arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 19 recordsLinked to original sources

arXiv2026

Autonomous Quantum Transport Measurements of 2D Semiconductors by an AI Agent

Artificial-intelligence (AI) agents are beginning to enter experimental laboratories, automating experiments and accelerating scientific discovery. Herein, we introduce an AI-driven workflow in which an AI agent performs multi-step, multi-day quantum transport measurements end-to-end. Specifically, given brief instructions, the agent starts by planning the multi-step measurements, then safely operates the cryogenic instruments, analyzes the data, and concludes with a final report. We demonstrate this AI workflow on multiple monolayer and bilayer MoS2 devices. Through autonomous measurement campaigns lasting up to six days, the agent determined the conduction-band spin-orbit coupling energy in monolayer MoS2, and mapped a layer- and valley-resolved phase diagram in bilayer MoS2. This experimental workflow is implemented through the FermiLink agent harness, which emphasizes instrumental safety and the reliability of the measurement and analysis. The framework is general and can be readily adapted to other types of experiments, representing a step toward self-driving laboratories.

cond-mat.mes-hall↗

arXiv2026

Observation of Kondo Effect in Rhombohedral Graphene Superlattices

Kondo effect in strongly correlated systems arises from the antiferromagnetic coupling between itinerant conduction electrons and localized magnetic moments, giving rise to a variety of exotic quantum phenomena. Two-dimensional moiré superlattice systems provide a highly tunable platform featuring topological flat bands, where Wannier orbitals are spatially confined by the periodic moiré potential and serve as localized magnetic moments, enabling the observable Kondo effect. Here we experimentally demonstrate Kondo interactions in hexalayer rhombohedral graphene moiré superlattices through magneto-transport and temperature-dependent measurements. With increasing magnetic field, the magnetoresistance exhibits an increase-decrease transition across a critical field B_c, while the Hall resistance R_xy undergoes a sign reversal near B_c. Moreover, as temperature decreases, the longitudinal resistance R_xx first increases logarithmically and then decreases following a T^2 behavior, indicating a transition to heavy fermion liquid. These behaviors can be consistently explained by the breakdown of Kondo singlets induced by either magnetic field or temperature, which liberates carriers previously bound to localized moments, thereby enhancing conductivity and altering the dominant carrier type. Furthermore, our results demonstrate that the Kondo interaction can be continuously tuned by both carrier density n and displacement electric field D, and suggest the emergence of a Kondo insulating state. Our findings provide deep insight into the Kondo effect in moiré engineered flat-band systems, paving the path for exploring exotic correlated quantum phases.

cond-mat.mes-hall↗

arXiv2026

Electrically reconfigurable dipolar polaritons with highly tunable nonlinearity in a homobilayer microcavity

Active control over optical nonlinearity in solid-state systems is central to unlocking exotic many-body phenomena and photonic devices. While exciton-polaritons in transition metal dichalcogenides (TMDs) offer a promising platform, their practical utility is impeded by fixed interactions and a trade-off between nonlinearity and oscillator strength. Here, we report electrically tunable dipolar polaritons in a dual-gated bilayer MoS2 microcavity, demonstrating in situ reshaping of the dispersion and modulation of the light-matter coupling strength via the quantum-confined Stark effect. Crucially, this electrical control yields a seven-fold enhancement of the polariton-polariton interaction strength. This enhancement arises from the combined tuning of the effective exciton-exciton interaction and the excitonic Hopfield coefficient. In addition, electrostatic doping provides an independent knob to continuously drive a strong-to-weak coupling crossover. Our findings establish dual-gated TMD homobilayer as a versatile platform for on-chip, dynamically reconfigurable nonlinear light-matter physics.

physics.optics↗

arXiv2026

Super-resolution Control of Individual Two-dimensional Quantum Emitters

Localized interlayer excitons in semiconducting transition-metal dichalcogenide heterobilayers are quantum emitters with a static electric dipole moment, making them excellent nanoscale charge sensors to probe correlated quantum phases in a proximal layer. These emitters are electrically tunable and inherit spin-valley selection rules, yet their deterministic spatial control remains challenging due to subwavelength confinement. Here, we present a platform that combines cryogenic optical spectroscopy with scanning probe microscopy to investigate trapped interlayer excitons in MoSe$_2$/WSe$_2$ bilayers. By exploiting tip-induced local Stark shift, we achieve super-resolution of emitters separated by a few tens of nanometers and demonstrate deterministic control of individual charge states, including trion formation. Time-resolved measurements reveal tip-induced modification of the electromagnetic vacuum around individual emitters, and thus control of their radiative emission. Our multi-point charge sensing platform with optical readout is particularly well-suited for future study of fractionalization and anyon dynamics in semiconducting fractional Chern insulators.

