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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 667 records · Page 37Linked to original sources

Edge dependece of nonlocal transport in gapped bilayer graphene

The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this resistance was unclear. This study focused on dual-gate bilayer graphene (BLG) devices with naturally cleaved edges, examining how edge-etching with an oxygen plasma process affects electron transport. Before etching, local resistance at the charge neutral point increased exponentially with the displacement field and nonlocal resistance was well explained by ohmic contribution, which is typical of gapped BLG. After-etching, however, local resistance saturated with increasing displacement field, and nonlocal resistance deviated by three orders of magnitude from ohmic contribution. We suggest that these significant changes in local and nonlocal resistance arise from the formation of edge conducting pathways after the edge-etching, rather than from a topological property of gapped BLG that has been claimed in previous literatures.

cond-mat.mes-hall↗

Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene

Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1°does not alter the emergent valley symmetry or the single-particle band topology.

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Independently Tunable Flat Bands and Correlations in a Graphene Double Moiré System

We report on a double moiré system consisting of four graphene layers, where the top and bottom pairs form small-twist-angle bilayer graphene, and the middle interface has a large rotational mismatch. This system shows clear signatures of two sets of spatially separated flat bands associated with the top and bottom twisted bilayer graphene (TBG) subsystems, each independently tunable. Thermodynamic analysis reveals weak correlations between layers that allow the chemical potential to be measured as a function of carrier density for each constituent TBG. We find that correlated insulating states at integer number of electrons per moiré unit cell are most robust near magic angle, whereas gapped states at neutrality are more robust at larger twist angles.

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Engineering superconducting contacts transparent to a bipolar graphene

Graphene's exceptional electronic mobility, gate-tunability, and contact transparency with superconducting materials make it ideal for exploring the superconducting proximity effect. However, the work function difference between graphene and superconductors causes unavoidable doping of graphene near contacts, forming a p-n junction in the hole-doped regime and reducing contact transparency. This challenges the device implementation that exploits graphene's bipolarity. To address this limitation, we developed a new fabrication scheme for two-dimensional superconducting contacts that allows independent control over charge concentration and polarity for both the graphene in contact with superconductors and the graphene channel. Contact transparency, conductance enhancement, and Josephson coupling were measured to confirm transparent contacts to both polarities of graphene. Moreover, we demonstrated the Andreev process in the quantum Hall edge state at a negative filling factor of ν = -2. This scheme will open avenues for realizing various theoretical propositions utilizing the bipolarity of graphene combined with superconductivity.

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Glassy Relaxation Dynamics in the Two-Dimensional Heavy Fermion Antiferromagnet CeSiI

The recent discovery of the van der Waals (vdW) layered heavy fermion antiferromagnetic metal CeSiI offers promising potential for achieving accessible quantum criticality in the two-dimensional (2D) limit. CeSiI exhibits both heavy fermion behavior and antiferromagnetic (AFM) ordering, while the exact magnetic structure and phase diagram have yet to be determined. Here, we investigate magnetic properties of atomically thin CeSiI devices with thicknesses ranging from 2-15 vdW layers. The thickness-dependent magnetotransport measurement reveals an intrinsic 2D nature of heavy fermion behavior and antiferromagnetism. Notably, we also find an isotropic, time-dependent hysteresis in both magnetoresistance and Hall resistance, showing glassy relaxation dynamics. This glassy behavior in magnetic structures may suggest the presence of spin glass phases or multipolar ordering, further establishing CeSiI as an intriguing material system for investigating the interplay between magnetic orders and the Kondo effect.

cond-mat.str-el↗

Hybrid Frenkel-Wannier excitons facilitate ultrafast energy transfer at a 2D-organic interface

Two-dimensional transition metal dichalcogenides (TMDs) and organic semiconductors (OSCs) have emerged as promising material platforms for next-generation optoelectronic devices. The combination of both is predicted to yield emergent properties while retaining the advantages of their individual components. In OSCs the optoelectronic response is typically dominated by localized Frenkel-type excitons, whereas TMDs host delocalized Wannier-type excitons. However, much less is known about the spatial and electronic characteristics of excitons at hybrid TMD/OSC interfaces, which ultimately determine the possible energy and charge transfer mechanisms across the 2D-organic interface. Here, we use ultrafast momentum microscopy and many-body perturbation theory to elucidate a hybrid exciton at an TMD/OSC interface that forms via the ultrafast resonant Förster energy transfer process. We show that this hybrid exciton has both Frenkel- and Wannier-type contributions: Concomitant intra- and interlayer electron-hole transitions within the OSC layer and across the TMD/OSC interface, respectively, give rise to an exciton wavefunction with mixed Frenkel-Wannier character. By combining theory and experiment, our work provides previously inaccessible insights into the nature of hybrid excitons at TMD/OSC interfaces. It thus paves the way to a fundamental understanding of charge and energy transfer processes across 2D-organic heterostructures.

