arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 613 records · Page 34Linked to original sources

arXiv2025

Impact of Spin-Orbit Coupling on Superconductivity in Rhombohedral Graphene

Spin-orbit coupling (SOC) has played an important role in many topological and correlated electron materials. In graphene-based systems, SOC induced by transition metal dichalcogenide (TMD) at proximity was shown to drive topological states and strengthen superconductivity. However, in rhombohedral multilayer graphene, a robust platform for electron correlation and topology, superconductivity and the role of SOC remain largely unexplored. Here we report transport measurements of TMD-proximitized rhombohedral trilayer graphene (RTG). We observed a new hole-doped superconducting state SC4 with Tc = 230 mK. On the electron-doped side, we identified a new isospin-symmetry breaking three-quarter-metal (TQM) phase and observed the nearby weak superconducting state SC3 is significantly enhanced. Surprisingly, the original superconducting state SC1 in bare RTG is strongly suppressed in the presence of TMD - opposite to the effect of SOC on all other graphene superconductivities. Our observations form the basis of exploring superconductivity and non-Abelian quasiparticles in rhombohedral graphene devices.

cond-mat.supr-con↗

arXiv2025

Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FCIs have been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here, we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices, which exhibit both integer and fractional quantum anomalous Hall effects with rich tunability including electric displacement field, perpendicular magnetic field and in-plane magnetic field. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a quantum phase transition showing a sign reversal of the Hall resistivity at finite magnetic fields. Surprisingly, the FCI state at v = 2/3 survives in the phase transitions, exhibiting a robust quantized Hall resistivity across both phases. Finally we have further demonstrated the indispensable role moire potential plays in the formation of the flat Chern band from a theoretical perspective. Our work has established RHG/hBN moire superlattices as a promising platform for exploring quasi-particles with fractional charge and non-Abelian anyons at zero magnetic field.

cond-mat.mes-hall↗

arXiv2025

Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers

Excitonic insulators represent a unique quantum phase of matter, providing a rich ground for studying exotic quantum bosonic states. Strongly coupled electron-hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. Based on electron-hole bilayers made of MoSe2/hBN/WSe2 heterostructures, here we study the behavior of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron-hole interactions and Landau level quantization that opens new possibilities for exploring quantum phenomena in composite bosonic insulators.

cond-mat.mes-hall↗

arXiv2025

Charge state tuning of spin defects in hexagonal boron nitride

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Spin-forbidden excitations in the magneto-optical spectra of CrI$_3$ tuned by covalency

Spin-forbidden ($ΔS \neq 0$) multiplet excitations and their coupling to magnetic properties are of increasing importance for magneto-optical studies of correlated materials. Nonetheless, the mechanisms for optically brightening these transitions and their generality remain poorly understood. Here, we report magnetic circular dichroism (MCD) spectroscopy on the van der Waals (vdW) ferromagnet (FM) CrI$_3$. Previously unreported spin-forbidden ($ΔS = 1$) ${}^4A_{2\mathrm{g}} \to{}^2E_\mathrm{g}/{}^2T_{1\mathrm{g}}$ Cr${}^{3+}$ $dd$ excitations are observed near the ligand-to-metal charge transfer (LMCT) excitation threshold. The assignment of these excitations and their Cr$^{3+}$ multiplet character is established through complementary Cr $L_3$-edge resonant inelastic X-ray scattering (RIXS) measurements along with charge transfer multiplet (CTM) calculations and chemical trends in the chromium trihalide series (CrX$_3$, X = Cl, Br, I). We utilize the high sensitivity of MCD spectroscopy to study the thickness dependent optical response. The spin-forbidden excitations remain robust down to the monolayer limit and exhibit a significant magnetic field tunability across the antiferromagnetic to FM transition in few-layer samples. This behavior is associated to changes in the metal-ligand covalency with magnetic state, as supported by our CTM analysis. Our results clarify the magneto-optical response of CrI$_3$ and identify covalency as a central mechanism for the brightening and field-tunability of spin-forbidden multiplet excitations.

