings and spatial regions of NDC. Theoretical modeling using a three-impurity Anderson model and master equation approach quantitatively reproduces the experimental observations and demonstrates that the NDC emerges purely from electron correlations, independent of the underlying superconductivity. By tuning the geometry to a hexamer structure, we further show that cluster topology provides versatile control over electronic properties at the molecular scale. These results establish a functional platform for implementing multifunctional molecular devices and highlight a strategy toward programmable and scalable nanoelectronics.

cond-mat.mes-hall↗

arXiv2025

Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation

MnBi2nTe3n+1 (MBT) is a representative family of intrinsic magnetic topological insulators, in which numerous exotic phenomena such as the quantum anomalous Hall effect are expected. The high-quality crystal growth and magnetism manipulation are the most essential processes. Here we develop a modified chemical vapor transport method using a feedback-regulated strategy, which provides the closed-loop control of growth temperature within +/- 0.1 degree Celsius. Single crystals of MnBi2Te4, MnBi4Te7, and MnBi6Te10 are obtained under different temperature intervals respectively, and show variable tunability on magnetism by finely tuning the growth temperatures. Specifically, the cold-end temperatures not only vary the strength of antiferromagnetic coupling in MnBi2Te4, but also induce magnetic ground state transitions from antiferromagnetism to ferromagnetism in MnBi4Te7 and MnBi6Te10. In MnBi2Te4 with optimized magnetism, quantized transport with Chern insulator state is also realized at the low field of 3.7 T. Our results provide a systematic picture for the crystal growth and the rich magnetic tunability of MBT family, providing richer platforms for the related researches combining magnetism and topological physics.

cond-mat.mtrl-sci↗

arXiv2025

Discovery of unconventional charge-spin-intertwined density wave in magnetic kagome metal GdTi3Bi4

The symmetry breaking and its interplay among spin, charge, and lattice degrees of freedom is crucial for understanding correlated quantum states such as charge density waves (CDWs) and unconventional superconductivity. Here, we report the discovery by low-temperature scanning tunneling microscopy/spectroscopy of unconventional charge-spin-intertwined density waves in magnetic kagome metal GdTi3Bi4, which exhibits the one-third magnetization plateau. We reveal the emergence of 3Q CDWs incommensurate with the crystalline lattice in both periodicity and orientation, breaking all mirror and rotation symmetries. The CDW exhibits incommensurate-commensurate transitions in an applied magnetic field and transitions between 3Q and 1Q CDWs as a function of field and temperature, accompanied by changes in the spatial symmetries. Remarkably, the quantum and classic melting of the CDWs exhibits a phase structure which is consistent with the magnetization phase diagram of bulk GdTi3Bi4, providing strong evidence for the intertwined charge-spin density wave order. The origin of the charge-spin intertwinement is further evidenced by the observed hybridization between itinerant electrons and Gd local moments. Our findings uncover an unconventional form of charge-spin orders and offer new insights into a broad class of multi-components density wave formation in kagome and other correlated quantum materials.

cond-mat.str-el↗

arXiv2025

Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic proximity effect remains quite weak, restricting their practical device applications. Here, we report a large intrinsic AHE with a resistivity of 114 nΩ cm at 5 K in noncoplanar magnetic heterostructures of Cr5Te6/Pt. This is the record-high AHE value among all the magnetic insulators/heavy metal heterostructures. A reversal of the AHE signal occurs due to the reconstruction of Berry curvature at the Fermi level, which is verified by the first-principles calculations. Topological spin textures at the interface are directly visualized via high-magnetic-field magnetic force microscopy, which accounts for the large AHE, as confirmed by the atomic simulations. These findings open a new avenue for exploring the large AHE in heterointerfaces and facilitate the potential applications in topological spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7

Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures.

cond-mat.mtrl-sci↗

arXiv2024

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields and a square hysteresis loop near zero magnetic field in all these devices. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Our theoretical calculations interpret this even-odd layer-dependent exchange bias effect as a consequence of contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices.

cond-mat.mtrl-sci↗