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Extraordinary magnetoresistance in high-quality graphene devices with daisy chains and Fermi-level pinning

We studied daisy-chained extraordinary magnetoresistance (EMR) devices based on high quality monolayer graphene encapsulated in hexagonal boron nitride (h-BN) at room temperature. The largest magnetoresistance (MR) achieved in our devices is 4.6 x 10^7 %, the record for EMR devices to date. The magnetic field sensitivity, dR/dB, reaches 104 kohm/T, exceeding the previous record set by encapsulated graphene by more than 300 %, and is comparable with state-of-the-art graphene Hall sensors at cryogenic temperatures (4.2 K). We demonstrate that daisy chaining multiple EMR devices is a new way to reach arbitrarily high sensitivity and signal-to-noise ratio, and extremely small noise equivalent field for weak magnetic field detection. Finally, we show the evidence of metal contact-induced Fermi-level pinning in the sample and its influence on graphene properties, current distribution and EMR performance. We highlight the EMR geometry as an interesting alternative to the Hall geometry for fundamental physics studies.

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Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS$_4$ which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS$_4$. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS$_4$ but also underscore the potential of van der Waals magnets for exploring interesting phenomena.

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Visualizing incommensurate inter-valley coherent states in rhombohedral trilayer graphene

ABC-stacked rhombohedral graphene multilayers exhibit a wide variety of electronic ground states characterized by broken isospin symmetry and superconductivity. Recently, indirect evidence of inter-valley coherent (IVC) order has been reported in rhombohedral trilayer graphene (RTG), with possible implications for the origin of superconductivity. Here, we report the direct visualization of IVC order in RTG using scanning tunneling microscopy and spectroscopy. Tuning the chemical potential through the Van Hove singularity near the edge of the valence band, we observe a cascade of phase transitions associated with the formation of half- and quarter-metal states. IVC phases, distinguished by an enlarged real space unit cell, are directly imaged near both the high- and low-density boundaries of the half-metal phase. At high hole density, we precisely reconstruct the IVC band structure through quasiparticle interference. Intriguingly, the charge density modulations reveal a C3-symmetric incommensurate IVC order that agrees with the recent prediction of an IVC-crystal phase. Our findings demonstrate that IVC phases are a widespread symmetry-broken ground state within graphene systems.

cond-mat.mes-hall↗

Systematic characterization of nanoscale $h$-BN quantum sensor spots created by helium-ion microscopy

The nanosized boron vacancy ($V_\mathrm{B}^-$) defect spot in hexagonal boron nitride ($h$-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an $h$-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized $V_\mathrm{B}^-$ defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the $h$-BN flakes, and the substrate on which the $h$-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.

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Correlated topological flat bands in rhombohedral graphite

Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states.

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Chiral Flat-Band Optical Cavity with Atomically Thin Mirrors

A fundamental requirement for photonic technologies is the ability to control the confinement and propagation of light. Widely utilized platforms include two-dimensional (2D) optical microcavities in which electromagnetic waves are confined between either metallic or distributed Bragg reflectors. Recently, transition metal dichalcogenides hosting tightly bound excitons with high optical quality have emerged as promising atomically thin mirrors. In this work, we propose and experimentally demonstrate a sub-wavelength 2D nano-cavity using two atomically thin mirrors with degenerate resonances. Angle-resolved measurements show a flat band, which sets this system apart from conventional photonic cavities. Remarkably, we demonstrate how the excitonic nature of the mirrors enables the formation of chiral and tunable optical modes upon the application of an external magnetic field. Moreover, we show the electrical tunability of the confined mode. Our work demonstrates a mechanism for confining light with high-quality excitonic materials, opening perspectives for spin-photon interfaces, and chiral cavity electrodynamics.

physics.optics↗

On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures

Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant excitations and charge dynamics. However, their micron-size and complex (dual-)gated structures have challenged such measurements. Here, we demonstrate on-chip THz spectroscopy on a dual-gated bilayer graphene device at liquid helium temperature. To avoid unwanted THz absorption by metallic gates, we developed a scheme of operation by combining semiconducting gates and optically controlled gating. This allows us to measure the clean THz response of graphene without being affected by the gates. We observed the THz signatures of electric-field-induced bandgap opening at the charge neutrality. We measured Drude conductivities at varied charge densities and extracted key parameters, including effective masses and scattering rates. This work paves the way for studying novel emergent phenomena in dual-gated two-dimensional materials.

