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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 379 records · Page 21Linked to original sources

Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures

Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors.

cond-mat.mes-hall↗

Tunable Kondo effect in a bilayer graphene quantum channel

The interaction between itinerant electrons and localized spins is key to a wide range of electronic phenomena. Of particular interest is the regime where the interacting electrons exhibit both spin and valley degeneracy, resulting in SU(4) Kondo physics. However, this regime is challenging to realize in typical mesoscopic systems because it requires a strong interaction between electrons, resulting in a Kondo temperature ($T_\mathrm{K}$) significantly larger than the spin and valley splittings. Here, we present conductance measurements of a quantum point contact (QPC) in bilayer graphene (BLG). Beyond the expected quantized conductance plateaus, which reflect spin and valley degeneracy, we observe an additional subband, known as `0.7 anomaly' exhibiting signatures of Kondo physics and a $T_\mathrm{K}$ ranging from approximately 0.5 up to 2.4 K at zero magnetic field, corresponding to Kondo energies between 40 and 200 $μ$eV. Given that the spin-orbit splitting in BLG is between 40 and 80 $μ$eV, we argue that these results are consistent with a transition between four-fold degenerate SU(4) and two-fold degenerate spin-valley locked SU(2) Kondo effects. Furthermore, we break the valley degeneracy of the lowest subband by an out-of-plane magnetic field and show that Kondo signatures remain present, indicating a transition from SU(4) to a valley-polarized SU(2) Kondo effect, and showing the versatility of BLG QPCs for exploring many-body effects.

cond-mat.mes-hall↗

Flat band surface state superconductivity in thick rhombohedral graphene

Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the electronic structure of thick rhombohedral graphene features flat-band surface states even in the infinite layer limit. Here, we use layer resolved capacitance measurements to directly detect these surface states for $N\approx 13$ layer rhombohedral graphene devices. Using electronic transport and local magnetometry, we find that the surface states host a variety of ferromagnetic phases, including both valley imbalanced quarter metals and broad regimes of density in which the system spontaneously spin polarizes. We observe several superconducting states localized to a single surface state. These superconductors appear on the unpolarized side of the density-tuned spin transitions, and show strong violations of the Pauli limit consistent with a dominant attractive interaction in the spin-triplet, valley-singlet pairing channel. In contrast to previous studies of rhombohedral multilayers, however, we find that superconductivity can persist to zero displacement field where the system is inversion symmetric. Energetic considerations suggest that superconductivity in this regime is described by the existence of two independent surface superconductors coupled via tunneling through the insulating single crystal graphite bulk.

cond-mat.supr-con↗

Building 3D superconductor-based Josephson junctions using a via transfer approach

The coupling of superconductivity to unconventional materials may lead to novel quantum states and potential applications. Controlling the quality of the superconductor-normal metal interface is of crucial importance to the understanding and engineering of the superconducting proximity effect. In many cases, conventional lithography-based deposition methods introduce undesirable effects. Using the concept of via contact and dry transfer, we have constructed smooth, van der Waals-like contact between 3D superconducting NbN/Pd and graphene with low contact resistance of approximately 130 $Ω\cdot μm$. Gate-tunable supercurrent, Fraunhofer pattern, and Andreev reflections are observed, the properties of which can be understood using an induced superconducting gap $Δ$' in this planar contact geometry. We discuss potential mechanisms impacting the magnitude of $Δ$' and suggest ways of further increasing the proximity coupling. This gentle, lithography-free contacting method can be applied to air- and damage-sensitive surfaces to engineer novel superconducting heterostructures.

cond-mat.mes-hall↗

Nature of 2D XY antiferromagnetism in a van der Waals monolayer

Two-dimensional antiferromagnetism has long attracted significant interest in many areas of condensed matter physics, but only recently has experimental exploration become feasible due to the isolation of van der Waals antiferromagnetic monolayers. Probing the magnetic phase diagram of these monolayers remains however challenging because established experimental techniques often lack the required sensitivity. Here, we investigate antiferromagnetism in atomically thin van der Waals magnet NiPS3 using magnetotransport measurements in field-effect transistor devices. Temperature-dependent conductance and magnetoresistance data reveal a distinct magnetic behavior in monolayers as compared to thicker samples. While bilayer and multilayer NiPS3 exhibit a single magnetic phase transition into a zig-zag antiferromagnetic state driven by uniaxial anisotropy, monolayer NiPS3 undergoes two magnetic transitions, with a low-temperature phase governed by in-plane hexagonal magnetic anisotropy. The experimentally constructed phase diagram for monolayer NiPS3 matches theoretical predictions from the six-state clock and 2D-XY models incorporating hexagonal anisotropy.

