arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 541 records · Page 30Linked to original sources

arXiv2025

Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2

Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM.

physics.optics↗

arXiv2025

Anisotropic supercurrent suppression and revivals in a graphene-based Josephson junction under in-plane magnetic fields

We report on a tunable Josephson junction formed by a bilayer graphene ribbon encapsulated in WSe$_2$ with superconducting niobium contacts. We characterize the junction by measurements of the magnetic field induced interference pattern, and the AC Josephson effect manifested as "Shapiro steps", examining current dependent hysteresis and junction dynamics. The latter can be tuned by temperature, gate voltage, and magnetic field. Finally, we examine the evolution of the supercurrent when subjected to in-plane magnetic fields. Notably, we observe a strong anisotropy in the supercurrent with respect to the orientation of the in-plane magnetic field. When the field is parallel to the current direction, the supercurrent is suppressed, and shows revivals with increasing magnetic field, whereas it remains almost unaffected when the field is oriented in a perpendicular direction. We suggest that this anisotropy is caused by the dependence of supercurrent interference on the junction geometry.

cond-mat.mes-hall↗

arXiv2025

Nanoscale infrared and microwave imaging of stacking faults in multilayer graphene

Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same direction. However, for an N-layer system, there are in principle $N-1$ unique metastable stacking orders of this type. Recently, it has become clear that stacking order has a strong effect on the low energy electronic band structure with single-layer shifts completely altering the electronic properties. Most experimental work has focused on the extremal stacking orders in large part due to the difficulty of isolating and identifying intermediate orders. Motivated by this challenge, here we describe two atomic force microscopy (AFM) based techniques to unambiguously distinguish stacking orders and defects in graphite flakes. Photo-thermal infrared atomic force microscope (AFM-IR) is able to distinguish stacking orders across multiple IR wavelengths and readily provides absolute contrast via IR spectral analysis. Scanning microwave impedance microscopy (sMIM) can distinguish the relative contrast between Bernal, intermediate and rhombohedral domains. We show that both techniques are well suited to characterizing graphite van der Waals devices, providing high contrast determination of stacking order, subsurface imaging of graphene flakes buried under a hexagonal boron nitride (hBN) dielectric layer, and identifying nanoscale domain walls. Our results pave the way for the reliable fabrication of graphene multilayer devices of definite interlayer registry.

cond-mat.mes-hall↗

arXiv2025

Correlated insulating states in slow Dirac fermions on a honeycomb moir{é} superlattice

Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insulating phase has remained inaccessible in pristine graphene, where a large Fermi velocity dominates the interaction effects. To overcome this limitation, we realize a honeycomb moir{é} superlattice in a twisted MoSe$_2$ homobilayer, where a graphene-like band structure forms with a Fermi velocity reduced by nearly two orders of magnitude. These slow moir{é} bands are folded from the valence band maximum at the $Γ$ valley of the extended Brillouin zone with negligible spin-orbital coupling, and can therefore simulate massless Dirac fermions in the strongly correlated regime with full SU(2) symmetry. By correlating Rydberg exciton sensing with moir{é} trions of different spatial characters, we detect a Mott gap at the Dirac point that persists up to 110 K. We further identify correlated insulating states at $ν=-1$ with a weak ferromagnetic coupling as well as at several fractional fillings. Our results highlight the potential of studying a wide range of quantum many-body phenomena in twisted two-dimensional materials.

cond-mat.mes-hall↗

arXiv2025

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering

High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, largely impacting their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occurs within 2.5 nanoseconds, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, non-volatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking.

cond-mat.mes-hall↗

arXiv2025

Layered semiconductors integrated with polyimide thin films for high-quality valleytronic and quantum-photonic systems

