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J. Schell

Publications and source records attributed to J. Schell.

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Experimental and theoretical study of electronic and hyperfine properties of hydrogenated anatase (TiO$_2$): defects interplay and thermal stability

In this study we report on the results from emission $^{57}$Fe M${ö}$ssbauer Spectroscopy experiments, using dilute $^{57}$Mn implantation into pristine (TiO$_2$) and hydrogenated anatase held at temperatures between 300-700 K. Results of the electronic structure and local environment are complemented with ab-initio calculations. Upon implantation both Fe$^{2+}$ and Fe$^{3+}$ are observed in pristine anatase, where the latter demonstrates the spin-lattice relaxation. The spectra obtained for hydrogenated anatase show no Fe$^{3+}$ contribution, suggesting that hydrogen acts as a donor. Due to the low threshold, hydrogen diffuses out of the lattice. Thus showing a dynamic behavior on the time scale of the $^{57}$Fe 14.4 keV state. The surrounding oxygen vacancies favor the high-spin Fe$^{2+}$ state. The sample treated at room temperature shows two distinct processes of hydrogen motion. The motion commences with the interstitial hydrogen, followed by switching to the covalently bound state. Hydrogen out-diffusion is hindered by bulk defects, which could cause both processes to overlap. Supplementary UV-Vis and electrical conductivity measurements show an improved electrical conductivity and higher optical absorption after the hydrogenation. X-ray photoelectron spectroscopy at room temperature reveals that the sample hydrogenated at 573 K shows presence of both Ti$^{3+}$ and Ti$^{2+}$ states. This could imply that a significant amount of oxygen vacancies and -OH bonds are present in the samples. Theory suggests that in the anatase sample implanted with Mn(Fe), probes were located near equatorial vacancies as next-nearest-neighbours, whilst a metastable hydrogen configuration is responsible for the annealing behavior.

cond-mat.mtrl-sci

Cd acceptors in $Ga_2O_3$, an atomistic view

Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $β$-$Ga_2O_3$ could strongly influence and contribute to the development of the next generation of power electronic. In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the $β$-$Ga_2O_3$ lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. The acceptor character of Cd in $β$-$Ga_2O_3$ is demonstrated, with Cd sitting in the octahedral Ga site in the negative charge state, showing no evidence of polaron deformations nor extra point defects nearby. Furthermore, thermally activated free electrons were observed for temperatures above ~648 K with an activation energy of 0.54(1) eV. At lower temperatures the local electron transport is dominated by a tunneling process between defect levels and the Cd probe.

cond-mat.mtrl-sci