cond-mat.mes-hall↗

Quantum Transport Spectroscopy of Pseudomagnetic Field in Graphene

Nonuniform strain in graphene acts as a valley-dependent gauge field, generating pseudomagnetic fields (PMFs) that mimic real magnetic fields but preserve global time-reversal symmetry. While local probes have visualized such fields, their quantitative detection via macroscopic transport has remained elusive. Here, we demonstrate that high-mobility graphene exhibits distinct beating patterns in Shubnikov-de Haas oscillations, arising from valley-resolved Landau quantization under different effective magnetic fields. Systematic analysis of these beats reveals universal quadratic and linear scaling of the node carrier density and Landau level filling factor with the applied magnetic field, enabling the extraction of PMFs as small as a few millitesla. Our results establish quantum oscillation spectroscopy as a robust and broadly applicable probe of strain-induced gauge fields in Dirac materials, opening avenues for mechanically tunable valleytronic and straintronic devices.

cond-mat.mes-hall↗

Resonance fluorescence and indistinguishable photons from a coherently driven B centre in hBN

Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of integration offered by the host two-dimensional material. In particular, the B centres, with their narrow linewidth, low wavelength spread and controllable positioning, have raised a particular interest for integrated quantum photonics. However, to date, either their excitation or their detection has been performed non-resonantly due to the difficulty of rejecting the backreflected laser light at the same wavelength, thereby preventing to take full benefit from their high coherence in quantum protocols. Here, we make use of a narrow-linewidth emitter integrated in a hybrid metal-dielectric structure to implement crossed-polarisation laser rejection. This allows us to observe resonantly scattered photons, with associated experimental signatures of optical coherence in both continuous-wave (cw) and pulsed regimes, respectively the Mollow triplet and Hong-Ou-Mandel interference from zero-phonon-line emission. The measured two-photon interference visibility of 0.93 +/- 0.21 and 0.92 +/- 0.26 we measured for two emitters demonstrate the potential of B centres in hBN for applications to integrated quantum information.

physics.optics↗

Signatures of magnetism in zigzag graphene nanoribbon embedded in h-BN lattice

Zigzag edges of graphene have long been predicted to exhibit magnetic electronic state near the Fermi level, which can cause spin-related phenomena and offer unique potentials for graphene-based spintronics. However, the magnetic conduction channels along these edges have yet been reported experimentally. Here, we report the observation on signatures of magnetism in zigzag graphene nanoribbons (zGNRs) embedded in hexagonal boron nitride (h-BN). The in-plane bonding with BN can stabilize the edges of zGNRs, and thus enable a direct probing of the intrinsic magnetism. Firstly, the presence of magnetism of a zGNR was confirmed by scanning NV center microscopy. And then, zGNR was fabricated into a transistor with a width of ~9 nm wide and a channel length of sub-50 nm. By performing magneto-transport measurements, Fabry-Pérot interference patterns were observed in the transistor at 4 Kelvin, which indicates a coherent transport through the channel. A large magnetoresistance of ~175 Ω, corresponding to a ratio of ~1.3 %, was observed at the same temperature. More importantly, such magneto-transport signal is highly anisotropic on the magnetic field direction, and its appearance extends well above room temperature. All these evidences corroborate the existence of robust magnetic ordering in the edge state of zGNR. The findings on zGNR embedded in h-BN provide an effective platform for the future exploration of graphene-based spintronic devices.

cond-mat.mes-hall↗

Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices

Two-dimensional moiré superlattices have been extensively studied, and a variety of correlated phenomena have been observed. However, their lower-dimensional counterpart, one-dimensional (1D) moiré superlattices, remain largely unexplored. Electrons in 1D are generally described by Luttinger liquid theory, with universal scaling relations depending only on the Luttinger parameter g. In particular, at half-filling, Umklapp scattering plays a crucial role, as it can significantly change the conductance-temperature scaling relation and lead to Mott insulators. However, this prediction has never been observed since doping an empty band to half-filling was extremely difficult. Here, we show that the marriage of moiré superlattices and 1D electrons makes it possible to study the Luttinger liquid in an exceptionally wide filling region simply by electrical gating. We perform transport measurements on 1D moiré superlattices of carbon nanotubes on hexagonal boron nitride (hBN) substrates, and observe correlated insulating states at 1/4 and 1/2 fillings of the superlattice mini-band, where Umklapp scattering becomes dominant. We also observe a T-linear conductance at these commensurate fillings over a range of temperatures. Strikingly, the T-linear conductance leads to a strongly suppressed Luttinger parameter, suggesting a state of extreme correlation.

