Two-dimensional array of multicolored upconverted parametric amplification
This paper has been withdrawn by the authors
physics.optics↗
arXiv subjects
Jian Wu
Publications and source records attributed to Jian Wu.
Unusual vortex structure in ultrathin Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_3$ films
Using a first-principles-based approach, we determine the ferroelectric pattern in PbZr$_{0.5}$Ti$_{0.5}$O$_3$ ultrathin film. It is found that vortex stripes are formed in the system and they are responsible for the 180$^\circ$ domains observed. When a local external field is exerted, the vortex stripe transforms into the vortex loop structure, which leads to the formation of a smaller domain with the polarization antiparallel to the field in the center of the field region. This may provide a convenient way to manipulate nanodomains in thin films.
cond-mat.mtrl-sci↗
Ferroelectricity in Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ thin films: critical thickness and 180$^\circ$ stripe domains
The ferroelectric properties of disorder Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamitonian. It is found that there exists a critical thickness of about three unit cells ($\sim$12 Å) below which the ferroelectricity disappears under the condition that the in-plane polarizations are suppressed by sufficient clamping effect. Above the critical thickness, periodic $180^{\circ}$ stripe domains with out-of-plane polarizations are formed in the systems in order to minimize the energy of the depolarizaing field. The stripe period increases with increasing film thickness. The microscopic mechanism responsible for these phenomena is discussed.
cond-mat.mtrl-sci↗
Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes
Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms have the effect of making the two originally equivalent sublattices physically distinguishable.
cond-mat.mtrl-sci↗
Effects of Finite Deformed Length in Carbon Nanotubes
The effect of finite deformed length is demonstrated by squashing an armchair (10,10) single-walled carbon nanotube with two finite tips. Only when the deformed length is long enough, an effectual metal-semiconductor-metal heterojunction can be formed in the metallic tube. The effect of finite deformed length is explained by the quantum tunnelling effect. Furthermore, some conceptual designs of nanoscale devices are proposed from the metal-semiconductor-metal heterojunction.
cond-mat.mtrl-sci↗
Huge enhancement of electronmechanical responses in compositionally modulated PZT
Monte Carlo simulations based on a first-principles-derived Hamiltonian are conducted to study the properties of PZT alloys compositionally modulated along the [100] pseudocubic direction near the morphotropic phase boundary (MPB). It is shown that compositional modulation causes the polarization to continuously rotate away from the modulation direction, resulting in the unusual triclinic and C-type monoclinic ground states and huge enhancement of electromechanical responses (the peak of piezoelectric coefficient is as high as 30000 pC/N). The orientation dependence of dipole-dipole interaction in modulated structure is revealed as the microscopic mechanism to be responsible for these anomalies.
cond-mat.mtrl-sci↗
Electronic-structure theory of crystalline insulators under homogeneous electric field
Based on the conventional energy band theory, an approach is presented to describe the electronic structure of crystalline insulators in the presence of a finite homogeneous electric field. The expression of polarization is derived which extends the ``Berry-phase'' theory of polarization to nonzero fields. The characteristics of the solutions are studied in details and the associations with the existing perturbation theories and computational schemes are discussed.
cond-mat.mtrl-sci↗
Metal-to-semiconductor transition in squashed armchair carbon nanotubes
We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and Green's function method. We demonstrate a metal-to-semiconductor transistion while squashing the nanotubes and a general mechanism for such transistion. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and bond formation between the flattened faces in the squashed nanotubes.
cond-mat.mtrl-sci↗