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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 721 records · Page 40Linked to original sources

Two-Fold Anisotropic Superconductivity in Bilayer T$_d$-MoTe$_2$

Noncentrosymmetric 2D superconductors with large spin-orbit coupling offer an opportunity to explore superconducting behaviors far beyond the Pauli limit. One such superconductor, few-layer T$_d$-MoTe$_2$, has large upper critical fields that can exceed the Pauli limit by up to 600%. However, the mechanisms governing this enhancement are still under debate, with theory pointing towards either spin-orbit parity coupling or tilted Ising spin-orbit coupling. Moreover, ferroelectricity concomitant with superconductivity has been recently observed in the bilayer, where strong changes to superconductivity can be observed throughout the ferroelectric transition pathway. Here, we report the superconducting behavior of bilayer T$_d$-MoTe$ _2$ under an in-plane magnetic field, while systematically varying magnetic field angle and out-of-plane electric field strength. We find that superconductivity in bilayer MoTe$_2$ exhibits a two-fold symmetry with an upper critical field maxima occurring along the b-axis and minima along the a-axis. The two-fold rotational symmetry remains robust throughout the entire superconducting region and ferroelectric hysteresis loop. Our experimental observations of the spin-orbit coupling strength (up to 16.4 meV) agree with the spin texture and spin splitting from first-principles calculations, indicating that tilted Ising spin-orbit coupling is the dominant underlying mechanism.

cond-mat.supr-con↗

Evidence for correlated electron pairs and triplets in quantum Hall interferometers

Pairing of electrons is ubiquitous in electronic systems featuring attractive inter-electron interactions, as exemplified in superconductors. Counter-intuitively, it can also be mediated in certain circumstances by the repulsive Coulomb interaction alone. Quantum Hall (QH) Fabry-Pérot interferometers (FPIs) tailored in two-dimensional electron gas under a perpendicular magnetic field has been argued to exhibit such unusual electron pairing seemingly without attractive interaction. Here, we show evidence in graphene QH FPIs revealing not only a similar electron pairing at bulk filling factor nu=2 but also an unforeseen emergence of electron tripling characterized by a fractional Aharonov-Bohm flux period h/3e (h is the Planck constant and e the electron charge) at nu=3. Leveraging a novel plunger-gate spectroscopy, we demonstrate that electron pairing (tripling) involves correlated charge transport on two (three) entangled QH edge channels. This spectroscopy indicates a quantum interference flux-periodicity determined by the sum of the phases acquired by the distinct QH edge channels having slightly different interfering areas. While recent theory invokes the dynamical exchange of neutral magnetoplasmons -- dubbed neutralons -- as mediator for electron pairing, our discovery of three entangled QH edge channels with apparent electron tripling defies understanding and introduces a new three-body problem for interacting fermions.

cond-mat.mes-hall↗

Vanishing bulk heat flow in the nu=0 quantum Hall ferromagnet in monolayer graphene

Under high perpendicular magnetic field and at low temperatures, graphene develops an insulating state at the charge neutrality point. This state, dubbed $ν=0$, is due to the interplay between electronic interactions and the four-fold spin and valley degeneracies in the flat band formed by the $n=0$ Landau level. Determining the ground state of $ν=0$, including its spin and valley polarization, has been a theoretical and experimental undertaking for almost two decades. Here, we present experiments probing the bulk thermal transport properties of monolayer graphene at $ν=0$, which directly probe its ground state and collective excitations. We observe a vanishing bulk thermal transport, in contradiction with the expected ground state, predicted to have a finite thermal conductance even at very low temperature. Our result highlight the need for further investigations on the nature of $ν=0$.

cond-mat.mes-hall↗

Topological electronic crystals in twisted bilayer-trilayer graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form a form of topological electron crystal known as an anomalous Hall crystal. Here, we report the observation of a generalized version of the anomalous Hall crystal in twisted bilayer-trilayer graphene, whose formation is driven by the moire potential. The crystal forms at a band filling factor of one electron per four moiré unit cells ($ν=1/4$) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between $+1$ and $-1$ by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from $ν=1/3$, $1/2$, $2/3$, and $3/2$. The quantum geometry of the folded bands is likely very different from that of the original parent band, enabling possible future discoveries of correlation-driven topological phenomena