cond-mat.str-el↗

Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding

Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled interlayer sliding in bilayer graphene induces Berry curvature reversals, leading to topological states confined within a one-dimensional moiré channel. We experimentally realize interlayer sliding by bending the bilayer graphene geometry across a nanoridge. Systematic electronic transport measurements reveal topological valley transport when the Fermi energy resides within the band gap, consistent with theoretical predictions of eight topological channels. Our findings establish interlayer sliding as a powerful tool for tuning the electronic properties of bilayer graphene and underscore its potential for broad application across 2D material systems.

cond-mat.mes-hall↗

Visualizing interaction-driven restructuring of quantum Hall edge states

Many topological phases host gapless boundary modes that can be dramatically modified by electronic interactions. Even for the long-studied edge modes of quantum Hall phases, forming at the boundaries of two-dimensional (2D) electron systems, the nature of such interaction-induced changes has been elusive. Despite advances made using local probes, key experimental challenges persist: the lack of direct information about the internal structure of edge states on microscopic scales, and complications from edge disorder. Here, we use scanning tunneling microscopy (STM) to image pristine electrostatically defined quantum Hall edge states in graphene with high spatial resolution and demonstrate how correlations dictate the structures of edge channels on both magnetic and atomic length scales. For integer quantum Hall states in the zeroth Landau level, we show that interactions renormalize the edge velocity, dictate the spatial profile for copropagating modes, and induce unexpected edge valley polarization that differ from those of the bulk. While some of our findings can be understood by mean-field theory, others show breakdown of this picture, highlighting the roles of edge fluctuations and inter-channel couplings. We also extend our measurements to spatially resolve the edge state of fractional quantum Hall phases and detect spectroscopic signatures of interactions in this chiral Luttinger liquid. Our study establishes STM as a promising tool for exploring edge physics of the rapidly expanding 2D topological phases, including newly realized fractional Chern insulators.

cond-mat.mes-hall↗

Ten-valley excitonic complexes in charge-tunable monolayer WSe$_2$

Excitons dominate the optical response of two-dimensional (2D) semiconductors. Strong interactions produce peculiar excitonic complexes, which provide a testing ground for exciton and quantum many-body theories. Here, we report a hitherto unobserved many-body exciton that emerges upon filling both the K and Q valleys of WSe$_2$. We optically probe the exciton landscape using charge-tunable devices with unusually thin dielectrics that facilitate doping up to several $10^{13}$ cm$^{-2}$. We observe the emergence of the thermodynamically stable complex when 10 valleys are electrostatically filled. We gain insight into its physics using magneto-optical measurements. Our results are well-described by a model where the number of distinguishable Fermi seas interacting with the photoexcited electron-hole pair defines the complex's behavior. In addition to expanding the repertoire of excitons in 2D semiconductors, this complex could probe the limit of exciton models and answer open questions about screened Coulomb interactions in 2D semiconductors.

cond-mat.mes-hall↗

Emergent electronic insulating states in a one-dimensional moiré superlattice

Two-dimensional (2D) van der Waals (vdW) moiré superlattices have provided a powerful knob to engineer a plethora of new quantum states. However, extending such moiré engineering to one-dimensional (1D) vdW systems has remained challenging. Here we report the moiré-engineered electronic insulating states in a new 1D moiré superlattice, by crystallographically aligning an armchair single-walled carbon nanotube (SWNT) to 2D hexagonal boron nitride (hBN) substrate. Remarkably, we observe the emergence of pronounced insulating states at charge neutrality point (CNP), full and half moiré fillings in lattice-aligned armchair SWNT/hBN heterostructures by low-temperature electrical transport measurements. In strong contrast, armchair SWNT devices without hBN alignment do not show any of these insulating behaviors, providing compelling evidence for the significant 1D moiré effect. Our density functional theory (DFT) and tight-binding calculations reveal that synergetic nanotube partial flattening and in-plane lattice reconstruction at 1D moiré interface expand the most stable AB' stacking regions (carbon on top of boron) and open sizable band gaps at both CNP and full moiré fillings at the single-particle level. Our one-body theory predicts no band gaps at half moiré fillings, suggesting that electron correlation and/or electron-phonon interaction may give rise to these emergent insulating behaviors in our 1D moiré systems. Our work establishes a new and definite moiré engineering route for 1D vdW materials and opens an exciting avenue for exploring interaction-induced quantum phases in 1D.

