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Hongyi Yu

Publications and source records attributed to Hongyi Yu.

At least 19 recordsLinked to original sources

SNR-ST-Mix: Sample-specific Neighborhood Regression Mixup for Augmented Spatial Transcriptomics Imputation with Deep Neural Network

Purpose: Spatial transcriptomics (ST) enables gene expression measurements within the tissue context. However, these measurements are often noisy, low-resolution, and sparsely sampled, which limits the recovery of fine spatial structure. Deep neural networks have become powerful tools for expression imputation from histology, but their performance remains constrained by limited sample sizes and a lack of biologically informed augmentation. Most of the existing augmentation strategies for learning are designed for classification tasks rather than regression, which neglect spatial and transcriptomic relationships, leading to biologically implausible interpolations that hinder prediction performance. Approach: To address these limitations, we propose SNR-ST-Mix, a geometry- and expression-aware data augmentation framework designed specifically for ST data. It constrains mixing to a spot's k-nearest spatial neighbors and adaptively weights interpolation coefficients based on expression similarity, generating augmented samples that preserve local biological structure while ensuring spatial smoothness. This dual conditioning yields synthetic examples that expand the effective training manifold, promote generalization, and enhance prediction stability under sample-specific training. Results: Extensive experiments with various tissue types demonstrate that SNR-ST-Mix consistently outperforms conventional augmentation methods without requiring architectural changes or additional computation. Conclusions: SNR-ST-Mix provides an effective and biologically principled augmentation strategy for spatial transcriptomics regression tasks. By explicitly leveraging spatial geometry and transcriptomic similarity, it expands the effective training manifold and improves predictive performance without increasing model complexity.

cs.LG

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall

CA-YOLO: Cross Attention Empowered YOLO for Biomimetic Localization

In modern complex environments, achieving accurate and efficient target localization is essential in numerous fields. However, existing systems often face limitations in both accuracy and the ability to recognize small targets. In this study, we propose a bionic stabilized localization system based on CA-YOLO, designed to enhance both target localization accuracy and small target recognition capabilities. Acting as the "brain" of the system, the target detection algorithm emulates the visual focusing mechanism of animals by integrating bionic modules into the YOLO backbone network. These modules include the introduction of a small target detection head and the development of a Characteristic Fusion Attention Mechanism (CFAM). Furthermore, drawing inspiration from the human Vestibulo-Ocular Reflex (VOR), a bionic pan-tilt tracking control strategy is developed, which incorporates central positioning, stability optimization, adaptive control coefficient adjustment, and an intelligent recapture function. The experimental results show that CA-YOLO outperforms the original model on standard datasets (COCO and VisDrone), with average accuracy metrics improved by 3.94%and 4.90%, respectively.Further time-sensitive target localization experiments validate the effectiveness and practicality of this bionic stabilized localization system.

cs.CV

Synthesizing Strong-Coupling Kohn-Luttinger Superconductivity in 2D Van der Waals materials

The Kohn-Luttinger (KL) mechanism of pairing, which describes superconductivity emergent from repulsive interactions, typically yields Cooper pairs at high angular-momentum ($\ell > 0$) and extremely low transition temperatures ($T_c$). Here, we reveal an inter-layer s-wave ($\ell=0$) KL superconductivity with greatly elevated $T_c$ in a multi-layer Hubbard model, which prototypes stacked two-dimensional (2D) electrons in layered van der Waals materials. By employing determinant quantum Monte Carlo and dynamical mean-field theory simulations, we show that a strong pairing attraction $V^{*}$, without the mediation of collective modes, can emerge between inter-layer electrons in the system. As inter-layer repulsion $U$ increases, $V^{*}$ evolves from a conventional KL relation of $V^{*} \propto -U^2$, to a linear strong-coupling scaling of $V^{*} \propto -U$, resulting in enhanced superconductivity at large $U$. This strong-coupling KL pairing is robust against changes in lattice geometries and dimensionalities, and it can persist, in the presence of a large remnant Coulomb repulsion $U^{*}$ between pairing electrons. Using \textit{ab initio} calculations, we propose a few 2D layered van der Waals materials that can potentially realize and control this unconventional superconductivity.