Dielectric integration of layered semiconductors is a prerequisite for fabricating high-quality optoelectronic, valleytronic, and quantum-photonic devices. While hexagonal boron nitride (hBN) is the current benchmark dielectric, exploration of the most suitable dielectric materials covering the complete substrates continues to expand. This work demonstrates the formation of high optical-quality excitons in two widely explored layered semiconductors, WSe$_2$ and WS$_2$, integrated into polyimide (PI) thin films of thicknesses $\approx$500 nm. The photoluminescence (PL) studies at $T$ = 296 K show the formation of neutral excitons $\left(X^0\right)$ and trions in fully-PI-encapsulated 1L-WSe$_2$ with 2-sigma ($2σ$) spatial-inhomogeneity of 4.5 (3.4) meV in $X^0$ emission energy (linewidth), which is $\approx$1/3rd (1/5th), respectively, that of inhomogeneity measured in fully-hBN-encapsulated 1L-WSe$_2$. A smaller $2σ$ of 2.1 (2.3) meV in $X^0$ emission energy (linewidth) has been shown for fully-PI-encapsulated 1L-WS$_2$. Polarization-resolved and excitation power-dependent PL measurements of PI-isolated 1L-TMDs at $T$ = 4 K further reveal formations of high-quality neutral-biexcitons and negatively-charged biexcitons, with degrees of valley-polarization up to 21$\%$ under non-resonant excitation. Furthermore, the fully-PI-encapsulated 1L-WSe$_2$ also hosts single quantum emitters with narrow linewidths and high-spectral stability. This work indicates that PI thin films may serve the purpose of high-quality dielectric material for integrating the layered materials on a wafer scale.

cond-mat.mes-hall↗

arXiv2025

Spin-filter tunneling detection of antiferromagnetic resonance with electrically-tunable damping

Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic dynamics have utilized large, millimeter-scale bulk crystals. Here we demonstrate direct electrical detection of antiferromagnetic resonance in structures on the few-micrometer scale using spin-filter tunneling in PtTe$_2$/bilayer CrSBr/graphite junctions in which the tunnel barrier is the van der Waals antiferromagnet CrSBr. This sample geometry allows not only efficient detection, but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe$_2$ electrode. The ability to efficiently detect and control antiferromagnetic resonance enables detailed studies of the physics governing these high frequency dynamics.

cond-mat.mtrl-sci↗

arXiv2025

Observation of the Axion quasiparticle in 2D MnBi$_2$Te$_4$

In 1978, Wilczek and Weinberg theoretically discovered a new boson-the Axion-which is the coherent oscillation of the $θ$ field in QCD. Its existence can solve multiple fundamental questions including the strong CP problem of QCD and the dark matter. However, its detection is challenging because it has almost no interaction with existing particles. Similar $θ$ has been introduced to condensed matter and so far studied as a static, quantized value to characterize topology of materials. But the coherent oscillation of $θ$ in condensed matter is proposed to lead to new physics directly analogous to the high-energy Axion particle, the dynamical Axion quasiparticle (DAQ). In this paper, we present the direct observation of the DAQ. By combining 2D electronic device with ultrafast pump-probe optics, we manage to measure the magnetoelectric coupling $θ$ ($θ\proptoα$) of 2D MnBi$_2$Te$_4$ with sub-picosecond time-resolution. This allows us to directly observe the DAQ by seeing a coherent oscillation of $θ$ at ~44 GHz in real time, which is uniquely induced by the out-of-phase antiferromagnetic magnon. Interestingly, in 2D MnBi$_2$Te$_4$, the DAQ arises from the magnon-induced coherent modulation of Berry curvature. Such ultrafast control of quantum wavefunction can be generalized to manipulate Berry curvature and quantum metric of other materials in ultrafast time-scale. Moreover, the DAQ enables novel quantum physics such as Axion polariton and electric control of ultrafast spin polarization, implying applications in unconventional light-matter interaction and coherent antiferromagnetic spintronics. Beyond condensed matter, the DAQ can serve as a detector of the dark matter Axion particle. We estimate the detection frequency range and sensitivity in the critically-lacking meV regime, contributing to one of the most challenging questions in fundamental physics.