cond-mat.str-el↗

arXiv2025

Quantum oscillations in a dipolar excitonic insulator

Quantum oscillations in magnetization or resistivity are a defining feature of metals subject to an external magnetic field. The phenomenon is generally not expected in insulators without a Fermi surface. The observations of quantum oscillations in Kondo insulating materials have provided a rare counterexample and attracted much theoretical interest. However, the magnetic oscillations in correlated insulators remain poorly understood. Here we report the observations of resistivity quantum oscillations in an excitonic insulator realized in Coulomb-coupled electron-hole double layers with gate-tunability that allows the phenomenon to be explored in a more controllable fashion than in bulk materials. When the cyclotron energy of the electrons or holes is tuned to be comparable to or larger than the exciton binding energy, recurring transitions between excitonic insulators and electron-hole decoupled quantum Hall states are observed. Compressibility measurements show an oscillatory exciton binding energy as a function of magnetic field and electron-hole pair density. Coulomb drag measurements further reveal the formation of excitons with finite angular momentum. Our results are qualitatively captured by mean-field theory calculations. The study demonstrates a new platform for studying quantum oscillations in correlated insulators.

cond-mat.mes-hall↗

arXiv2025

Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.

cond-mat.mes-hall↗

arXiv2025

Unconventional Superconducting Phase Diagram of Monolayer WTe2

The existence of a quantum critical point (QCP) and fluctuations around it are believed to be important for understanding the phase diagram in unconventional superconductors such as cuprates, iron pnictides, and heavy fermion superconductors. However, the QCP is usually buried deep within the superconducting dome and is difficult to investigate. The connection between quantum critical fluctuations and superconductivity remains an outstanding problem in condensed matter. Here combining both electrical transport and Nernst experiments, we explicitly demonstrate the onset of superconductivity at an unconventional QCP in gate-tuned monolayer tungsten ditelluride (WTe2), with features incompatible with the conventional Bardeen-Cooper-Schrieffer (BCS) scenario. The results lead to a novel superconducting phase diagram that is distinguished from other known superconductors. Two distinct gate-tuned quantum phase transitions are observed at the ends of the superconducting dome. We find that quantum fluctuations around the QCP of the underdoped regime are essential for understanding how the monolayer superconductivity is established. The unconventional phase diagram we report here illustrates a previously unknown relation between superconductivity and QCP.

cond-mat.mes-hall↗

arXiv2025

Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride

Dynamic nuclear polarization (DNP) using the boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) has gained increasing attention. Understanding this DNP requires systematically investigating the optically detected magnetic resonance (ODMR) spectra and developing a model that quantitatively describes its behavior. Here, we measure the ODMR spectra of $\mathrm{V_B^-}$ in $\mathrm{h}^{10}\mathrm{B}^{15}\mathrm{N}$ over a wide magnetic field range, including the ground state level anti-crossing (GSLAC), and compare them with the results of the Lindblad-based simulation that considers a single electron spin and three neighboring $^{15}\mathrm{N}$ nuclear spins. Our simulation successfully reproduces the experimental spectra, including the vicinity of GSLAC. It can explain the overall behavior of the magnetic field dependence of the nuclear spin polarization estimated using the Lorentzian fitting of the spectra. Despite such qualitative agreement, we also demonstrate that the fitting methods cannot give accurate polarizations. Finally, we discuss that symmetry-induced mechanisms of $\mathrm{V_B^-}$ limit the maximum polarization. Our study is an essential step toward a quantitative understanding of DNP using defects in hBN and its quantum applications.

cond-mat.mes-hall↗

arXiv2025

Laser patterning of the room temperature van der Waals ferromagnet 1$T$-CrTe$_2$

Lamellar crystalline materials, whose layers are bond by van der Waals forces, can be stacked to form ultrathin artificial heterostructures, and in particular vertical magnetic junctions when some of the stacked materials are (ferro)magnetic. Here, using the room temperature van der Waals ferromagnet 1$T$-CrTe$_2$, we report a method for patterning lateral magnetic junctions. Exploiting the heat-induced phase transformation of the material into Cr$_x$Te$_y$ compounds ($x/y>1/2$), we use local laser heating to imprint patterns at the micron-scale. Optimizing laser heat dissipation, we further demonstrate the crucial role of the substrate to control the phase transformation. If plain, unstructured poorly heat-conducting substrates allow for direct writing of magnetic patterns, structured $h$-BN layers can serve as heat stencils to draw potentially thinner patterns. Besides, $h$-BN encapsulation turns out to be heat-protective (in addition from protecting against oxidation as it is generally used for), allowing the demonstration of room temperature ferromagnetism in $<$7~nm-thick 1$T$-CrTe$_2$.