cond-mat.mes-hall↗

arXiv2026

Electrical Probing of Dark Excitons through Microwave Permittivity

Excitons in atomically thin semiconductors are almost always probed through their optical signatures, because the short lifetimes of these transient quasiparticles are generally assumed to preclude electrical detection. Here we show that photoexcited excitons in monolayer tungsten disulfide produce a large, optically tunable permittivity at gigahertz frequencies, and that the effect provides a contact-free electrical route to imaging dark excitons at the nanoscale. Using laser-illuminated microwave impedance microscopy, we find that high-purity encapsulated flakes exhibit a purely dielectric response resonant with the exciton spectrum, whereas defect-rich samples are governed by conventional photoconductivity. Spatial mapping of diffusion and sublinear power dependence identify long-lived dark excitons as the dominant contributors, and first-principles modelling of exciton polarizability reproduces the measured susceptibility. Our results establish excitons as optically tunable dielectric elements and introduce microwave microscopy as a direct electrical probe of dark-exciton transport with sub-100 nm resolution.

cond-mat.mes-hall↗

arXiv2026

Efficient creation of shallow NV$^-$ ensembles by high-angle ion implantation

Negatively charged nitrogen-vacancy (NV$^-$) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV$^-$ centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV$^-$ centers. By implanting $^{15}$N ions at angles exceeding 60$^\circ$, we achieve high NV$^-$ yields approaching 10% with effective NV$^-$ depths below 10 nm. These yields are significantly higher than those typically reported for shallow NV$^-$ creation. The enhanced NV$^-$ yield is consistent with an increased vacancy-to-nitrogen ratio in the near-surface region, which is expected to promote NV formation during annealing. The created NV$^-$ ensembles show coherence properties comparable to those of single shallow NV$^-$ centers at similar depths, and allow detection of nuclear spins in van der Waals materials attached to the diamond surface. Our results establish geometric control of ion implantation as a simple and broadly applicable approach to engineer shallow vacancy-related quantum defects.

quant-ph↗

arXiv2026

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph↗

arXiv2026

Spatially resolved quantum magnetometry and stray-field reconstruction of permalloy microdisks using boron-vacancy centers in hexagonal boron nitride

Transferable hexagonal boron nitride (hBN) hosting negatively charged boron-vacancy (VB$^{-}$) spin defects offers a versatile platform for integrated quantum magnetometry, yet quantitative imaging of magnetic microstructures remains challenging. Here, we integrate a transferred hBN flake with a 4 $μ$m-diameter permalloy (Py = Ni${81}$Fe${19}$) microdisk and perform spatially resolved optically detected magnetic resonance measurements at room temperature. An applied in-plane magnetic field distorts the vortex-state magnetization, generating edge-localized magnetic surface charges and pronounced stray-field signatures at opposite disk edges. By referencing each pixel to its local zero-field splitting and correcting for a residual out-of-plane bias field, we quantitatively reconstruct the out-of-plane stray-field distribution, revealing peak fields of approximately 11.2 mT. An edge-charge model reproduces the spatial distribution and amplitude of the reconstructed field, linking the ODMR response to the field-driven evolution of the vortex state. These results establish transferred hBN VB$^{-}$ sensors for quantitative magnetometry of magnetic microstructures.

cond-mat.mes-hall↗

arXiv2026

Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield

Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.

cond-mat.mtrl-sci↗

arXiv2026

An All-van-der-Waals Qubit

Advances in solid-state physics, materials science, and device engineering have accelerated the development of superconducting qubits. Among emerging platforms, van der Waals (vdW) materials and their heterostructures are potentially attractive building blocks for quantum devices, yet their realization in qubit architectures remains largely underexplored. Here we report an all-vdW superconducting qubit based on a NbSe$_2$-hBN-NbSe$_2$ junction, in which a thin hBN layer simultaneously provides Josephson coupling and capacitive shunting between two NbSe$_2$ islands, forming a "merged-element" transmon. Temporal characterization using circuit quantum electrodynamics (cQED) techniques yields an average energy-relaxation time $T_{1,\mathrm{avg}} = 55 ~μs$, Hahn-echo coherence time $T_{2\mathrm{E},\mathrm{avg}} = 21 ~μs$, and Ramsey coherence time $T_{2\mathrm{R},\mathrm{avg}} = 1.9~μs$. The relatively low Ramsey time is primarily attributable to an enhanced sensitivity to charge noise consistent with the realized device parameters and not a fundamental limitation. These results show that lumped-element superconducting qubits based on vdW heterostructures can achieve coherence times comparable to those of conventional Al-AlO$_\mathrm{x}$-Al qubits, while offering a reduced device footprint and suppressed stray capacitive coupling.