cond-mat.mes-hall↗

arXiv2025

Superconductivity and quantized anomalous Hall in rhombohedral graphene

Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between superconducting materials typically amorphous metals and semiconducting quantum Hall or quantum anomalous Hall (QAH) systems. However, the interfacial disorder inherent in this approach can prevent the formation of isolated topological modes. An appealing alternative is to use low-density flat band materials where the ground state can be tuned between intrinsic superconducting and quantum anomalous Hall states using only the electric field effect. However, quantized transport and superconductivity have not been simultaneously achieved. Here, we show that rhombohedral tetralayer graphene aligned to a hexagonal boron nitride substrate hosts a quantized anomalous Hall state at superlattice filling $ν=-1$ as well as a superconducting state at $ν-3.5$ at zero magnetic field. Remarkably, gate voltage can also be used to actuate nonvolatile switching of the chirality in the quantum anomalous Hall state, allowing, in principle, arbitrarily reconfigurable networks of topological edge modes in locally gated devices. Thermodynamic compressibility measurements further reveal a topologically ordered fractional Chern insulator at $ν=2/3$-also stable at zero magnetic field-enabling proximity coupling between superconductivity and fractionally charged edge modes. Finally, we show that, as in rhombohedral bi- and trilayers, integrating a transition metal dichalcogenide layer to the heterostructure nucleates a new superconducting pocket, while leaving the topology of the $ν=-1$ quantum anomalous Hall state intact. Our results pave the way for a new generation of hybrid interfaces between superconductors and topological edge states in the low-disorder limit.

cond-mat.mes-hall↗

arXiv2025

Stability diagram of layer-polarized quantum Hall states in twisted trilayer graphene

In the twisted trilayer graphene (tTLG) platform, the rich beating patterns between the three graphene layers give rise to a plethora of new length scales and reconstructed electronic bands arising from the emergent moiré and moiré-of-moiré superlattices. The co-existing lattices and superlattices interact and compete with each other to determine the overall transport properties of tTLG, the hierarchy of which can be electrostatically controlled by tuning the out-of-plane charge distribution or layer polarization. In this work, we measure the stability diagram of layer-polarized quantum Hall states in tTLG by systematically mapping out layer-specific Chern numbers in each layer, and intra- and interlayer Chern transitions as a function of displacement field D and total carrier density n. In contrast to twisted bilayer systems, the rich interplay between the three atomic layers gives rise to a complex layer-polarized stability diagram with unconventional transport features that evolve rapidly with electric and magnetic fields. The stability diagram quantitatively characterizes the interlayer screening and charge distribution in tTLG with implication of strong inter-atomic-layer Coulomb coupling. Our work provides comprehensive guidance and insights into predicting and controlling layer-polarization and interlayer transitions in tTLG, and for tuning the individual role and interactions of each participating constituent towards novel material properties.

cond-mat.mes-hall↗

arXiv2025

Magnon hydrodynamics in an atomically-thin ferromagnet

Strong interactions between particles can lead to emergent collective excitations. These phenomena have been extensively established in electronic systems, but are also expected to occur for gases of neutral particles like magnons, i.e. spin waves, in magnets. In a hydrodynamic regime where magnons are strongly interacting, they can form a slow collective density mode -- in analogy to sound waves in water -- with characteristic low-frequency signatures. While such a mode has been predicted in theory, its signatures have yet to be observed experimentally. In this work, we isolate exfoliated sheets of CrCl$_3$ where magnon interactions are strong, and develop a technique to measure its collective magnon dynamics via the quantum coherence of nearby Nitrogen-Vacancy (NV) centers in diamond. We find that the thermal magnetic fluctuations generated by monolayer CrCl$_3$ exhibit an anomalous temperature dependence, whereby fluctuations increase upon decreasing temperature. Our analysis suggests that this anomalous trend is a consequence of the damping rate of a low-energy magnon sound mode which sharpens as magnon interactions increase with increasing temperature. By measuring the magnetic fluctuations emitted by thin multilayer CrCl$_{3}$ in the presence of a variable-frequency drive field, we observe spectroscopic evidence for this two-dimensional magnon sound mode.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage.