cond-mat.mtrl-sci↗

arXiv2025

Generation of narrowband quantum emitters in hBN with optically addressable spins

Electron spins coupled with optical transitions in solids stand out as a promising platform for developing spin-based quantum technologies. Recently, hexagonal boron nitride (hBN) - a layered Van der Waals (vdW) crystal, has emerged as a promising host for optically addressable spin systems. However, to date, on-demand generation of isolated single photon emitters with pre-determined spin transitions has remained elusive. Here, we report on a single step, thermal processing of hBN flakes that produces high density, narrowband, quantum emitters with optically active spin transitions. Remarkably, over 25% of the emitters exhibit a clear signature of an optical spin readout at room temperature, surpassing all previously reported results by an order of magnitude. The generated spin defect complexes exhibit both S = 1 and S = 1/2 transitions, which are explained by charge transfer from strongly to weakly coupled spin pairs. Our work advances the understanding of spin complexes in hBN and paves the way for single spin - photon interfaces in layered vdW materials with applications in quantum sensing and information processing.

quant-ph↗

arXiv2025

Electric-field switchable chirality in rhombohedral graphene Chern insulators stabilized by tungsten diselenide

Chern insulators host topologically protected chiral edge currents with quantized conductance characterized by their Chern number. Switching the chirality of a Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral multilayer graphene-based Chern insulators. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band with the Chern number tunable from -1, 1 to 2. Furthermore, integrating monolayer tungsten diselenide at the moireless interface of rhombohedral decalayer graphene/h-BN superlattices stabilizes the Chern insulators, enabling quantized anomalous Hall resistance of h/2e^2. Remarkably, the Chern number can be switched from -1 to 2 using displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattices as a versatile platform for topological engineering, with switchable chirality offering significant promise for integrating chiral edge currents into topological electronic circuits.

cond-mat.mes-hall↗

arXiv2025

Quantum confining excitons with electrostatic moiré superlattice

Quantum confining excitons has been a persistent challenge in the pursuit of strong exciton interactions and quantum light generation. Unlike electrons, which can be readily controlled via electric fields, imposing strong nanoscale potentials on excitons to enable quantum confinement has proven challenging. In this study, we utilize piezoresponse force microscopy to image the domain structures of twisted hexagonal boron nitride (hBN), revealing evidence of strong in-plane electric fields at the domain boundaries. By placing a monolayer MoSe2 only one to two nanometers away from the twisted hBN interface, we observe energy splitting of neutral excitons and Fermi polarons by several millielectronvolts at the moiré domain boundaries. By directly correlating local structural and optical properties, we attribute such observations to excitons confined in a nanoscale one-dimensional electrostatic potential created by the strong in-plane electric fields at the moiré domain boundaries. Intriguingly, this 1D quantum confinement results in pronounced polarization anisotropy in the excitons' reflection and emission, persistent to temperatures as high as ~80 Kelvins. These findings open new avenues for exploring and controlling strongly interacting excitons for classical and quantum optoelectronics.

cond-mat.mes-hall↗

arXiv2025

Landauer resistivity dipole at one dimensional defect revealed via near-field photocurrent nanoscopy

The fundamental question how to describe Ohmic resistance at the nanoscale has been answered by Landauer in his seminal picture of the so-called Landauer resistivity dipole. This picture has been theoretically well understood, however experimentally there are only few studies due to the need for a non-invasive local probe. Here we use the nanometer lateral resolution of near-field photocurrent imaging to thoroughly characterize a buried monolayer - bilayer graphene interface as an ideal one dimensional defect for the Landauer resistivity dipole. Via systematic tuning of the overall charge carrier density and the current flow we are able to detect the formation of Landauer resistivity dipoles due to charge carrier accumulation around the one dimensional defects. We found that, for Fermi energy values near the charge neutrality point (i.e. at low hole or electron doping), the photocurrent exhibits the same polarity as the applied source-drain voltage, which is consistent with changes in carrier concentration induced by the Landauer resistivity dipoles. This signature is no longer evident at higher charge carrier density in agreement with the performed numerical calculations. Photocurrent nanoscopy can thus serve as non-invasive technique to study local dissipation at hidden interfaces.

