arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 415 records · Page 23Linked to original sources

arXiv2025

Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics

Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accounting for both intrinsic relaxation processes and externally driven charge transfer. By modeling non-equilibrium carrier dynamics as a competition between injection and reabsorption rates, we uncover two distinct regimes: one governed by intrinsic, frequency-independent relaxation and another exhibiting frequency-locked behavior where the response is tied to the external drive. This distinction resolves apparent nonvolatile effects and explains loop invariance in floating-gate structures via displacement current-driven charge injection. Our framework predicts the evolution of the hysteresis loop shape, amplitude, and direction across a wide range of driving conditions, offering a versatile tool for interpreting experimental results and guiding the design of next-generation graphene-based electronic systems.

cond-mat.mes-hall↗

arXiv2025

Electronic origin of reorganization energy in interfacial electron transfer

Electron transfer (ET) reactions underpin energy conversion and chemical transformations in both biological and abiological systems. The efficiency of any ET process relies on achieving a desired ET rate within an optimal driving force range. Marcus theory provides a microscopic framework for understanding the activation free energy, and thus the rate, of ET in terms of a key parameter: the reorganization energy. For electrified solid-liquid interfaces, it has long been conventionally understood that only factors in the electrolyte phase are responsible for determining the reorganization energy and the electronic density of states (DOS) of the electrode serves only to dictate the number of thermally accessible channels for ET. Here we show instead that the electrode DOS plays a central role in governing the reorganization energy, far outweighing its conventionally assumed role. Using atomically layered heterostructures, we tune the DOS of graphene and measure outer-sphere ET kinetics. We find the ensuing variation in ET rate arises from strong modulation in a reorganization energy associated with image potential localization in the electrode. This work redefines the traditional paradigm of heterogeneous ET kinetics, revealing a deeper role of the electrode electronic structure in interfacial reactivity.

cond-mat.mtrl-sci↗

arXiv2025

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe

Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy (μ-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the Γ-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.

cond-mat.mtrl-sci↗

arXiv2025

Sliding multiferroicity in hexagonal stacked CrI3

Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply stacking order engineering to create a new type of 2D multiferroics, namely sliding multiferroics, based on polar hexagonal stacked (H-stacked) CrI3. This new stacking order removes structural inversion symmetry and gives rise to room temperature sliding ferroelectricity, as confirmed by Raman spectroscopy, second harmonic generation spectroscopy and electrical transport measurements. Building upon the gate-dependent reflective magnetic circular dichroism, first-principles calculations, and modeling, sliding ferroelectricity is shown to interplay with an emergent interfacial ferromagnetism via interlayer spin-polarized charge transfer. This coupling mechanism results in non-volatile magnetic switching by as low as 0.4V across the H-stacked CrI3. Our demonstration introduces polar stacking order engineering of 2D magnets as a general approach to create non-volatile 2D multiferroics with efficient magnetoelectric coupling, paving the way for low-power electronics and spintronics at the atomically thin limit.

cond-mat.mtrl-sci↗

arXiv2025

Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between Cr$_2$Ge$_2$Te$_6$ electrodes

Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals materials with vastly different electronic band structures enable simultaneous injection of electrons and holes into an optically active material, providing a universal blueprint for light-emitting diodes (LEDs). Efficient modulation of the injection efficiency has previously been demonstrated by creating resonant states within the energy barrier formed by the luminescent material. Here, we present an alternative approach towards resonant tunneling conditions by fabricating tunneling junctions composed entirely from gapped materials: Cr$_2$Ge$_2$Te$_6$ as electrodes, hBN as a tunneling barrier, and monolayer WSe$_2$ as a luminescent medium. The characterization of such LEDs revealed a nonmonotonous evolution of the electroluminescence intensity with the tunneling bias. The dominant role driving the characteristics of the electron tunneling was associated with the relative alignment of the density of states in Cr$_2$Ge$_2$Te$_6$ electrodes. The unique device architecture introduced here presents a universal pathway towards LEDs operating at room temperature with electrically modulated emission intensity.

cond-mat.mtrl-sci↗

arXiv2025

Electrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer

Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.

cond-mat.mes-hall↗

arXiv2025

Extremely high excitonic $g$-factors in 2D crystals by alloy-induced admixing of band states