cond-mat.supr-con

Electronic phonon-induced magnetism in moir\'e Mott-Wigner crystals

We show that magnetism in moir\'e Mott-Wigner crystals can be induced by the collective vibration of electrons around their equilibrium positions (i.e., electronic phonons), even without spin interactions between electrons. Due to a geometric valley-orbit coupling from the Berry phase effect, the zero-point energy of electronic phonons reaches minimum when electrons are fully valley polarized. This leads to a spontaneous magnetization when below a critical temperature. We also propose to engineer the magnetism through the photoexcitation of chiral electronic phonons.

cond-mat.mes-hall

Electronic Phonons in a Moir\'e Electron Crystal

Collective quantum phenomena, such as the excitation of composite fermions1, spin waves2, and exciton condensation3,4, can emerge in strongly correlated systems like the fractional quantum Hall states5, spin liquids6, or excitonic insulators7. Two-dimensional (2D) moir\'e superlattices have emerged as a powerful platform for exploring such correlated phases and their associated collective excitations8,9. Specifically, electron crystals stabilized by longrange Coulomb interactions may host collective vibrational excitations emerging from electron correlations10, termed electronic phonons, which are fundamentally distinct from atomic lattice phonons. Despite theoretical prediction of their existence in moir\'e electron crystals11, direct experimental evidence has remained elusive. Here we report the observation of electronic phonons in the Mott insulating and stripe phases of a WS2/WSe2 moir\'e superlattice, achieved through light scattering measurements. The phonon energies, temperature and filling factor dependencies, along with theoretical modeling, corroborate their origin as collective vibrations of a correlated electron crystal. Polarization-resolved measurements further indicate rotational symmetry breaking in the Mott state. Notably, these electronic phonons exhibit strong tunability in energy, intensity, and polarization under external electric or magnetic fields, highlighting rich and controllable lattice dynamics of the electron crystal. These findings provide direct spectroscopic evidence for the electronic crystalline nature of correlated phases, opening avenues for probing and manipulating collective excitations in correlated electron systems.

cond-mat.str-el

Highly tunable band structure in ferroelectric R-stacked bilayer WSe$_2$

Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moir\'e quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of R-stacked bilayer WSe$_2$ to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the $\Lambda$ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of R-stacked WSe$_2$, establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.

cond-mat.mtrl-sci

Interaction enhanced inter-site hoppings for holons and interlayer exciton insulators in moir\'e correlated insulators

In moir\'e-patterned van der Waals structures of transition metal dichalcogenides, correlated insulators can form under integer and fractional fillings, whose transport properties are governed by various quasiparticle excitations including holons, doublons and interlayer exciton insulators. Here we theoretically investigate the nearest-neighbor inter-site hoppings of holons and interlayer exciton insulators. Our analysis indicates that these hopping strengths are significantly enhanced compared to that of a single carrier. The underlying mechanism can be attributed to the strong Coulomb interaction between carriers at different sites. For the interlayer exciton insulator consisting of a holon and a carrier in different layers, we have also obtained its effective Bohr radius and energy splitting between the ground and first-excited states.

cond-mat.mes-hall

Twistronics and moir\'e superlattice physics in 2D transition metal dichalcogenides

The moir\'e superlattices formed by stacking 2D semiconducting transition metal dichalcogenides (TMDs) with twisting angle or lattice mismatch have provided a versatile platform with unprecedented tunability for exploring many frontier topics in condensed matter physics, including optical, topological and correlation phenomena. This field of study advances rapidly and a plethora of exciting experimental and theoretical progresses have been achieved recently. This review aims to provide an overview of the fundamental properties of TMDs moir\'e superlattices, as well as highlight some of the major breakthroughs in this captivating field.

