arXiv subjects

Jingjun Xu

Publications and source records attributed to Jingjun Xu.

75 records · Page 5Linked to original sources

arXiv2011

Surface plasmons at the interface between graphene and kerr-type nonlinear medium

The properties of surface plasmons localized at the interface between graphene and kerr-type nonlinear medium in three dimensions are investigated. Compared with surface plasmons at the surface of metal, with the inevitable nonlinear refractive effect, the confinement of plasmon can be improved to three times than graphene plasmons without nonlinear contribution, but also with almost the same relative propagation length. Moreover, the dispersion relation and propation distance of graphene plasmons can be easily controlled by changing the fermi energy, temperature and relaxation time of graphene. Our results suggest a simple but useful potential application for precise nonlinear material sensor using graphene plasmons.

cond-mat.mes-hall↗

arXiv2011

Dark-bright gap solitons in coupled-mode one-dimensional saturable waveguide arrays

In the present work, we consider the dynamics of dark solitons as one mode of a defocusing photorefractive lattice coupled with bright solitons as a second mode of the lattice. Our investigation is motivated by an experiment which illustrates that such coupled states can exist with both components in the first gap of the linear band spectrum. This finding is further extended by the examination of different possibilities from a theoretical perspective, such as symbiotic ones where the bright component is supported by states of the dark component in the first or second gap, or non-symbiotic ones where the bright soliton is also a first-gap state coupled to a first or second gap state of the dark component. While the obtained states are generally unstable, these instabilities typically bear fairly small growth rates which enable their observation for experimentally relevant propagation distances.

nlin.PS↗

arXiv2006

Carrier Dynamics in Submonolayer InGaAs/GaAs Quantum Dots

Carrier dynamics of submonolayer (SML) InGaAs/GaAs quantum dots (QDs) were studied by micro-photoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveal shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated 2D InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.

cond-mat.mes-hall↗