arXiv subjects

Gunther Springholz

Publications and source records attributed to Gunther Springholz.

At least 19 recordsLinked to original sources

arXiv2026

Tuning Dirac-Rashba and Double Dirac Cone Surface States of Topological Crystalline Insulator Pb$_{1-x}$Sn$_{x}$Se by Transition Metal Adsorbate

The electronic structure of topological insulator/magnetic metal (TI/MM) interfaces is of great importance for understanding of exotic spin-dependent phenomena and realization of advanced spin-orbitronic devices. Here, we employ a model system of submonolayer transition metal (TM) deposited on the surface of a topological crystalline insulator (TCI) of Pb$_{1-x}$Sn$_{x}$Se to systematically map out the modification of the surface electronic structure by angle-resolved photoemission spectroscopy (ARPES) as a function of coverage. For the polar (111) Pb$_{1-x}$Sn$_{x}$Se surface, we observe the coexistence of the Dirac topological surface states (TSS) and Rashba-split surface states (RSS) induced by the combined effects of inversion-symmetry breaking, surface band bending and orbital angular momentum effects. In particular, we demonstrate very large Rashba splittings can be obtained and the Rashba parameter (${\alpha}_R$) can be tuned over a remarkably wide range from 0 to 3.5 eV ${\cdot}$ $\mathring{\mathrm{A}}$, depending on the type and coverage of the TM adatoms. Model-Hamiltonian calculations corroborate the experimental findings and reveal that this coexistence results from the filling of the TSS by the surface doping caused by the TM. In contrast, for the nonpolar (001) surface exhibiting a double Dirac cone topological surface state, the inversion symmetry is preserved and hence no Rashba-split surface states emerge. Instead, surface charge imbalance induces dephasing of the wave functions of the double Dirac cones that diminishes the momentum-space separation between them. These findings shed light on novel phenomena occurring at the topological insulator / transition metal interface, offering a versatile platform for future spintronic and quantum devices.

cond-mat.mtrl-sci↗

arXiv2026

Magnetically tunable symmetry-enforced nodal lines producing huge anomalous Hall conductivity in altermagnetic $\alpha$-MnTe

Altermagnetic $\alpha$-MnTe exhibits huge anomalous Hall conductivity (AHC) up to room-temperature together with weak ferromagnetism arising from spin and orbital polarizations. We clarify the origin of the large value of the AHC by identifying two sets of distinct symmetry-enforced nodal lines in the valence bands with Mn character, located at $k_z=0$ and $k_z=\frac{\pi}{c}$, protected by mirror symmetry $M_z$ and glide symmetry $G_z = \{M_z\,|\,0,0,\tfrac{c}{2}\}$, respectively. Both nodal lines are energy-dependent with an approximate C$_6$ symmetry, which is reduced to an exact C$_2$ symmetry due to the presence of the N\'eel vector. The highest valence band exhibits a Mexican-hat dispersion, whereas the second-highest valence band exhibits an inverted Mexican-hat dispersion, with nodal lines at the crossing between the two bands. Within first-principles accuracy, we demonstrate that these nodal lines give rise to the large AHC observed experimentally and exhibit a strong interplay with the weak ferromagnetism. We further show that even a small spin canting strongly modifies the nodal lines and the AHC, making them both magnetically tunable. By disentangling the altermagnetic and ferromagnetic contributions to the AHC, the altermagnetic contribution dominates at small canting angles, while the ferromagnetic contribution becomes sizeable for larger values. Using linear dichroism in angle-resolved photoemission spectroscopy, we show a signature of the nodal line at the border of the Brillouin zone.

cond-mat.mtrl-sci↗

arXiv2026

Optical control of conductivity type and valley polarization via persistent photoconductivity in (Pb,Sn)Se quantum wells

The ability to tune the Fermi level of semiconductors is at the heart of modern electronics. Here, we demonstrate that persistent photoconductivity (PPC) enables tuning of carrier density, conductivity type, and, consequently, the valley polarization in (Pb,Sn)Se/(Pb,Eu)Se quantum wells. Illumination of these samples induces Fermi level shifts that convert the system from a threefold-degenerate $\bar{M}$-valley two-dimensional hole gas to a single $\bar{\Gamma}$-valley-polarized electron gas with similar values of mobility. The optically induced state persists for more than $10^{3}$ minutes at cryogenic temperatures and enables stepwise optical gating without the need for device processing. These transitions are confirmed by the sign inversion of the Hall slope and the modification of quantum Hall plateau degeneracies measured in magnetic fields up to 35 T. Landau level $k\cdot p$ model calculations quantitatively reproduce the experimental data. Furthermore, studies of weak-field magnetoresistance demonstrate the significance of quantum localization phenomena at the transition between the weakly and strongly localized regimes in compensated narrow-gap semiconductors. Spectral studies allow us to identify the critical role of the barrier material and determine the photon energies that can reverse the PPC effect. The persistent light-induced upward shift of the Fermi level in the $p$-type quantum well is explained in terms of specific energy positions of donor and acceptor defect states in the studied system. Our results demonstrate that PPC is a powerful optical gating tool for the IV-VI quantum wells, a versatile platform for reconfigurable valleytronic architectures.