cond-mat.mes-hall↗

arXiv2025

Gating monolayer and bilayer graphene with a two-dimensional semiconductor

Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes, in low light conditions, and for specific gating properties. We determine the effectiveness and limitations of a semiconducting gate in graphene and bilayer graphene devices. Using the semiconducting transition metal dichalcogenides molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2), we show that two-dimensional semiconductors can be used to suitably gate the graphene devices under appropriate operating conditions. For single-gated devices, semiconducting gates are comparable to metallic gates below liquid helium temperatures but include resistivity features resulting from gate voltage clamping of the semiconductor. In dual-gated devices, we pin down the parameter range of effective operation and find that the semiconducting depletion regime results in clamping and hysteresis from defect-state charge trapping.

cond-mat.mes-hall↗

arXiv2025

Control of atomic reconstruction and quasi-1D excitons in strain-engineered moiré heterostructures

In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design has remained challenging. Here, we demonstrate the deterministic creation of one-dimensional arrays from initially zero-dimensional triangular moiré patterns in MoSe$_2$-WSe$_2$ heterobilayers. This transformation, driven by the interplay of uniaxial strain and atomic reconstruction, results in one-dimensional confinement of interlayer excitons within domain walls, exhibiting near-unity linearly polarized emission related to the confinement-induced symmetry breaking. The width of the domain walls--and consequently the degree of exciton confinement--can be precisely tuned by the interlayer twist angle. By applying out-of-plane electric field, the confined excitons exhibit energy shifts exceeding 100~meV and changes in the fine-structure splitting by up to a factor of two. Our work demonstrates the potential of strain engineering for constructing designer moiré systems with programmable quantum properties, paving the way for future optoelectronic applications.

cond-mat.mes-hall↗

arXiv2025

Stacking-induced ferroelectricity in tetralayer graphene

Recent studies have reported emergent ferroelectric behavior in twisted or moiré-engineered graphene-based van der Waals heterostructures, yet the microscopic origin of this effect remains under debate. Pristine mono- or few-layer graphene lacks a permanent dipole due to its centrosymmetric lattice, making the emergence of ferroelectricity unlikely. However, mixed-stacked graphene, such as the ABCB tetralayer configuration, breaks both inversion and mirror symmetry and has been theoretically predicted to support electrically switchable dipoles. ABCB graphene represents the simplest natural graphene polytype exhibiting intrinsic out-of-plane polarization, arising from asymmetric charge carrier distribution across its layers. Here, we report robust ferroelectric behavior in dual-gated, non-aligned ABCB tetralayer graphene encapsulated in hexagonal boron nitride. The device exhibits pronounced hysteresis in resistance under both top and bottom gate modulation, with the effect persisting up to room temperature. This hysteresis originates from reversible layer-polarized charge reordering, driven by gate-induced transitions between ABCB and BCBA stacking configurations -- without requiring moiré superlattices. Our findings establish stacking-order-induced symmetry breaking as a fundamental route to electronic ferroelectricity in graphene and open pathways for non-volatile memory applications based on naturally occurring mixed-stacked multilayer graphene.

cond-mat.mes-hall↗

arXiv2025

Superballistic conduction in hydrodynamic antidot graphene superlattices

Viscous electron flow exhibits exotic signatures such as superballistic conduction. In order to observe hydrodynamics effects, a 2D device where the current flow is as inhomogeneous as possible is desirable. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction, which is related to a transition from a non-collective to a collective regime of transport, behaves non-monotonically with the magnetic field. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow and provide valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws.

cond-mat.mes-hall↗

arXiv2025

Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene

In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable hot electron extraction in a two-dimensional semiconductor heterojunction

Hot carrier solar cells (HCSCs), harvesting excess energy of the hot carriers generated by above-band-gap photoexcitation, is crucial for pushing the solar cell efficiency beyond the Shockley Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe2 to WS2. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe2 can boost hot-electron extraction density (n_ET) by factor up to several tens. Such enhancement arises from interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, n_ET can be further enhanced by reducing the conduction band offset with external electric field. Our results provide in-depth insights into design of HCSCs with electrostatic strategies.

cond-mat.mes-hall↗