arXiv subjects

Kun-Rok Jeon

Publications and source records attributed to Kun-Rok Jeon.

13 recordsLinked to original sources

arXiv2026

Decoupling Josephson Coupling and Supercurrent Nonreciprocity in Twisted NbSe2/NbSe2 van der Waals Junctions

The microscopic origin of supercurrent nonreciprocity in van der Waals Josephson junctions remains under active debate, particularly regarding the role of twist-angle engineering in layered superconductors. Here, we investigate superconducting transport in twisted NbSe2/NbSe2 vertical Josephson junctions fabricated by dry transfer with controlled crystallographic alignment and chemically clean interfaces. High-resolution transmission electron microscopy is employed to directly determine the twist angle and assess interface quality. While the Josephson coupling strength exhibits a pronounced dependence on twist angle, with characteristic voltages maximized near crystallographically equivalent orientations and suppressed at intermediate angles, the supercurrent diode efficiency remains negligibly small and shows no systematic twist-angle dependence. In contrast, enhanced diode-like responses emerge only in weakly coupled junctions exhibiting interfacial disorder and reduced transparency. Deliberate interface degradation further amplifies the apparent nonreciprocity, yielding diode efficiencies approaching 30% together with an irregular magnetic-field-strength dependence. These results establish a clear decoupling between Josephson coupling and supercurrent nonreciprocity in twisted NbSe2/NbSe2 junctions. Our findings identify interface disorder, rather than twist-angle-controlled momentum matching, as the dominant origin of the observed diode response and provide a critical benchmark for interpreting nonreciprocal superconducting transport in van der Waals Josephson devices.

cond-mat.supr-con↗

arXiv2025

Cryogenic Magnetization Dynamics in Chemically Stabilized, Tensile-Strained Ultrathin Yttrium Iron Garnets with Tunable Magnetic Anisotropy

We report an interfacial chemical stability-driven reduction of low-temperature damping losses in tensile-strained, ultrathin Y3Fe5O12 (YIG) films grown by pulsed laser deposition, exhibiting ultralow damping constants and tunable magnetic anisotropy. Comparative broadband FMR measurements show that tensile-strained YIG films on Gd3Sc2Ga3O12 (GSGG) retain measurable damping even at nanometer thicknesses and cryogenic temperatures down to 2 K, outperforming relaxed films on Gd3Ga5O12. Based on static magnetometry measurements along with microstructural and compositional analyses, we attribute these enhanced dynamic properties to the suppression of interdiffusion across the YIG/GSGG interface, resulting from enhanced chemical stability and favorable growth kinetics by the presence of Sc. Our findings highlight the importance of chemical and kinetic factors in achieving few-nanometer-thick YIG film with negligible low-temperature damping dissipation and perpendicular magnetic anisotropy for cryogenic spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Interferometric evidence of non-volatile anomalous phase shifts in exchange-spin-split Josephson supercurrent diodes

The recent realization of zero-field, polarity-reversible supercurrent rectification in proximity-magnetized Rashba-type Pt Josephson junctions (JJs) enables the development of superconducting logic circuits and cryogenic memory applications. Here, we demonstrate a non-volatile anomalous phase shift {\phi}_0 directly probed via superconducting quantum interferometry, providing phase-sensitive evidence of spontaneous time-reversal symmetry breaking in these Rashba-type systems. By replacing the Pt barrier with 5d or 4d element layers exhibiting different (para-)magnetic susceptibilities, spin-orbit coupling strengths, and electronic band structures, we elucidate the role of proximity effects in governing zero-field diode behavior. Ta (W) JJs exhibit zero-field diode efficiencies of ~17% (~5%) at 2 K, which are slightly (significantly) lower than those of Pt JJs. Notably, the diode polarity in Ta and W JJs is reversed relative to Pt JJs. Combined with the large zero-field diode efficiency (~15% at 2 K) observed in highly magnetic-susceptible Pd JJs, these results show that non-volatile {\phi}_0 and, consequently, zero-field diode performance can be tuned through proximity engineering of interfacial magnetic ordering and Rashba spin-orbit interaction.

cond-mat.supr-con↗

arXiv2023

Intrinsic supercurrent non-reciprocity coupled to the crystal structure of a van der Waals Josephson barrier

Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting and Josephson diodes, a key ingredient for future non-dissipative quantum devices, have recently been realized. Only a few examples of a vertical superconducting diode effect have been reported and its mechanism, especially whether intrinsic or extrinsic, remains elusive. Here we demonstrate a substantial supercurrent non-reciprocity in a van der Waals vertical Josephson junction formed with a Td-WTe2 barrier and NbSe2 electrodes that clearly reflects the intrinsic crystal structure of Td-WTe2. The Josephson diode efficiency increases with the Td-WTe2 thickness up to critical thickness, and all junctions, irrespective of the barrier thickness, reveal magneto-chiral characteristics with respect to a mirror plane of Td-WTe2. Our results, together with the twist-angle-tuned magneto-chirality of a Td-WTe2 double-barrier junction, show that two-dimensional materials promise vertical Josephson diodes with high efficiency and tunability.

cond-mat.supr-con↗

arXiv2021

Role of two-dimensional Ising superconductivity in the non-equilibrium quasiparticle spin-to-charge conversion efficiency