quant-ph↗

arXiv2026

In-plane and out-of-plane magnetic field driven Josephson diode effect in magic-angle twisted four-layer graphene

The superconducting diode effect offers a powerful probe into the fundamental symmetries of quantum materials. Recent studies on twisted graphene diodes have predominantly focused on bilayer or trilayer systems under out-of-plane magnetic fields. Here, we demonstrate both out-of-plane and in-plane driven Josephson diode effects in a magic-angle twisted four-layer graphene junction, i.e., an even number of layers. We observe the emergence of a diode effect at zero out-of-plane field, tuned by an increasing in-plane magnetic field. This result points to the presence of strong in-plane orbital coupling, which is highly sensitive to the specific layer parity of the structure. Our findings provide experimental insights into the symmetry-breaking mechanisms of even-layer twisted graphene, establishing in-plane magnetic fields as a vital tool for unravelling their microscopic properties.

cond-mat.mes-hall↗

arXiv2026

Probing proximity-induced superconductivity in bilayer graphene using gate-defined quantum dots

Van der Waals heterostructures offer a direct way of combining two-dimensional (2D) materials with different electronic properties, such as 2D semiconductors, metals, and superconductors, in a single device. Bilayer graphene (BLG) is particularly attractive in this context, as its electrically tunable band gap enables local control of tunnel barriers and quantum dots. Here, we realize an all-2D hybrid platform based on BLG proximitized by superconducting NbSe$_2$. Using local electrostatic gates, we define tunnel barriers and quantum dots at different distances from the lateral superconductor-semiconductor interface. The quantum dots serve as local spectroscopic probes of the proximitized BLG channel segment, forming tunable superconductor-quantum dot-normal conductor junction devices. Coulomb blockade and finite-bias spectroscopy reveal a proximity-induced superconducting gap of up to $80\,\mathrm{μeV}$ and allow to track its evolution with increasing distance from the NbSe$_2$ contact. We find that the local density of states remains suppressed over distances exceeding 1 $μ$m, consistent with superconducting proximity through a highly ballistic BLG channel. Our results show that BLG-superconductor hybrids offer a controllable platform where quantum dots and quantum point contacts can be well combined with superconductivity.

cond-mat.mes-hall↗

arXiv2026

Layer- and Field-Dependent Magnetic Order in 2D CrSBr Revealed by Pulsed Nanocalorimetry

Understanding the evolution of magnetic order in the two-dimensional limit remains a central challenge in van der Waals magnets, where thermodynamic measurements are constrained by the femtogram-scale mass of exfoliated flakes. Here, microsecond pulse-heating nanocalorimetry is used to measure the heat capacity and magnetic entropy of CrSBr flakes down to the monolayer limit. The measurements reveal the entropy landscape associated with magnetic ordering, uncovering a decreasing interlayer transition temperature toward the monolayer limit and an entropy-derived effective moment per layer that increases with thickness toward the expected spin-only scale. Thermodynamic anomalies capture a crossover from bulk-like interlayer antiferromagnetism to a regime dominated by intralayer ferromagnetic correlations. A pronounced layer-parity effect further emerges, with odd-layer samples displaying an additional high-temperature contribution associated with uncompensated magnetic layers. Under in-plane magnetic fields applied along the easy axis, antiferromagnetic order is progressively suppressed, allowing extraction of a thickness-dependent characteristic suppression field reflecting weakened interlayer exchange coupling. Entropy analysis further reveals an extended regime of magnetic fluctuations persisting well above the interlayer ordering transition. Together, these results establish nanocalorimetry as a powerful thermodynamic probe of low-dimensional magnetism, providing direct access to magnetic entropy, exchange interactions, and dimensional crossover in atomically thin van der Waals magnets.

cond-mat.mtrl-sci↗

arXiv2026

Spin-polarized Superconductivity and High-Chern Insulators in Twisted Rhombohedral Graphene Family