cond-mat.mes-hall↗

Optical signatures of interlayer electron coherence in a bilayer semiconductor

Emergent strongly-correlated electronic phenomena in atomically-thin transition metal dichalcogenides are an exciting frontier in condensed matter physics, with examples ranging from bilayer superconductivity~\cite{zhao2023evidence} and electronic Wigner crystals~\cite{smolenski2021signatures,zhou2021bilayer} to the ongoing quest for exciton condensation~\cite{wang2019evidence,ma2021strongly,shi2022bilayer}. Here, we experimentally investigate the properties of indirect excitons in naturally-grown MoS$_2$-homobilayer, integrated in a dual-gate device structure allowing independent control of the electron density and out-of-plane electric field. Under conditions when electron tunneling between the layers is negligible~\cite{pisoni2019absence}, upon electron doping the sample, we observe that the two excitons with opposing dipoles hybridize, displaying unusual behavior distinct from both conventional level crossing and anti-crossing. We show that these observations can be explained by static random coupling between the excitons, which increases with electron density and decreases with temperature. We argue that this phenomenon is indicative of a spatially fluctuating order parameter in the form of interlayer electron coherence, a theoretically predicted many-body state~\cite{zheng1997exchange} that has yet to be unambiguously established experimentally outside of the quantum Hall regime~\cite{sarma2008perspectives,spielman2000resonantly,kellogg2004vanishing,kellogg2002observation,spielman2001observation,fertig1989energy,shi2022bilayer}. Implications of our findings for future experiments and quantum optics applications are discussed.

cond-mat.str-el↗

Moiré exciton polaron engineering via twisted hBN

Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moiré patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 μm to 8.7 μm, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe2 by varying the moiré pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications.

cond-mat.mtrl-sci↗

Manipulating moires by controlling heterostrain in van der Waals devices

Van der Waals (vdW) moires offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in-situ manipulation of moire superlattices via heterostrain control in a vdW device. By straining a graphene layer relative to its hexagonal boron nitride substrate, we modify the shape and size of the moire. Our sliding-based technique achieves uniaxial heterostrain values exceeding 1%, resulting in distorted moires that are larger than those achievable without strain. The stretched moire is evident in transport measurements, resulting in shifted superlattice resistance peaks and Landau fans consistent with an enlarged superlattice unit cell. Electronic structure calculations reveal how heterostrain shrinks and distorts the moire Brillouin zone, resulting in a reduced electronic bandwidth as well as the appearance of highly anisotropic and quasi-1-dimensional Fermi surfaces. Our heterostrain control approach opens a wide parameter space of moire lattices to explore beyond what is possible by twist angle control alone.

cond-mat.mes-hall↗

Excitonic signatures of ferroelectric order in parallel-stacked MoS$_2$

Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS$_2$ using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals a direct correspondence between spin-valley dynamics and stacking order.

cond-mat.mtrl-sci↗

Twisted bilayer graphene for enantiomeric sensing of chiral molecules

Selective sensing of chiral molecules is a key aspect in fields spanning biology, chemistry, and pharmacology. However, conventional optical methods, such as circular dichroism (CD), encounter limitations owing to weak chiral light-matter interactions. Several strategies have been investigated to enhance CD or circularly polarised luminescence (CPL), including superchiral light, plasmonic nanoresonators and dielectric nanostructures. However, a compromise between spatial uniformity and high sensitivity, without requiring specific molecular functionalization, remains a challenge. In this work, we propose a novel approach using twisted bilayer graphene (TBG), a chiral 2D material with a strong CD peak which energy is tunable through the twist angle. By matching the CD resonance of TBG with the optical transition energy of the molecule, we achieve a decay rate enhancement mediated by resonant energy transfer that depends on the electric-magnetic interaction, that is, on the chirality of both the molecules and TBG. This leads to an enantioselective quenching of the molecule fluorescence, allowing to retrieve the molecule chirality from time-resolved photoluminescence measurements. This method demonstrates high sensitivity down to single layer of molecules, with the potential to achieve the ultimate goal of single-molecule chirality sensing, while preserving the spatial uniformity and integrability of 2D heterostructures.

cond-mat.mes-hall↗

Observation of superconducting diode effect in antiferromagnetic Mott insulator $α$-RuCl$_3$

Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realization of superconducting diode effect, the construction of two-dimensional heterostructures of magnets and $s$-wave superconductors is considered to be a promising pathway. In this study, we present our findings of superconducting diode effect manifested in the magnetic Mott insulator $α$-RuCl$_3$. This phenomenon is induced by the proximity effect within a van der Waals heterostructure, consisting of thin $α$-RuCl$_3$/NbSe$_2$ flakes. Through transport property measurements, we have confirmed a weak superconducting gap of 0.2 meV, which is significantly lower than the intrinsic gap of NbSe$_2$(1.2 meV). Upon the application of a weak magnetic field below 70 mT, we observed an asymmetry in the critical currents under positive and negative applied currents. This observation demonstrates a typical superconducting diode effect in the superconducting $α$-RuCl$_3$. The superconducting diode effect and nonreciprocal resistance are observed exclusively when the magnetic field is aligned out-of-plane. This suggests that an Ising-type spin-orbit coupling in the superconducting $α$-RuCl$_3$ may be responsible for the mechanism. Our findings furnish a platform for the exploration of superconducting diode effect via the artificial construction of heterostructures.

cond-mat.supr-con↗

Nonperturbative Nonlinear Transport in a Floquet-Weyl Semimetal

Periodic laser driving, known as Floquet engineering, is a powerful tool to manipulate the properties of quantum materials. Using circularly polarized light, artificial magnetic fields, called Berry curvature, can be created in the photon-dressed Floquet-Bloch states that form. This mechanism, when applied to 3D Dirac and Weyl systems, is predicted to lead to photon-dressed movement of Weyl nodes which should be detectable in the transport sector. The transport response of such a topological light-matter hybrid, however, remains experimentally unknown. Here, we report on the transport properties of the type-II Weyl semimetal T$\mathrm{_d}$-MoTe$_\mathrm{2}$ illuminated by a femtosecond pulse of circularly polarized light. Using an ultrafast optoelectronic device architecture, we observed injection currents and a helicity-dependent anomalous Hall effect whose scaling with laser field strongly deviate from the perturbative laws of nonlinear optics. We show using Floquet theory that this discovery corresponds to the formation of a magnetic Floquet-Weyl semimetal state. Numerical ab initio simulations support this interpretation, indicating that the light-induced motion of the Weyl nodes contributes substantially to the measured transport signals. This work demonstrates the ability to generate large effective magnetic fields ($>$ 30T) with light, which can be used to manipulate the magnetic and topological properties of a range of quantum materials.

cond-mat.mes-hall↗

Anomalous Superconductivity in Twisted MoTe2 Nanojunctions

Introducing superconductivity in topological materials can lead to innovative electronic phases and device functionalities. Here, we present a new strategy for quantum engineering of superconducting junctions in moire materials through direct, on-chip, and fully encapsulated 2D crystal growth. We achieve robust and designable superconductivity in Pd-metalized twisted bilayer molybdenum ditelluride (MoTe2) and observe anomalous superconducting effects in high-quality junctions across ~ 20 moire cells. Surprisingly, the junction develops enhanced, instead of weakened, superconducting behaviors, exhibiting fluctuations to a higher critical magnetic field compared to its adjacent Pd7MoTe2 superconductor. Additionally, the critical current further exhibits a striking V-shaped minimum at zero magnetic field. These features are unexpected in conventional Josephson junctions and indeed absent in junctions of natural bilayer MoTe2 created using the same approach. We discuss implications of these observations, including the possible formation of mixed even- and odd-parity superconductivity at the moire junctions. Our results also demonstrate a pathway to engineer and investigate superconductivity in fractional Chern insulators.

cond-mat.supr-con↗

Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures

We present a benchmarking protocol that combines the characterization of boron nitride (BN) crystals and films with the evaluation of the electronic properties of graphene on these substrates. Our study includes hBN crystals grown under different conditions and scalable BN films deposited by either chemical or physical vapor deposition (CVD or PVD). We explore the complete process from boron nitride growth, over its optical characterization by time-resolved cathodoluminescence (TRCL), to the optical and electronic characterization of graphene by Raman spectroscopy after encapsulation and Hall bar processing. Within our benchmarking protocol we achieve a homogeneous electronic performance within each Hall bar device through a fast and reproducible processing routine. We find that a free exciton lifetime of 1 ns measured on as-grown hBN crystals by TRCL is sufficient to achieve high graphene room temperature charge carrier mobilities of 80,000 cm$^2$/(Vs) at a carrier density of |n| = 10$^{12}$ cm$^{-2}$, while respective exciton lifetimes around 100 ps yield mobilities up to 30,000 cm$^2$/(Vs). For scalable PVD-grown BN films, we measure carrier mobilities exceeding 10,000 cm$^2$/(Vs) which correlates with a graphene Raman 2D peak linewidth of 22 cm$^{-1}$. Our work highlights the importance of the Raman 2D linewidth of graphene as a critical metric that effectively assesses the interface quality (i.e. surface roughness) to the BN substrate, which directly affects the charge carrier mobility of graphene. Graphene 2D linewidth analysis is suitable for all BN substrates and is particularly advantageous when TRCL or BN Raman spectroscopy cannot be applied to specific BN materials such as amorphous or thin films. This underlines the superior role of spatially-resolved spectroscopy in the evaluation of BN crystals and films for the use of high-mobility graphene devices.