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High-Speed Graphene-based Sub-Terahertz Receivers enabling Wireless Communications for 6G and Beyond

In recent years, the telecommunications field has experienced an unparalleled proliferation of wireless data traffic. Innovative solutions are imperative to circumvent the inherent limitations of the current technology, in particular in terms of capacity. Carrier frequencies in the sub-terahertz (sub-THz) range (~0.2-0.3 THz) can deliver increased capacity and low attenuation for short-range wireless applications. Here, we demonstrate a direct, passive and compact sub-THz receiver based on graphene, which outperforms state-of-the-art sub-THz receivers. These graphene-based receivers offer a cost-effective, CMOS-compatible, small-footprint solution that can fulfill the size, weight, and power consumption (SWaP) requirements of 6G technologies. We exploit a sub-THz cavity, comprising an antenna and a back mirror, placed in the vicinity of the graphene channel to overcome the low inherent absorption in graphene and the mismatch between the areas of the photoactive region and the incident radiation, which becomes extreme in the sub-THz range. The graphene receivers achieve a multigigabit per second data rate with a maximum distance of ~3 m from the transmitter, a setup-limited 3 dB bandwidth of 40 GHz, and a high responsivity of 0.16 A/W, enabling applications such as chip-to-chip communication and close proximity device-to-device communication.

physics.optics↗

Rydberg series of intralayer K-excitons in WSe$_2$ multilayers

Semiconducting transition metal dichalcogenides of group VI are well-known for their prominent excitonic effects and the transition from an indirect to a direct band gap when reduced to monolayers. While considerable efforts have elucidated the Rydberg series of excitons in monolayers, understanding their properties in multilayers remains incomplete. In these structures, despite an indirect band gap, momentum-direct excitons largely shape the optical response. In this work, we combine magneto-reflectance experiments with theoretical modeling based on the $\mathbf {k\cdot p}$ approach to investigate the origin of excitonic resonances in WSe$_2$ bi-, tri-, and quadlayers. For all investigated thicknesses, we observe a series of excitonic resonances in the reflectance spectra, initiated by a ground state with an amplitude comparable to the ground state of the 1$s$ exciton in the monolayer. Higher energy states exhibit a decrease in intensity with increasing energy, as expected for the excited states of the Rydberg series, although a significant increase in the diamagnetic shift is missing in tri- and quadlayers. By comparing the experimental observations with theoretical predictions, we discover that the excitonic resonances observed in trilayers originate from two Rydberg series, while quadlayers exhibit four such series, and bilayers host a single Rydberg series similar to that found in monolayers.

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Full tomography of topological Andreev bands in graphene Josephson junctions

Multiply connected electronic networks threaded by flux tubes have been proposed as a platform for adiabatic quantum transport and topological states. Multi-terminal Josephson junction (MTJJ) has been suggested as a pathway to realize this concept. Yet, the manifestations of topology in MTJJ remain open for experimental study. Here, we investigated the artificial topological band structure of three-terminal graphene Josephson junctions. Employing tunnelling spectroscopy and magnetic flux gates, we captured the tomography of the Andreev bound state (ABS) energy spectrum as a function of two independent phase differences. This ABS spectrum exhibits the topological transition from gapped to gapless states, akin to the band structure of nodal-line semimetals. Our results show the potential of graphene-based MTJJs for engineering band topologies in higher dimensions.

cond-mat.mes-hall↗

Superfluid Stiffness and Flat-Band Superconductivity in Magic-Angle Graphene Probed by cQED

The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moiré systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness of superconducting MATBG via its kinetic inductance. We find the superfluid stiffness to be much larger than expected from conventional Fermi liquid theory; rather, it is comparable to theoretical predictions involving quantum geometric effects that are dominant at the magic angle. The temperature dependence of the superfluid stiffness follows a power-law, which contraindicates an isotropic BCS model; instead, the extracted power-law exponents indicate an anisotropic superconducting gap, whether interpreted within the Fermi liquid framework or by considering quantum geometry of flat-band superconductivity. Moreover, a quadratic dependence of the superfluid stiffness on both DC and microwave current is observed, which is consistent with Ginzburg-Landau theory. Taken together, our findings indicate that MATBG is an unconventional superconductor with an anisotropic gap and strongly suggest a connection between quantum geometry, superfluid stiffness, and unconventional superconductivity in MATBG. The combined DC-microwave measurement platform used here is applicable to the investigation of other atomically thin superconductors.

cond-mat.supr-con↗

Quantum Spin Hall Effect in Magnetic Graphene

A promising approach to attain long-distance coherent spin propagation is accessing topological spin-polarized edge states in graphene. Achieving this without external magnetic fields necessitates engineering graphene band structure, obtainable through proximity effects in van der Waals heterostructures. In particular, proximity-induced staggered potentials and spin-orbit coupling are expected to form a topological bulk gap in graphene with gapless helical edge states that are robust against disorder. In this work, we detect the spin-polarized helical edge transport in graphene at zero external magnetic field, allowed by the proximity of an interlayer antiferromagnet, CrPS$_4$. We show the coexistence of the quantum spin Hall (QSH) states and magnetism in graphene, where the induced spin-orbit and exchange couplings also give rise to a large anomalous Hall (AH) effect. The detection of the QSH states at zero external magnetic field, together with the AH signal that persists up to room temperature, opens the route for practical applications of magnetic graphene in quantum spintronic circuitries.

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