cond-mat.mes-hall↗

arXiv2025

Detection of Image Potential States above the vacuum level in GeTe

The ferroelectric semiconductor {\alpha}-GeTe(111) has attracted significant attention in the last decade due to its unique properties, with extensive studies focusing on its occupied electronic bandstructure. In contrast, its unoccupied states - particularly those near the conduction band minimum - remain largely unexplored. In an effort to characterize those states, we surprisingly observe three image potential states (IPS) in {\alpha}-GeTe(111) extending up to 0.8 eV above the vacuum level. Using time and angle-resolved photoemission spectroscopy, we resolve the full parabolic dispersions of the first three IPS and determine their binding energies. Our analysis, combined with Bloch spectral function calculations, reveals that the unexpected persistence of IPS above the vacuum level originates from strong dipole transitions and the presence of large electron reservoirs in GeTe.

cond-mat.str-el↗

arXiv2025

Conduction Band Structure and Ultrafast Dynamics of Ferroelectric $\alpha$-GeTe(111)

$\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) material for which a significative lattice distortion combined with a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface, which have been intensively probed in the occupied valence states using static angle-resolved photoemission spectroscopy (ARPES). Nevertheless, its unoccupied conduction band structure remains unexplored, in particular the experimental determination of its electronic band gap across momentum space. Using time-resolved ARPES based on high-repetition rate and extreme ultraviolet femtosecond (fs) laser, we unveil the band structure of $\alpha$-GeTe(111) in the full Brillouin zone, both in the valence and conduction states, as well as the exploration of its out-of-equilibrium dynamics. Our work confirms the semiconducting nature of $\alpha$-GeTe(111) with a 0.85 eV indirect band gap, which provides an upper limit for comparison to density functional theory calculations. We finally reveal the dominant scattering mechanisms of photoexcited carriers during the out-of-equilibrium dynamics under fs light pulses.

cond-mat.mtrl-sci↗

arXiv2025

Topological phase diagram and quantum magnetotransport effects in (Pb,Sn)Se quantum wells with magnetic barriers (Pb,Eu)Se

In this study, we report here on a successful growth by molecular beam epitaxy of high crystalline quality Pb$_{1-x}$Sn$_{x}$Se:Bi/Pb$_{1-y}$Eu$_{y}$Se QWs with $x = 0.25$ and $y = 0.1$, and on their magnetotransport characterization as a function of the QW thickness between 10 and 50 nm, temperatures down to 300 mK, perpendicular and tilted magnetic fields up to 36 T. The character of weak antilocalization magnetoresistance and universal conductance fluctuations points to a notably long phase coherence length. It is argued that a relatively large magnitude of the dielectric constant of IV-VI compounds suppresses the decoherence by electron-electron scattering. The observation of Shubnikov-de-Haas oscillations and the quantum Hall effect, together with multiband $k\cdot p$ modelling, have enabled us to assess valley degeneracies, the magnitude of strain, subbands effective masses, and the topological phase diagram as a function of the QW thickness. Our results demonstrate that further progress in controlling Sn content, carrier densities, and magnetism in Pb$_{1-x}$Sn$_{x}$Se/Pb$_{1-y}$Eu$_{y}$Se QWs will allow for the exploration of the topologically protected quantized edge transport even in the absence of an external magnetic field.

cond-mat.mes-hall↗

arXiv2024

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor

Following the recent observation of anomalous Hall effect in antiferromagnetic hexagonal MnTe thin films, related phenomena at finite frequencies have come into focus. Magnetic circular dichroism (MCD) is the key material property here. In the x-ray range, the XMCD has already been demonstrated and used to visualise domains via photoemission electron microscopy (PEEM). Here we report on MCD in optical range and discuss its microscopic mechanism.

cond-mat.mtrl-sci↗

arXiv2024

Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism

Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can identify the bands and momenta responsible for the underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First, the relevant inter-band transitions usually generate MCD in the infrared (IR) range, requiring large samples with high quality. Second, while most magnetic materials are metallic, the relation between MCD and BC in metals remains unclear. Here, we report the observation of MCD in the IR range along with the anomalous Hall effect in thin film MnBi2Te4. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via BC in a metal, we show that this transition accompanies an abrupt onset of BC, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of BC away from the commonly considered {\Gamma} point. Our findings demonstrate a novel experimental approach for detecting BC and identifying the responsible bands and momenta, generally applicable to magnetic materials.

cond-mat.mes-hall↗

arXiv2024

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.