cond-mat.mtrl-sci↗

Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors

Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices.

cond-mat.mes-hall↗

Spectroscopic evidence for a first-order transition to the orbital Fulde-Ferrell-Larkin-Ovchinnikov state

A conventional superconducting state may be replaced by another dissipationless state hosting Cooper pairs with a finite momentum, leaving thermodynamic footprints for such a phase transition. Recently, a novel type of finite momentum pairing, so-called orbital Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, has been proposed to occur in spin-orbit coupled superconductors such as bilayer $2\mathrm{H-NbSe_{2}}$. So far, a thermodynamic demonstration, which is key for establishing this exotic phase, has been lacking. Here, we reveal a first-order quantum phase transition to the orbital FFLO state in tunneling spectroscopic measurements on multilayer $2\mathrm{H-NbSe_{2}}$. The phase transition manifests itself as a sudden enhancement of the superconducting gap at an in-plane magnetic field $B_{//}$ well below the upper critical field. Furthermore, this transition shows prominent hysteresis by sweeping $B_{//}$ back and forth and quickly disappears once the magnetic field is tilted away from the sample plane by less than one degree. We obtain a comprehensive phase diagram for the orbital FFLO state and compare it with the theoretical calculation that takes into account the rearrangement of Josephson vortices. Our work elucidates the microscopic mechanism for the emergence of the orbital FFLO state.

cond-mat.supr-con↗

Residual quantum coherent electron transport in doped graphene leads

Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to high doping near the contacts. While this technique is widely used and has demonstrated its usefulness numerous times, little is known about the actual transport properties of the doped graphene leads. Here, we present an experiment probing those properties in the quantum Hall regime at low temperature and high magnetic field, showing that electronic phase coherence and transport chirality are preserved, despite the significant charge equilibration occurring at the edges of the leads. Our work yields a finer understanding of the properties of the doped graphene leads, allowing for improvements of the contact quality that can be applied to other two-dimensional materials.

cond-mat.mes-hall↗

Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl$_3$

Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically-induced transient stray fields in few-layer, antiferromagnetic CrCl$_3$. We discover that exciton recombination enhances the in-plane magnetization of the CrCl$_3$ layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl$_3$ with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens a novel experimental platform for studying optically-induced, transient magnetism in condensed matter systems.

cond-mat.mtrl-sci↗

Terahertz phonon engineering with van der Waals heterostructures

Phononic engineering at gigahertz (GHz) frequencies form the foundation of microwave acoustic filters, acousto-optic modulators, and quantum transducers. Terahertz (THz) phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite its potential, methods for engineering THz phonons have been limited due to the challenges of achieving the required material control at sub-nanometer precision and efficient phonon coupling at THz frequencies. Here, we demonstrate efficient generation, detection, and manipulation of THz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We employ few-layer graphene (FLG) as an ultrabroadband phonon transducer, converting femtosecond near-infrared pulses to acoustic phonon pulses with spectral content up to 3 THz. A monolayer WSe$_2$ is used as a sensor, where high-fidelity readout is enabled by the exciton-phonon coupling and strong light-matter interactions. Combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we perform THz phononic spectroscopy. Using this platform, we demonstrate high-Q THz phononic cavities and show that a monolayer WSe$_2$ embedded in hexagonal boron nitride (hBN) can efficiently block the transmission of THz phonons. By comparing our measurements to a nanomechanical model, we obtain the force constants at the heterointerfaces. Our results could enable THz phononic metamaterials for ultrabroadband acoustic filters and modulators, and open novel routes for thermal engineering.

cond-mat.mes-hall↗