cond-mat.mes-hall↗

AC magnetometry of van der Waals magnets using ultrasensitive Graphene Hall sensors

Probing the dynamical magnetic properties of two-dimensional (2D) materials requires sensitive techniques capable of detecting small magnetic fields from nanoscale samples. We demonstrate quantitative AC and DC magnetometry of a ferromagnetic Fe3-xGeTe2 nanoflakes using ultrasensitive graphene Hall sensors. These devices achieve record-low magnetic field detection noise at both cryogenic and room temperature, enabled by hBN encapsulation, low-resistance fluorographene contacts, and a novel fabrication process. We perform quantitative AC susceptibility measurements up to 1 kHz, resolving both real and imaginary components with nanotesla-scale sensitivity and milliradian phase accuracy, the first such measurement in a van der Waals magnet. Our results establish graphene Hall sensors as a powerful and broadly applicable platform for studying magnetic and superconducting phases near the 2D limit.

cond-mat.mtrl-sci↗

Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moiré rhombohedral graphene

Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moiré devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moiré-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moiré-distant regime. Instead, the moiré periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moiré-distant regime. Furthermore, in the moiré-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near ν = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moiré systems.

cond-mat.mes-hall↗

Magnetoelectric Switching of Magnetic Order in Rhombohedral Graphene

A finite Hall conductance under zero magnetic field implies time reversal symmetry (TRS) breaking due to magnetic order. In rhombohedral stacked multilayer graphene, the angular momentum that breaks TRS can result from the orbital degree of freedom at the $K$ and $K'$ valleys. This leads to valley polarization and occupation-dependent anomalous Hall resistance (AHR) due to the chirality in Berry curvature at the valleys. We report magnetoelectric control of orbital magnetic order in crystalline rhombohedral hexalayer graphene (R6G), achieved without the introduction of a moiré superlattice. At moderate displacement fields and low carrier densities, we observe a non-volatile and hysteretic AHR that can be electrically toggled by sweeping either the carrier density or the displacement field. Upon the application of small perpendicular magnetic fields, the system reveals a characteristic double sign reversal of the AHR, indicating a competition between distinct magnetic ground states. This interplay between valley polarization and electric and magnetic field tuning demonstrates the rich multiferroic behavior of R6G. Our findings present crystalline R6G as a minimal, tunable platform for studying symmetry-breaking phases and magnetic order in flat-band systems, offering insights into the coupling between electronic structure and magnetoelectric response.

cond-mat.mes-hall↗

Spin-valley 0.7 anomaly in bilayer graphene/WSe$_2$ quantum point contacts

We report a well-resolved 0.7 conductance anomaly at $G = 0.7\times(2e^2/h)$ in bilayer graphene/WSe$_2$ quantum point contacts. Proximity-enhanced spin-orbit coupling splits the four-fold ground state of bilayer graphene into well-separated spin-valley locked Kramers doublets. The anomaly emerges between these opposite spin-valley states. Despite fundamentally different band structure and wavefunction characteristics, the temperature and bias phenomenology closely mirror GaAs systems. In contrast, the parallel magnetic field response differs significantly, confirming the central role of valley degrees of freedom. This opens new pathways to study valley-exchange correlation physics in regimes inaccessible to conventional semiconductors.

cond-mat.mes-hall↗

High luminescence efficiency of multi-valley excitonic complexes in heavily doped WSe2 monolayer

Monolayers of group-VI transition-metal dichalcogenides (TMDs) are two-dimensional semiconductors that exhibit exceptionally strong light-matter coupling yet typically suffer from low emission quantum yields. In this letter, we investigate the heavily n-doped regime of a WSe$_2$ monolayer and show that multi-particle excitonic complexes produce photoluminescence signals up to two orders of magnitude stronger than in the neutral state. Time-resolved photoluminescence and differential reflectivity measurements reveal that the quantum yield rises with carrier density and exceeds 50% for electron concentrations above 10$^{13}$ cm$^{-2}$. These findings establish TMD monolayers as a platform for exploring excitonic complexes in high-density electron gases and point toward new opportunities for efficient, atomically thin light emitters.

cond-mat.mes-hall↗