Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling superior field management for lateral device breakdown compared to conventional Schottky gates. Devices using reverse-graded n-AlGaN contact layers achieved a record-low Rc of 0.56 Ω-mm. The Cr2O3 gate exhibits a turn-on voltage VON > 3.5 V and a positive threshold voltage shift of +1.63 V relative to Schottky gates, displaying enhanced channel depletion from the P-N junction. Fabricated devices show high Imax (590 mA/mm) and ION/IOFF of 3x10^7. Devices exhibited state-of-the-art VBR > 2.5 kV with 11.2 mΩ-cm^2 specific on-resistance (LGD = 9.55 um, average breakdown field > 2.5 MV/cm), while shorter gate-drain devices showed high breakdown fields up to 5.3 MV/cm with 0.28 mΩ-cm^2 specific on-resistance. These results showcase sputtered p-Cr2O3 as a viable, low thermal budget P-N junction gate technology for high-Al-composition AlGaN transistors in RF and power electronics.