cond-mat.mes-hall

Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential

We propose to engineer topological exciton structures in layered transition metal dichalcogenides through hybridizing different Rydberg states, which can be induced by a periodic electrostatic potential remotely imprinted from charge distributions in adjacent layers. Topological phase diagrams are obtained for potentials with various strengths and wavelengths. We find the lowest band of the interlayer exciton can become topologically nontrivial, which exhibits a small bandwidth as well as quantum geometries well suited for realizing the bosonic fractional Chern insulator. For monolayer excitons, topological bands and in-gap helical edge states can emerge near the energy of 2p states.

cond-mat.mes-hall

Pressure Tuning of Layer-hybridized Excitons in Trilayer WSe2

We demonstrate dynamic pressure tuning (0-6.6 GPa) of layer-hybridized excitons in AB-stacked trilayer WSe$_2$ via diamond-anvil-cell-integrated reflectance spectroscopy. Pressure-controlled interlayer coupling manifests in enhanced energy-level anti-crossings and oscillator strength redistribution, with Stark shift analysis revealing a characteristic dipole moment reduction of 11%. Notably, the hybridization strength between the intra- and interlayer excitons triples from $\sim$10 meV to above $\sim$30 meV, exhibiting a near-linear scaling of 3.5$\pm$0.2 meV/GPa. Spectral density simulations resolve four distinct components, i.e., intralayer ground/excited and interlayer ground/excited excitons, with their relative weights transitioning from one component dominant to strongly hybridized at higher pressures. Our findings highlight the potential for controlling excitonic properties and engineering novel optoelectronic devices through interlayer compression.

cond-mat.mtrl-sci

Chiral phonons of honeycomb-type bilayer Wigner crystals

We theoretically investigated the chiral phonons of honeycomb-type bilayer Wigner crystals recently discovered in van der Waals structures of layered transition metal dichalcogenides. These chiral phonons can emerge under the inversion symmetry breaking introduced by an effective mass imbalance between the two layers or a moir\'e potential in one layer, as well as under the time-reversal symmetry breaking realized by applying a magnetic field. Considering the wide tunability of layered materials, the frequencies and chirality values of phonons can both be tuned by varying the system parameters. These findings suggest that bilayer honeycomb-type Wigner crystals can serve as an exciting new platform for studying chiral phonons.

cond-mat.mes-hall

Wave function forms of interlayer excitons in bilayer transition metal dichalcogenides

We numerically solve the electron-hole relative wave function of interlayer excitons in bilayer transition metal dichalcogenides, taking into account the screening effects from both the constituent transition metal dichalcogenides layers and the surrounding dielectric environment. We find that the wave function of the 1s ground state is close to the gaussian form, rather than the well-known exponential decay form of the two-dimensional hydrogen model. Meanwhile, the 2s state has an energy $E_{2s}$ significantly higher than $E_{2p}$ of the 2p state, but becomes close to $E_{3d}$ of the 3d state with $E_{2s}-E_{2p} \approx E_{3d}-E_{2p} \approx E_{2p}-E_{1s}$ under a large interlayer separation and weak environmental screening. Under general conditions, the solved 1s, 2p and 3d wave functions can be fit nearly perfectly by simple analytic forms which smoothly cross from gaussian to exponential decay. These analytic forms can facilitate the accurate evaluation of various exciton quantities for device applications.

cond-mat.mes-hall

Distinct moir\'e Exciton dynamics in WS2/ WSe2 heterostructure

This letter reports a time resolved pump-probe reflectance spectroscopic study on moir\'e excitons in a twisted monolayer WS2/WSe2 heterostructure. By probing at the resonant energies of intralayer excitons, we observed their distinct temporal tracks under the influence of interlayer excitons, which we attribute to the discrepancy in spatial distribution of the intralayer excitons in different layers. We also observed that intralayer moir\'e excitons in WSe2 layer differ at decay rate, which reflects different locations of Wannier-like and charge-transfer intralayer excitons in a moir\'e cell. We concluded that the interlayer moir\'e excitons form within a few picoseconds and have the lifetime exceeding five nanoseconds. Our results provide insights into the nature of moir\'e excitons and the strain's significant impact on their behaviour in twisted heterostructures, which could have important implications for the development of novel optoelectronic devices.