cond-mat.mes-hall↗

arXiv2025

Fluctuating magnetism and Pomeranchuk effect in multilayer graphene

Magnetism typically arises from the effect of exchange interactions on highly localized fermionic wave functions in f- and d-atomic orbitals. In rhombohedral multilayer graphene (RMG), in contrast, magnetism-manifesting as spontaneous polarization into one or more spin and valley flavors[1-7]-originates from itinerant electrons near a Van Hove singularity. Here, we show experimentally that the electronic entropy in this system shows signatures typically associated with disordered local magnetic moments, unexpected for electrons in a fully itinerant metal. Specifically, we find a contribution $Δ$ S $\approx$ 1k$_B$/charge carrier that onsets at the Curie temperature and survives over one order of magnitude in temperature. First order phase transitions show an isospin `Pomeranchuk effect' in which the fluctuating moment phase is entropically favored over the nearby symmetric Fermi liquid[8, 9]. Our results imply that despite the itinerant nature of the electron wave functions, the spin- and valley polarization of individual electrons are decoupled, a phenomenon typically associated with localized moments, as happens, for example, in solid 3He[10]. Transport measurements, surprisingly, show a finite temperature resistance minimum within the fluctuating moment regime, which we attribute to the interplay of fluctuating magnetic moments and electron phonon scattering. Our results highlight the universality of soft isospin modes to two-dimensional flat band systems.

cond-mat.str-el↗

arXiv2025

Electrical Generation of Colour Centres in Hexagonal Boron Nitride

Defects in wide band gap crystals have emerged as a promising platform for hosting colour centres that enable quantum photonic applications. Among these, hexagonal boron nitride (hBN), a van der Waals material, stands out for its ability to be integrated into heterostructures, enabling unconventional charge injection mechanisms that bypass the need for p-n junctions. This advancement allows for the electrical excitation of hBN colour centres deep inside the large hBN bandgap, which has seen rapid progress in recent developments. Here, we fabricate hBN electroluminescence (EL) devices that generate narrowband colour centres suitable for electrical excitation. The colour centres are localised to tunnelling current hotspots within the hBN flake, which are designed during device fabrication. We outline the optimal conditions for device operation and colour centre stability, focusing on minimising background emission and ensuring prolonged operation. Our findings follow up on the existing literature and mark a step forward towards the integration of hBN based colour centres into quantum photonic technologies.

physics.optics↗

arXiv2025

Direct measurement of the longitudinal exciton dispersion in hBN by resonant inelastic x-ray scattering

We report resonant inelastic X-ray scattering (RIXS) measurements on the prototypical hexagonal boron nitride hBN layered compound. The RIXS results at the B and N K edges have been combined with electron energy loss spectroscopy (EELS) experiments and ab initio calculations within the framework of the Bethe-Salpeter equation of many-body perturbation theory. By means of this tight interplay of different spectroscopies, the lowest longitudinal exciton of hBN has been identified. Moreover, its qualitatively different dispersions along the $Γ$K and the $Γ$M directions of the Brillouin zone have been determined. Our study advocates soft X-ray RIXS and EELS to be a promising combination to investigate electronic excitations in materials.

cond-mat.mtrl-sci↗

arXiv2025

Time-reversal symmetry breaking fractional quantum spin Hall insulator in moiré MoTe2

Twisted bilayer transition metal dichalcogenide semiconductors, which support flat Chern bands with enhanced interaction effects, realize a platform for fractional Chern insulators and fractional quantum spin Hall (FQSH) insulators. A recent experiment has reported the emergence of a FQSH insulator protected by spin-Sz conservation at a moiré lattice filling factor ν=3 in 2.1-degree twisted bilayer MoTe2. Theoretical studies have proposed both time-reversal symmetric and asymmetric ground states as possible candidates for the observed FQSH insulator, but the nature of the state remains unexplored. Here we report the observation of spontaneous time-reversal symmetry breaking at generic fillings in 2.1-degree twisted bilayer MoTe2 from ν<1 all the way to ν>6 except at ν=2, 4, and 6. Although zero Hall response is observed at ν=3 for magnetic fields higher than 20 mT, a finite anomalous Hall response accompanied by a magnetic hysteresis is observed at lower magnetic fields, demonstrating spontaneous time-reversal symmetry breaking. Our work shows the tendency towards ferromagnetism by doping the first three pairs of conjugate Chern bands in the material; it also sheds light on the nature of the FQSH insulator at ν=3.

cond-mat.mes-hall↗