Monolayers (MLs) of semiconducting transition metal dichalcogenides (\mbox{S-TMDs}) emit light very efficiently and display rich spin-valley physics, with gyromagnetic ($g$-) factors of about -4. Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in Mo$_{x}$W$_{1-x}$Se$_2$ MLs with different Mo and W concentrations. We show that the alloys feature extremely high $g$-factors for neutral excitons, that change gradually with the composition up to reaching values of the order of -10 for $x \approx 0.2$. First-principles calculations corroborate the experimental findings and provide evidence that alloying in S-TMDs results in a non-trivial band structure engineering, being at the origin of the high $g$-factors. The theoretical framework also suggests a higher strain sensitivity of the alloys, making them promising candidates for tailor-made optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene

Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here, we demonstrate a sliding-induced first-order structural phase transition between Bernal and rhombohedral tetralayer graphene driven by gate voltages. Through transport measurement, we observe bistable switching between a Bernal-dominant state and a rhombohedral-Bernal mixed state across a wide space of the gate-voltage phase diagram. The structural phase transition results in nonvolatile switching between a paramagnet and a ferromagnet accompanied by the anomalous Hall effect. The sign reversal of the anomalous Hall effect under opposite displacement fields suggests that it may originate from domain boundaries between the Bernal and rhombohedral regions. Our discovery paves the way for on-demand toggling of quantum phases based on the sliding phase transition of 2D materials and offers a playground to explore unconventional physics at the stacking domain boundaries.

cond-mat.mes-hall↗

arXiv2025

Ferroelectric Control of Interlayer Excitons in 3R-MoS$_{2}$ / MoSe$_{2}$ Heterostructures

We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS$_2$/MoSe$_2$ heterostructures, combining photoluminescence experiments with density functional theory and many-body Green's function calculations. Low-temperature photoluminescence spectroscopy reveals a strong redshift of the interlayer exciton energy with increasing MoS$_2$ layer thickness, attributed to band renormalization and dielectric effects. We observe local variations in exciton energy that correlate with local ferroelectric domain polarization of the 3R-MoS$_2$ layer, showcasing distinct domain-dependent interlayer exciton transition energies. Gate voltage experiments demonstrate that the interlayer exciton energy can be tuned by electrically induced domain switching. These results highlight the potential for interlayer exciton control by local ferroelectric order and establish a foundation for future ferroelectric optoelectronic devices based on van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Strong Correlations and Superconductivity in the Supermoiré Lattice

The supermoiré lattice, arising from the interference of multiple moiré patterns, dramatically reshapes the electronic band structure by introducing new minibands and modifying band dispersion. Concurrently, strong electronic interactions within moiré flat bands lead to the emergence of various correlated states. However, the impact of the supermoiré lattice on the flat band systems with strong interactions remains largely unexplored. Here, we report the existence of the supermoiré lattice in the mirror-symmetry-broken twisted trilayer graphene, elucidating its role in generating mini-flat bands and mini-Dirac bands. Furthermore, we demonstrate interaction-induced symmetry-broken phases in the supermoiré mini-flat bands alongside the cascade of superconductor-insulator transitions enabled by the supermoiré lattice. Our work shows that robust superconductivity can exist in the mirror-symmetry-broken TTG and underscores the significance of the supermoiré lattice as an additional degree of freedom for tuning the electronic properties in twisted multilayer systems, sheds light on the correlated quantum phases such as superconductivity in the original moiré flat bands, and highlights the potential of using the supermoiré lattice to design and simulate novel quantum phases.

cond-mat.str-el↗

arXiv2025

Supersonic flow and hydraulic jump in an electronic de Laval nozzle

In very clean solid-state systems, where carrier-carrier interactions dominate over any other scattering mechanisms, the flow of electrons can be described within a hydrodynamic framework. In these cases, analogues of viscous fluid phenomena have been experimentally observed. However, experimental studies of electron hydrodynamics have so far been limited to the low velocity, linear response regime. At velocities approaching the speed of sound, the electronic fluid is expected to exhibit compressible behaviour where nonlinear effects and discontinuities such as shocks and choked flow have long been predicted. This compressible regime remains unexplored in electronic systems, despite its promise of strongly nonlinear flow phenomena. Here, we demonstrate compressible electron flow in bilayer graphene through an electronic de Laval nozzle, a structure that accelerates charge carriers past the electronic speed of sound, until they slow down suddenly in a shock. Discontinuities in transport measurements and local flattening of potential in Kelvin probe measurements are consistent with a viscous electron shock front and the presence of supersonic electron flow, and are not consistent with Ohmic or ballistic flow. Breaking the sound barrier in electron liquids opens the door for novel, intrinsically nonlinear electronic devices beyond the paradigm of incompressible flow.

