arXiv subjects

Jonathan Finley

Publications and source records attributed to Jonathan Finley.

14 recordsLinked to original sources

arXiv2026

Impact of Stoichiometry of MoSi Thin Films for Enhanced Sensitivity of Superconducting Nanowire Single-Photon Detectors

We report on the impact of the stoichiometry of superconducting MoSi thin films on the performance of superconducting nanowire single-photon detectors (SNSPDs). Specifically, we investigate the relation between the film parameters critical temperature Tc , sheet resistance Rs and superconductor thickness d and observe a universal scaling behavior. To benchmark the performance of SNSPDs fabricated from films having different stoichiometry, we measure the bias dependent count rate curves, while the detector is illuminated with wavelengths between 780 nm and 1550 nm. The detector performance as a function photon energy for different nanowire widths reveals a linear relation between the detection current and the photon energy. Furthermore, we determine the interfacial thermal boundary conductance $\beta$ between the superconducting thin film and the substrate, by measuring the return current of the SNSPD and find an increase of $\beta$ with increasing Mo concentration. The highest sensitivity amongst all compared devices is achieved for Mo$_{0.53}$Si$_{0.47}$, with low Tc (4.1 K) and high Rs (397$\Omega$/sq) at a film thickness of 5.4 nm.

cond-mat.supr-con↗

arXiv2026

Ultra-slow orbital and spin dynamics in an electrically tunable quantum dot molecule

Tunnel-coupled optically active quantum dot molecules (QDMs), have the potential to operate as spin-photon-interfaces with coupled spins that interact with two different photon frequencies at the same time. A prerequisite is to deterministically prepare two (electron or hole) spins in the QDM and be able to electrically tune the orbital state couplings. Here, we demonstrate the sequential optical charging of a single QDM with two electron spins while simultaneously maintaining the ability to widely tune orbital couplings using static electric fields and optically drive the system for quantum light generation. We optically prepare one- and two-spin states, initialize via optical pumping and explore orbital and spin relaxation dynamics for one and two-spin states as a function of the energy detuning and hybridization of orbital states. For two-spin states, remarkably long S-T relaxation times are observed extending beyond $\sim 100\mu s$ with strong dependence on the relative energy of ground and excited two-spin states. Qualitative agreement is observed with $\mathbf{k \cdot p}$ calculations of phonon-mediated spin-relaxation. Our results provide new quantitative understanding of the dynamics of one and two-spin states and confirm their suitability of QDMs for creating multidimensional photonic cluster states by exploiting tunable spin-spin exchange couplings at zero magnetic fields combined with optical driving.

cond-mat.mes-hall↗

arXiv2026

Zero-phonon line emission of single photon emitters in helium-ion treated MoS$_2$

We explore the zero-phonon line of single photon emitters in helium-ion treated monolayer MoS$_2$, which are currently understood in terms of single sulfur-site vacancies. By comparing the linewidths of the zero-phonon line as extracted directly from optical spectra with values inferred from the first-order autocorrelation function of the photoluminescence, we quantify bounds of the homogeneous broadening and of phonon-assisted contributions. The results are discussed in terms of both the independent boson model and ab-initio results as computed from GW and Bethe-Salpeter equation approximations.

cond-mat.mes-hall↗

arXiv2026

Electric-current control of anomalous Hall effect

We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe2/Fe3GeTe2 (FGT) stack. Applying a current through Td-WTe2 leads to a giant modulation of the AHE of the adjacent FGT layer, with the relative change of the AHE conductivity exceeding 180%. Control experiments show that i) the observed effect is absent in pure FGT, ii) the modulation weakens in thicker FGT films, confirming its interfacial origin, and iii) the modulation peaks for bilayer WTe2, indicating that the Berry-curvature dipole (BCD) plays the dominant role in the modulation. We propose that the charge current I generates an out-of-plane magnetization Mz via BCD in WTe2 and Mz modifies the exchange splitting of FGT via the inverse magnetic proximity effect, thereby altering its Berry curvature and nontrivially influencing the AHE. The demonstrated method of AHE control offers new possibilities for magnetism control, i.e., for the study of AHE-transistors as well as electric-current control of quantum magnets, especially magnetic insulators.