cond-mat.mes-hall

F\"orster valley-orbit coupling and topological lattice of hybrid moir\'e excitons

Hybrid exciton in moir\'e superlattices of two-dimensional (2D) semiconductors inherits the electric dipole, strong moir\'e trapping, and stacking optical selection rules from its interlayer part, whereas the intralayer part is intended for enhancing optical coupling strength. Here, we show that electron-hole Coulomb exchange, or F\"orster coupling, within the intralayer component qualitatively alters the properties of moir\'e excitons, enabling their coherent hopping between moir\'e traps laterally separated over 10 nm and/or across layers, where their kinetic propagation is completely suppressed. Valley-flip hopping channels are found as significant as the valley-conserving ones, leading to rich possibilities to tailor valley-orbit-couplings and introduce non-trivial topology to the moir\'e exciton superlattice. In twisted MoTe$_2$ where hybrid moir\'e excitons feature a symmetry protection from radiative recombination, we show that F\"orster valley-orbit-coupling can give rise to a rich topological phase diagram.

cond-mat.mes-hall

Interlayer couplings in homobilayer structures of MSi2X4 (M = Mo/W, X = N/P/As)

We investigated the interlayer coupling effect in homobilayer structures of MSi2X4 with M = Mo/W and X = N/P/As. Through the combination of first-principles calculations and analytical formulations, the equilibrium interlayer distance, layer energy difference and interlayer hopping strength are obtained for all six MSi2X4 materials, which are found to be insensitive to the type of M atom but differ significantly between X = N and X = P/As. In homobilayers with close to 0{\deg} twist angles, the interlayer charge redistribution introduces a stacking-dependent interlayer electrostatic potential with a magnitude reaching 0.1 eV in MSi2N4, suggesting that it can be an excellent candidate for studying the sliding ferroelectricity. The interlayer hopping strengths are found to be as large as several tens meV at valence band maxima positions K and {\Gamma}, and ~ 1 meV at the conduction band edge K. The resultant layer-hybridizations vary in a large range under different stacking registries, which can be used to simulate honeycomb lattice models with both trivial and non-trivial band topologies.

cond-mat.mtrl-sci

Coupled exciton internal and center-of-mass motions in two-dimensional semiconductors by a periodic electrostatic potential

We theoretically investigated the coupling between the exciton internal and center-of-mass motions in monolayer transition metal dichalcogenides subjected to a periodic electrostatic potential. The coupling leads to the emergence of multiple absorption peaks in the exciton spectrum which are the hybridizations of 1s, 2s and 2p$\pm$ Rydberg states with different center-of-mass momentums. The energies and wave functions of hybrid states can be strongly modulated by varying the profile of the periodic electrostatic potential, which well reproduces the recent experimental observations. Combined with the electron-hole exchange interaction, non-degenerate valley-coherent bright excitons can be realized by applying an in-plane electric field, with the valley coherence determined by the field direction.

cond-mat.mes-hall

Dipolar interactions enhanced by two-dimensional dielectric screening in few-layer van der Waals structures

We theoretically examined how the dielectric screening of two-dimensional layered materials affects the dipolar interaction between interlayer excitons in few-layer van der Waals structures. Our analysis indicates that the dipolar interaction is largely enhanced by two-dimensional dielectric screening at an inter-exciton separation of several nanometers or larger. The underlying mechanism can be attributed to the induced-charge densities in layered materials, which give rise to induced-dipole densities at large distances with directions parallel to that of the interlayer exciton. The interaction between quadrupolar excitons in trilayer structures are found to be enhanced even larger, with a magnitude one to two orders stronger than that without 2D dielectric screening. The strengths of these dipolar and quadrupolar interactions can be further tuned by engineering the dielectric environment.

cond-mat.mes-hall