cond-mat.mes-hall↗

arXiv2025

Probing Vortex Dynamics in 2D Superconductors with Scanning Quantum Microscope

The visualization of the magnetic responses of a two-dimensional (2D) superconducting material on the nanoscale is a powerful approach to unravel the underlying supercurrent behavior and to investigate critical phenomena in reduced dimensions. In this study, scanning quantum microscopy is utilized to explore the local magnetic response of the 2D superconductor 2H-NbSe2. Our technique enables both static and dynamic sensing of superconducting vortices with high sensitivity and a spatial resolution down to 30 nm, unveiling unexpected phenomena linked to the intrinsic 2D nature of the superconductor, which are challenging to detect with more conventional local probes. Vortices do not arrange in a hexagonal lattice, but form a distorted vortex glass with expanding vortex size. A vortex can exhibit strong local dynamics due to thermal excitation. As the critical temperature is approached, a clear melting of the vortex glass is identified, leading to distinct configurations under different cooling conditions. Vortex fluctuations can also be probed through spin Hahn-echo measurements, which reveal the spin decoherence even well below the critical temperature -- and, intriguingly, enhanced decoherence at lower temperatures. Spatiotemporal microscopy of the magnetic dynamics associated with vortex excitations and fluctuations provides direct evidence of 2D superconducting phenomena at the nanoscale.

cond-mat.supr-con↗

arXiv2025

Quantum oscillations between excitonic and quantum spin Hall insulators in moiré WSe2

Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but experimental studies have been hindered by the availability of tunable materials that can access such a transition. Here, by utilizing the interaction-enhanced g-factor and the flat moiré bands in twisted bilayer WSe2 (tWSe2), we realize tunable electron-like and hole-like Landau levels (LLs) in the opposite valleys of tWSe2 under a perpendicular magnetic field. At half-band-filling, which corresponds to electron-hole charge neutrality, periodic oscillations between QSHIs (for fully filled LLs) and EIs (for half-filled LLs) are observed due to the interplay between the cyclotron energy and the intervalley correlation; QSHIs with up to four pairs of helical edge states can be resolved. We further analyze the effect of Fermi surface nesting on the stability of EIs via electric field-tuning of the moiré band structure. Our results demonstrate a novel QSHI-to-EI topological phase transition and provide a comprehensive understanding of the fermiology of tWSe2.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable chiral spin mode in WSe2/WS2 moiré superlattices

The interplay between many-body and spin-orbit effects (SOC) can lead to novel phenomena in solids. Chiral spin modes (CSM) are collective spin excitations that arise from such interplay and connect states with opposite chirality, which, however, have been rarely observed. Here, we report a gate-tunable CSM that occurs between conduction SOC-split minibands in near-0°-twisted WSe2/WS2 bilayers. This mode manifests as a sharp resonance with giant Raman efficiency in the pseudovector-symmetry channel of the Raman spectra. By varying fillings, the CSM transitions from chiral spin exciton to excitonic polaron. The spin-flip nature is directly confirmed by the Zeeman effect. Moreover, the filling dependence compellingly evidences a charge-transfer insulator at filling of one. Our results demonstrate transition-metal-dichalcogenides moiré superlattices as a fertile platform for exploring exotic low-lying collective excitations.

cond-mat.mes-hall↗

arXiv2025

Bichromatic Moiré Superlattices for Tunable Quadrupolar Trions and Correlated States

Moiré superlattices in transition metal dichalcogenide heterostructures provide a platform to engineer many-body interactions. Here, we realize a bichromatic moiré superlattice in an asymmetric WSe$_2$/WS$_2$/WSe$_2$ heterotrilayer by combining R- and H-stacked bilayers with mismatched moiré wavelengths. This structure hosts fermionic quadrupolar moiré trions -- interlayer excitons bound to an opposite-layer hole -- with vanishing dipole moments. These trions arise from hybridized moiré potentials enabling multiple excitonic orbitals with tunable interlayer coupling, allowing control of excitonic and electronic ground states. We show that an out-of-plane electric field could effectively reshape moiré excitons and interlayer-intralayer electron correlations, driving a transition from interlayer to intralayer Mott states with enhanced Coulomb repulsion. The asymmetric stacking further enriches excitonic selection rules, broadening opportunities for spin-photon engineering. Our results demonstrate bichromatic moiré superlattices as a reconfigurable platform for emergent quantum states, where quadrupolar moiré trion emission may enable coherent and entangled quantum light manipulation.