cond-mat.mes-hall↗

arXiv2025

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.

cond-mat.mes-hall↗

arXiv2025

Toward single-photon detection with superconducting niobium diselenide nanowires

We present superconducting nanowire single-photon detectors (SNSPDs) based on few-layer NbSe$_2$ fully encapsulated with hexagonal boron nitride (hBN), demonstrating single-photon sensitivity. Our fabrication process preserves the superconducting properties of NbSe$_2$ in nanowires, as confirmed by low-temperature transport measurements that show a critical temperature of $T_c \approx 6.5$ K, comparable to the reported values for unpatterned sheets, and it maintains a contact resistance of $\sim 50 \, \Omega$ at $T = 4$ K. Meandered NbSe$_2$ nanowires exhibit a responsivity of up to $4.9 \times 10^4$ V/W over a spectral range of 650-1550 nm in a closed-cycle cryostat at 4 K, outperforming planar and short-wire devices. The devices achieve a $1/e$ recovery time of $\tau = (135 \pm 36)$ ns, system timing jitter of $j_\text{sys} = (1103 \pm 7)$ ps, and detection efficiency of $\sim 0.01\%$ at $0.95I_c$, with a linear increase in detection probability confirming the single-photon operation. Furthermore, measurements under attenuated pulsed laser (1 MHz) indicate a success rate of up to $33\%$ in detecting individual optical pulses, establishing the platform as a promising candidate for developing efficient single-photon detectors.

physics.optics↗

arXiv2024

Spectrally resolved far-field emission pattern of single photon emitters in MoS2

We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab initio theory, but they have never been resolved in luminescence experiments because of their small amplitude. We reveal the lines by their dependence as a function of the photon energy and momentum as measured in the back focal plane of the optical circuitry. The agreement between theory and experiment suggests that the defect states interact strongly within the Brillouin zone.

cond-mat.mes-hall↗

arXiv2023

Gate-based protocol simulations for quantum repeaters using quantum-dot molecules in switchable electric fields

Electrically controllable quantum-dot molecules (QDMs) are a promising platform for deterministic entanglement generation and, as such, a resource for quantum-repeater networks. We develop a microscopic open-quantum-systems approach based on a time-dependent Bloch-Redfield equation to model the generation of entangled spin states with high fidelity. The state preparation is a crucial step in a protocol for deterministic entangled-photon-pair generation that we propose for quantum repeater applications. Our theory takes into account the quantum-dot molecules' electronic properties that are controlled by time-dependent electric fields as well as dissipation due to electron-phonon interaction. We quantify the transition between adiabatic and non-adiabatic regimes, which provides insights into the dynamics of adiabatic control of QDM charge states in the presence of dissipative processes. From this, we infer the maximum speed of entangled-state preparation under different experimental conditions, which serves as a first step towards simulation of attainable entangled photon-pair generation rates. The developed formalism opens the possibility for device-realistic descriptions of repeater protocol implementations.

quant-ph↗

arXiv2021

Efficient optomechanical mode-shape mapping of micromechanical devices

We demonstrate a method to optically map multiple modes of mechanical structures simultaneously. The fast and robust method, based on a modified phase-lock-loop, is demonstrated on a silicon nitride membrane and compared with three different approaches. Line traces and two-dimensional maps of different modes are acquired. The high quality enables us to determine the weights of individual contributions in superpositions of degenerate modes.

physics.app-ph↗

arXiv2015

Towards on-chip generation, routing and detection of non-classical light

We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance uorescence on-chip with the integrated superconducting single photon detector.

cond-mat.mes-hall↗

arXiv2014

On-chip generation, routing and detection of quantum light

Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales $\geq 1$ mm via GaAs ridge waveguides and in-situ detection using evanescently coupled integrated NbN superconducting single photon detectors fabricated on the same chip. By temporally filtering the time-resolved luminescence signal stemming from single, resonantly excited quantum dots we use the prototypical quantum optical circuit to perform time-resolved excitation spectroscopy on single dots and demonstrate resonant fluorescence with a line-width of $10 \pm 1 \ \mu$eV; key elements needed for the use of single photons in prototypical quantum photonic circuits.

