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Guangzhao Chen

Publications and source records attributed to Guangzhao Chen.

3 recordsLinked to original sources

Dense pentacene cocrystal demonstrates room-temperature coherent control

Maximizing the number of addressable spins within a fixed volume can improve ensemble quantum sensor sensitivity, but dense packing usually increases dipolar interactions and excited-state transport, shortening coherence and suppressing optical readout. Here we report a 2:1 cocrystal of 6,13-dihydropentacene and pentacene (DHP/Pc) containing 33.3 mol% pentacene ($3.3\times10^{5}$ ppm; $9.51\times10^{20}$ cm$^{-3}$), a volumetric spin-site density more than two orders of magnitude above previous benchmarks, NV-diamond and pentacene-doped p-terphenyl (PDP). Despite this density, DHP/Pc exhibits microsecond spin coherence, room-temperature optically detected magnetic resonance and coherent control. Time-resolved measurements indicate that the long-lived triplet population is generated predominantly by intersystem crossing and exhibits strong, non-thermal sublevel polarization. Density-functional theory calculations further suggest that the native cocrystal geometry weakens electronic coupling between neighboring pentacenes, while the higher DHP triplet energy creates a barrier to triplet migration. These results identify molecular packing and coformer triplet energetics as complementary design parameters for preserving coherence in high spin-site density systems, demonstrating cocrystallization as a promising route to dense, optically addressable spin materials for room-temperature ensemble quantum sensing.

quant-ph↗

Simulating the dynamics of NV^- formation in diamond in the presence of carbon self-interstitials

This study utilises linear-scaling density functional theory (DFT) and develops a new machine-learning potential for carbon and nitrogen (GAP-CN), based on the carbon potential (GAP20), to investigate the interaction between carbon self-interstitials and nitrogen-vacancy (NV) centers in diamond, focusing on their excited states and diffusion behaviour. From the simulated excited states, 'Bright', 'Spike', and 'Dark' defect configurations are classified based on their absorption spectrum features. Furthermore, machine learning molecular dynamics simulation provides insight into the possible diffusion mechanism of Ci and NV, showing that Ci can diffuse away or recombine with NV. The study yields new insight into the formation of NV defects in diamond for quantum technology applications.

physics.comp-ph↗

Laser Activation of Single Group-IV Colour Centres in Diamond

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.

quant-ph↗