cond-mat.mtrl-sci↗

arXiv2023

A Novel Ferroelectric Rashba Semiconductor

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature

The ferroelectric semiconductor $\alpha$-SnTe has been regarded as a topological crystalline insulator and the dispersion of its surface states has been intensively measured with angle-resolved photoemission spectroscopy (ARPES) over the last decade. However, much less attention has been given to the impact of the ferroelectric transition on its electronic structure, and in particular on its bulk states. Here, we investigate the low-energy electronic structure of $\alpha$-SnTe with ARPES and follow the evolution of the bulk-state Rashba splitting as a function of temperature, across its ferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, we observe a persistent band splitting up to room temperature, which is consistent with an order-disorder contribution to the phase transition that requires the presence of fluctuating local dipoles above $T_c$. We conclude that no topological surface state can occur at the (111) surface of SnTe, at odds with recent literature.

cond-mat.mtrl-sci↗

arXiv2023

Ultrafast dynamics of optically excited charge carriers in the room-temperature antiferromagnetic semiconductor $\alpha $-MnTe

We report on time-resolved optical and terahertz ultrafast spectroscopy of charge-carrier dynamics in the room-temperature antiferromagnetic semiconductor $\alpha $-MnTe. By optically pumping the system with 1.55 eV photons at room temperature, we excite charge carriers in the conduction band through the indirect band gap and investigate the dynamical response of nonequilibrium states using optical as well as terahertz transmission probes. Three relaxation processes are revealed by their characteristic relaxation times of the order of 1, 10, and 100~ps, whose exact values are functions of the pump fluence. For high pump fluences nonlinear dependence on the pump fluence is observed both in the optical and terahertz probes.

cond-mat.mtrl-sci↗

arXiv2022

Collective topological spin dynamics in a correlated spin glass

The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric semiconductor is found to reverse with current pulses six orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Lastly, we present a novel methodology to controllably harness this stochastic magnetization dynamics, allowing us to detect spatiotemporal nucleation of topological spin textures we term ``skyrmiverres''.

cond-mat.mtrl-sci↗

arXiv2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric $\alpha$-GeTe(111)

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, $\alpha$-GeTe(111) is a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong spin-orbit interaction gives rise to giant Rashba coupling. Its room temperature ferroelectricity was recently demonstrated as a route towards a new type of highly energy-efficient non-volatile memory device based on switchable polarization. Currently based on the application of an electric field, the writing and reading processes could be outperformed by the use of femtosecond (fs) light pulses requiring exploration of the possible control of ferroelectricity on this timescale. Here, we probe the room temperature transient dynamics of the electronic band structure of $\alpha$-GeTe(111) using time and angle-resolved photoemission spectroscopy (tr-ARPES). Our experiments reveal an ultrafast modulation of the Rashba coupling mediated on the fs timescale by a surface photovoltage (SPV), namely an increase corresponding to a 13 % enhancement of the lattice distortion. This opens the route for the control of the FE polarization in $\alpha$-GeTe(111) and FE semiconducting materials in quantum heterostructures.

cond-mat.mtrl-sci↗

arXiv2022

Probing the magnetic band gap of the ferromagnetic topological insulator MnSb$_2$Te$_4$

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

cond-mat.mes-hall↗

arXiv2022

Interaction between interface and massive states in multivalley topological heterostructures

Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown along the [111] direction. It is shown that the shape of the 2D Fermi surfaces of topological interface states residing at the TCI/trivial insulator interfaces are strongly affected by the valley anisotropy of topologically trivial Pb1-yEuySe barriers. This phenomenon is shown to be due to the deep penetration of the topological interface states into the barriers. For the valleys tilted with respect to the confinement direction, a significant interaction between topological states and the conventional massive quantum well states is observed, evidenced by the resulting large anti-crossings between Landau levels. These are theoretically well-described by a k.p model that takes into account tilt and anisotropy of the valleys in two dimensions. Therefore, our work provides a precise characterization of the topological interface state valley splitting, as well as an accurate determination of the anisotropy of their Dirac cone dispersion.

cond-mat.mes-hall↗

arXiv2020

Triple point fermions in ferroelectric GeTe

Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone. The rich manifold of effects opens up promising perspectives for studying non-trivial phenomena and multi-component fermions in condensed matter systems.

cond-mat.mtrl-sci↗

arXiv2020

Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se

Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates Berry's phase quantization, leading to additional dephasing in weak-antilocalization magnetoresistance (WAL-MR). Our experimental studies of WAL-MR corroborate these theoretical expectations in (111) Pb$_{1-x}$Sn$_x$Se thin film with Sn contents $x$ corresponding to both topological crystalline insulator and topologically trivial phases. In particular, we find the shortening of the phase coherence length in samples with intentionally broken mirror symmetry. Our results indicate that the classification of quantum transport phenomena into universality classes should encompass, in addition to time-reversal and spin-rotation invariances, spatial symmetries in specific systems.

cond-mat.mes-hall↗