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Guanghua Yu

Publications and source records attributed to Guanghua Yu.

20 records · Page 2Linked to original sources

Electric-field-driven Non-volatile Multi-state Switching of Individual Skyrmions in a Multiferroic Heterostructure

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy-consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multi-state feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multi-state skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is key to the practical applications of TIs. Here, we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering. The SiO2/Si substrates enable us to electrically tune (Bi1-xSbx)2Te3 and Cr-doped (Bi1-xSbx)2Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

physics.app-ph↗