Rhombohedral multilayer graphene has emerged as a remarkably versatile platform for exploring strong correlation driven quantum states arising from low-energy topological flat bands. When reconstructed by the moire superlattice, these bands host a wide range of emergent novel states, including integer and fractional Chern insulators and unconventional superconductivity. Here, we firstly report the simultaneous emergence of widespread spin polarized SC and high Chern insulators in twisted bilayer multilayer RMG system 2+n where n=4,5,6. The SC states in 2+n system exhibit different responses to the in plane magnetic field, with SC being suppressed, enhanced and induced by in plane magnetic field . The latter two are consistent with spin-triplet pairing. Along with SC, angle and layer dependent HCIs with tunable Chern numbers emerge. Moreover, the fractional high Chern insulator in the system survives under high in plane magnetic field which can induce SC in the same device. Our work not only establishs twisted bilayer multilayer rhombohedral graphene as a unified platform for studying SC and high Chern insulators, but also opens a pathway towards multiple copropagating chiral Majorana channels by coupling spin-polarized SC to high Chern insulators.

cond-mat.mes-hall↗

arXiv2026

Visualizing Chiral Edge Modes in Twisted Cuprate Superconductors via Scanning-Probe Quantum Sensing

Recently, unconventional superconductivity hosted by twisted van der Waals (vdW) heterostructures has received immense interest due to the exotic pairing symmetry, electronic interactions and nontrivial topological nature that are naturally relevant to the fast-advancing quantum technologies. Here, we report scanning-probe quantum sensing of nanoscale electromagnetic behaviors of twisted vdW cuprate superconductors. Using single-spin relaxometry, we directly visualize edge modes spontaneously formed in twisted Bi2Sr2CaCu2O8+x (BSCCO). By investigating temperature dependent variations of edge-state-induced quantum spin relaxation, we experimentally evaluate the magnitude of nontrivial topological band gap opened at nodal points in twisted BSCCO and its critical temperature behaviors under different twist angles. We further observe alternating chiral domains defined by edge modes, exploring experimental signatures of in-plane magnetic field-induced topology in 45° twisted BSCCO. Our results advance the current understanding of twisted vdW nodal superconductors, presenting an appealing high-temperature topological superconducting material platform for cutting-edge quantum innovation.

cond-mat.mes-hall↗

arXiv2026

Non-universal localization transition in the quantum Hall effect probed through broken-symmetry states of graphene

The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal character is not systematically observed in experiments, including very recent ones in extremely clean devices. Here we explore this non-universality by systematically measuring the localization length in broken-symmetry quantum Hall states of graphene. Depending on the nature and gap size of these states, we observe differences of up to a tenfold in the minimum localization length, accompanied by clear deviations from universal scaling. Our results, as well as the previously observed non-universality, are fully captured by a simple picture based on the co-existence of localized states from two successive sub-Landau levels.

cond-mat.mes-hall↗

arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗

arXiv2026

Hilbert-space selected switch of helical edges in an artificial quantum Hall insulator

Quantum Hall effects (QHE) host one-dimensional topologically-protected edge channels, which can serve as an essential ingredient in exotic quantum electronic systems. Yet the manual reconstruction of Landau-level topology, by electrostatic confinement or symmetry breaking, remains experimentally challenging. Here, we show that interfacial charge transfer in between CrOCl and large-angle twisted bilayer graphene offsets the two otherwise decoupled Dirac Landau-level ladders in each graphene layer, creating a new sequence of composite filling configurations. At charge neutrality, the composited $(+2,-2)$ state involves only the zeroth Landau levels and becomes fully insulating, with longitudinal resistance reaching the G$Ω$ regime. By contrast, higher composite zero-filling quantum Hall states, including $(+6,-6)$ and $(+10,-10)$, retain counter-propagating helical edge channels and exhibit pronounced non-local transport, reaching up to $50\%$ of the local response. We attribute such switching-behavior to the Landau-spinor Hilbert space -- as the filling is reduced from $(+6,-6)$ to $(+2,-2)$, the orthogonal $N=\pm1$ orbital components are removed, eliminating the edge-compatible channel and gapping both bulk and boundary transport. The interaction nature of the observed gapped sates was further examined both experimentally and theoretically. Our results suggest that charge transfer provides a direct route to engineer artificial quantum Hall insulators, opening possibilities for wavefunction-selective control of helical edge modes.

cond-mat.mes-hall↗