cond-mat.mes-hall↗

arXiv2013

Emergence of photoswitchable states in a graphene-azobenzene-Au platform

The perfect transmission of charge carriers through potential barriers in graphene (Klein tunneling) is a direct consequence of the Dirac equation that governs the low-energy carrier dynamics. As a result, localized states do not exist in unpatterned graphene, but quasi-bound states \emph{can} occur for potentials with closed integrable dynamics. Here, we report the observation of resonance states in photo-switchable self-assembled molecular(SAM)-graphene hybrid. Conductive AFM measurements performed at room temperature reveal strong current resonances, the strength of which can be reversibly gated \textit{on-} and \textit{off-} by optically switching the molecular conformation of the mSAM. Comparisons of the voltage separation between current resonances ($\sim 70$--$120$ mV) with solutions of the Dirac equation indicate that the radius of the gating potential is $\sim 7 \pm 2$ nm with a strength $\geq 0.5$ eV. Our results and methods might provide a route toward \emph{optically programmable} carrier dynamics and transport in graphene nano-materials.

cond-mat.mtrl-sci↗

arXiv2012

Optimisation of NbN thin films on GaAs substrates for in-situ single photon detection in structured photonic devices

We prepare NbN thin films by DC magnetron sputtering on [100] GaAs substrates, optimise their quality and demonstrate their use for efficient single photon detection in the near-infrared. The interrelation between the Nb:N content, growth temperature and crystal quality is established for 4-22nm thick films. Optimised films exhibit a superconducting critical temperature of 12.6\pm0.2K for a film thickness of 22\pm0.5nm and 10.2\pm0.2K for 4\pm0.5nm thick films. The optimum growth temperature is shown to be ~475°C reflecting a trade-off between enhanced surface diffusion, which improves the crystal quality, and arsenic evaporation from the GaAs substrate. Analysis of the elemental composition of the films provides strong evidence that the δ-phase of NbN is formed in optimised samples, controlled primarily via the nitrogen partial pressure during growth. By patterning optimum 4nm and 22nm thick films into a 100nm wide, 369μm long nanowire meander using electron beam lithography and reactive ion etching, we fabricated single photon detectors on GaAs substrates. Time-resolved studies of the photo-response, absolute detection efficiency and dark count rates of these detectors as a function of the bias current reveal maximum single photon detection efficiencies as high as 21\pm2% at 4.3\pm0.1K with ~50k dark counts per second for bias currents of 98%Ic at a wavelength of 950nm. As expected, similar detectors fabricated from 22nm thick films exhibit much lower efficiencies (0.004%) with very low dark count rates <=3cps. The maximum lateral extension of a photo-generated hotspot is estimated to be 30\pm8nm, clearly identifying the low detection efficiency and dark count rate of the thick film detectors as arising from hotspot cooling via the heat reservoir provided by the NbN film.

cond-mat.supr-con↗

arXiv2009

Resolution of the mystery of counter-intuitive photon correlations in far off-resonance emission from a quantum dot-cavity system

Cavity quantum-electrodynamics experiments using an atom coupled to a single radiation-field mode have played a central role in testing foundations of quantum mechanics, thus motivating solid-state implementations using single quantum dots coupled to monolithic nano-cavities. In stark contrast to their atom based counterparts, the latter experiments revealed strong cavity emission, even when the quantum dot is far off resonance. Here we present experimental and theoretical results demonstrating that this effect arises from the mesoscopic nature of quantum dot confinement, ensuring the presence of a quasi-continuum of transitions between excited quantum dot states that are enhanced by the cavity mode. Our model fully explains photon correlation measurements demonstrating that photons emitted at the cavity frequency are essentially uncorrelated with each other even though they are generated by a single quantum dot.

cond-mat.mes-hall↗