Haiyue Dong | Search arXiv

arXiv2026

OT-PCA: New Key-Recovery Plaintext-Checking Oracle Based Side-Channel Attacks on HQC with Offline Templates

In this paper, we introduce OT-PCA, a novel approach for conducting Plaintext-Checking (PC) oracle based side-channel attacks, specifically designed for Hamming Quasi-Cyclic (HQC). By calling the publicly accessible HQC decoder, we build offline templates that enable efficient extraction of soft information for hundreds of secret positions with just a single PC oracle call. Our method addresses critical challenges in optimizing key-related information extraction, including maximizing decryption output entropy and ensuring error pattern independence, through the use of genetic-style algorithms. Extensive simulations demonstrate that our new attack method significantly reduces the required number of oracle calls, achieving a 2.4-fold decrease for hqc-128 and even greater reductions for hqc-192 and hqc-256 compared to current state-of-the-art methods. Notably, the attack shows strong resilience against inaccuracy in the PC oracle-when the oracle accuracy decreases to 95%, the reduction factor in oracle call requirements increases to 7.6 for hqc-128. Lastly, a real-world evaluation conducted using power analysis on a platform with an ARM Cortex-M4 microcontroller validates the practical applicability and effectiveness of our approach.

cs.CR↗

arXiv2025

Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$

Charged domain walls (CDW) in ferroelectrics are emerging as functional interfaces with potential applications in nonvolatile memory, logic, and neuromorphic computing. However, CDWs in conventional ferroelectrics are vertical, buried, or electrically inaccessible interfaces that prevent their use in functional devices. Here, we overcome these challenges by stacking two opposite polar domains of van der Waals ferroelectric $α$-In$_2$Se$_3$ to generate artificial head-head (H-H) CDWs and use edge contact to fabricate charged domain wall-based field-effect transistors (CDW-FET). We relate the atomic structure to the temperature-dependent electrical and magneto-transport of the CDW-FET. CDW-FETs exhibit a metal-to-insulator transition with decreasing temperature and enhanced conductance and field-effect mobility compared to single domain $α$-In$_2$Se$_3$. We identify two regimes of transport: variable range hopping due to disorder in the band edge below 70 K and thermally activated interfacial trap-assisted transport above 70 K. The CDW-FETs show room-temperature resistance down to 3.1 k$Ω$ which is 2-9 orders of magnitude smaller than the single CDW in thin-film ferroelectrics. These results resolve longstanding challenges with high CDW resistance and their device integration, opening opportunities for gigahertz memory and neuromorphic computing.

cond-mat.mtrl-sci↗