cond-mat.mes-hall↗

arXiv2025

Quantum Hall Antidot as a Fractional Coulombmeter

The detection of fractionally charged quasiparticles, which arise in the fractional quantum Hall regime, is of fundamental importance for probing their exotic quantum properties. While electronic interferometers have been central to probe their statistical properties, their interpretation is often complicated by bulk-edge interactions. Antidots, potential hills in the quantum Hall regime, are particularly valuable in this context, as they overcome the geometric limitations of conventional designs and act as controlled impurities within a quantum point contact. Furthermore, antidots allow for quasiparticle charge detection through straightforward conductance measurements, replacing the need for more demanding techniques. In this work, we employ a gate-defined bilayer graphene antidot operating in the Coulomb-dominated regime to study quasiparticle tunneling in both integer and fractional quantum Hall states. We show that the gate-voltage period and the oscillation slope directly reveal the charge of the tunneling quasiparticles, providing a practical method to measure fractional charge in graphene. We report direct measurements of fractional charge, finding $q = e/3$ at $ν= 4/3$, 5/3 and 7/3, $q = 2e/3$ at $ν= 2/3$ and $q = 3e/5$ at $ν= 3/5$, while at $ν= 8/3$ we observe signatures of both $e/3$ and $2e/3$ tunneling charge. The simplicity and tunability of this design open a pathway to extend antidot-based charge measurements to other van der Waals materials, establishing antidots as a powerful and broadly applicable platform to study the quantum Hall effect.

cond-mat.mes-hall↗

arXiv2025

Engineering strong correlations in a perfectly aligned dual moiré system

Exotic collective phenomena emerge when bosons strongly interact within a lattice. However, creating a robust and tunable solid-state platform to explore such phenomena has been elusive. Dual moiré systems$-$compromising two Coulomb-coupled moiré lattices$-$offer a promising system for investigating strongly correlated dipolar excitons (composite bosons) with electrical control. Thus far, their implementation has been hindered by the relative misalignment and incommensurability of the two moiré patterns. Here we report a dual moiré system with perfect translational and rotational alignment, achieved by utilizing twisted hexagonal boron nitride (hBN) bilayer to both generate an electrostatic moiré potential and separate MoSe$_{2}$ and WSe$_{2}$ monolayers. We observe strongly correlated electron phases driven by intralayer interactions and identify interlayer Rydberg trions, which become trapped in the presence of the Mott insulating state. Importantly, our platform is electrostatically programmable, allowing the realization of different lattice symmetries with either repulsive or attractive interlayer interactions. In particular, we implement the latter scenario by optically injecting charges, which form a dipolar excitonic phase. Our results establish a versatile platform for the exploration and manipulation of exotic and topological bosonic quantum many-body phases.

cond-mat.mes-hall↗

arXiv2025

Localizing Individual Exciton on a Quantum Hall Antidot

Quantum Hall systems host quasiparticles demonstrating correlated electron physics and non-trivial quantum statistics. Excitonic phases, archetypical for interaction effect, have attracted significant interest in recent years in double-layer quantum Hall systems where spatially separated electrons and holes form bosonic condensate through Coulomb interaction. Here, employing the approach of quantum Hall antidot with two spatially separated edge channels, we demonstrate a new type of quantum Hall quasiparticle exciton which represents a quantum-coherent bound state of an electron and a hole situated on their corresponding edges coupled through intralayer tunneling and Coulomb interaction. Quantum-coherent dynamics of the exciton is reflected in the observed evolution of the position and magnitude of the antidot conductance peaks around the electron-hole resonance. The quantum Hall antidot setup allows localization and electrical tuning of individual quantum Hall excitons. Quantum superposition of vacuum- and electron-hole pairing states is observed through the gate-dependent tunneling conductance of the antidot. Modeling the electron-hole pair as a coupled two-level system, semi-quantitative understanding of experimental observations is achieved. This work opens avenues for creating quantum systems of multiple quantum Hall quasiparticles.

cond-mat.mes-hall↗