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Guowei Lyu

Publications and source records attributed to Guowei Lyu.

2 recordsLinked to original sources

Observation of Kondo Effect in Rhombohedral Graphene Superlattices

Kondo effect in strongly correlated systems arises from the antiferromagnetic coupling between itinerant conduction electrons and localized magnetic moments, giving rise to a variety of exotic quantum phenomena. Two-dimensional moiré superlattice systems provide a highly tunable platform featuring topological flat bands, where Wannier orbitals are spatially confined by the periodic moiré potential and serve as localized magnetic moments, enabling the observable Kondo effect. Here we experimentally demonstrate Kondo interactions in hexalayer rhombohedral graphene moiré superlattices through magneto-transport and temperature-dependent measurements. With increasing magnetic field, the magnetoresistance exhibits an increase-decrease transition across a critical field B_c, while the Hall resistance R_xy undergoes a sign reversal near B_c. Moreover, as temperature decreases, the longitudinal resistance R_xx first increases logarithmically and then decreases following a T^2 behavior, indicating a transition to heavy fermion liquid. These behaviors can be consistently explained by the breakdown of Kondo singlets induced by either magnetic field or temperature, which liberates carriers previously bound to localized moments, thereby enhancing conductivity and altering the dominant carrier type. Furthermore, our results demonstrate that the Kondo interaction can be continuously tuned by both carrier density n and displacement electric field D, and suggest the emergence of a Kondo insulating state. Our findings provide deep insight into the Kondo effect in moiré engineered flat-band systems, paving the path for exploring exotic correlated quantum phases.

cond-mat.mes-hall

Electrical detection of high-order optical orbital angular momentum

The orbital angular momentum (OAM) of light provides an unbounded set of orthogonal modes for ultrahigh-capacity optical information processing. However, current OAM detection schemes typically rely on light interference or diffraction, which require bulky optical components and pose a major obstacle to on-chip integration. Here, we demonstrate a fully integrated silicon-based photodetector that enables direct electrical detection of light OAM. This photodetector can resolve vortex beams with topological charges from m = -9 to 9, achieving a record-high mode number resolution among on-chip devices. By integrating plasmonic gratings onto the device electrodes, incident vortex beams can be converted into surface plasmon polaritons with OAM-dependent splitting angles, which in turn produce photocurrents that vary monotonically with the OAM order. Further incorporation of a surface dielectric lens can enhance mode resolution, and a split-electrode architecture enables OAM chirality discrimination. Owing to its CMOS-compatibility and spectral scalability, this platform provides a compact and robust solution for integrated OAM detection, opening new opportunities for on-chip optical communication and computing systems based on structured light.

physics.optics