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Jingyi Wu

Publications and source records attributed to Jingyi Wu.

22 records · Page 2Linked to original sources
arXiv2023

Risk-aware stochastic control of a sailboat

Sailboat path-planning is a natural hybrid control problem (due to continuous steering and occasional "tack-switching" maneuvers), with the actual path-to-target greatly affected by stochastically evolving wind conditions. Previous studies have focused on finding risk-neutral policies that minimize the expected time of arrival. In contrast, we present a robust control approach, which maximizes the probability of arriving before a specified deadline/threshold. Our numerical method recovers the optimal risk-aware (and threshold-specific) policies for all initial sailboat positions and a broad range of thresholds simultaneously. This is accomplished by solving two quasi-variational inequalities based on second-order Hamilton-Jacobi-Bellman (HJB) PDEs with degenerate parabolicity. Monte-Carlo simulations show that risk-awareness in sailing is particularly useful when a carefully calculated bet on the evolving wind direction might yield a reduction in the number of tack-switches.

math.OC↗
arXiv2019

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs.

physics.app-ph↗
arXiv2019

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the lower electric field in AlGaN, which suppressed the gate injection current. The dual-layer stressor scheme supports strain engineering as an effective approach in the pursuit of the normally-off operation of AlGaN/GaN HEMTs.

physics.app-ph↗