Non-equilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here non-local magnon devices to examine how such 2D Ising superconductivity affects the conversion efficiency of magnon spin to quasiparticle charge in superconducting flakes of 2H-NbSe2 transferred onto ferrimagnetic insulating Y3Fe5O12. Comparison with a reference device based on a conventionally paired superconductor shows that the Y3Fe5O12-induced in-plane (IP) exchange spin-splitting in the NbSe2 flake is hindered by its inherent out-of-plane (OOP) spin-orbit-field, which, in turn, limits the transition-state enhancement of the spin-to-charge conversion efficiency. Our out-of-equilibrium study highlights the significance of symmetry matching between underlying Cooper pairs and exchange-induced spin-splitting for the giant transition-state spin-to-charge conversion and may have implications towards proximity-engineered spin-polarized triplet pairing via tuning the relative strength of IP exchange and OOP spin-orbit fields in ferromagnetic insulator/2D Ising SC bilayers.

cond-mat.supr-con↗

arXiv2020

Giant transition-state enhancement of quasiparticle spin-Hall effect in an exchange-spin-split superconductor detected by non-local magnon spin-transport

Although recent experiments and theories have shown a variety of exotic transport properties of non-equilibrium quasiparticles (QPs) in superconductor (SC)-based devices with either Zeeman or exchange spin-splitting, how QP interplays with magnon spin currents remains elusive. Here, using non-local magnon spin-transport devices where a singlet SC (Nb) on top of a ferrimagnetic insulator (Y3Fe5O12) serves as a magnon spin detector, we demonstrate that the conversion efficiency of magnon spin to QP charge via inverse spin-Hall effect (iSHE) in such an exchange-spin-split SC can be greatly enhanced by up to 3 orders of magnitude compared with that in the normal state, particularly when its interface superconducting gap matches the magnon spin accumulation. Through systematic measurements with varying the current density and SC thickness, we identify that superconducting coherence peaks and exchange spin-splitting of the QP density-of-states, yielding a larger spin excitation while retaining a modest QP charge-imbalance relaxation, are responsible for the giant QP iSHE. The latter exchange-field-modified QP relaxation is experimentally proved by spatially resolved measurements with varying the separation of electrical contacts on the spin-split Nb.

cond-mat.mes-hall↗

arXiv2019

Tunable pure spin supercurrents and the demonstration of a superconducting spin-wave device

Recent ferromagnetic resonance experiments and theory of Pt/Nb/Ni8Fe2 proximity-coupled structures strongly suggest that spin-orbit coupling (SOC) in Pt in conjunction with a magnetic exchange field in Ni8Fe2 are the essential ingredients to generate a pure spin supercurrent channel in Nb. Here, by substituting Pt for a perpendicularly magnetized Pt/Co/Pt spin-sink, we are able to demonstrate the role of SOC, and show that pure spin supercurrent pumping efficiency across Nb is tunable by controlling the magnetization direction of Co. By inserting a Cu spacer with weak SOC between Nb and Pt/(Co/Pt) spin-sink, we also prove that Rashba type SOC is key for forming and transmitting pure spin supercurrents across Nb. Finally, by engineering these properties within a single multilayer structure, we demonstrate a prototype superconducting spin-wave (SW) device in which lateral SW propagation is gateable via the opening or closing of a vertical pure spin supercurrent channel in Nb.

cond-mat.mes-hall↗

arXiv2019

Abrikosov vortex nucleation and its detrimental effect on superconducting spin pumping in Pt/Nb/Ni80Fe20/Nb/Pt proximity structures

We report Abrikosov vortex nucleation in Pt/Nb/Ni80Fe20/Nb/Pt proximity-coupled structures under oblique ferromagnetic resonance (FMR) that turns out to be detrimental to superconducting spin pumping. By measuring an out-of-plane field-angle {\theta}H dependence and comparison with Pt-absent control samples, we show that as {\theta}H increases, the degree of enhancement (suppression) of spin pumping efficiency in the superconducting state for the Pt-present (Pt-absent) sample diminishes and it reverts to the normal state value at {\theta}H = 90{\deg}. This can be explained in terms of a substantial out-of-plane component of the resonance field for the Ni80Fe20 layer (with in-plane magnetization anisotropy and high aspect ratio) that approaches the upper critical field of the Nb, turning a large fraction of the singlet superconductor volume into the normal state.

cond-mat.mes-hall↗

arXiv2018

Effect of Meissner screening and trapped magnetic flux on magnetization dynamics in thick Nb/Ni80Fe20/Nb trilayers

We investigate the influence of Meissner screening and trapped magnetic flux on magnetization dynamics for a Ni80Fe20 film sandwiched between two thick Nb layers (100 nm) using broadband (5-20 GHz) ferromagnetic resonance (FMR) spectroscopy. Below the superconducting transition Tc of Nb, significant zero-frequency line broadening (5-6 mT) and DC resonance field shift (50 mT) to a low field are both observed if the Nb thickness is comparable to the London penetration depth of Nb films (>= 100 nm). We attribute the observed peculiar behaviors to the increased incoherent precession near the Ni80Fe20/Nb interface and the effectively focused magnetic flux in the middle Ni80Fe20 caused by strong Meissner screening and (defect-)trapped flux of the thick adjacent Nb layers. This explanation is supported by static magnetic properties of the samples and comparison with FMR data on thick Nb/Ni80Fe20 bilayers. Great care should therefore be taken in the analysis of FMR response in ferromagnetic Josephson structures with thick superconductors, a fundamental property for high-frequency device applications of spin-polarized supercurrents.

cond-mat.mes-hall↗

arXiv2013

Thermal spin injection and accumulation in CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation

cond-mat.mes-hall↗

arXiv2012

Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2({\theta}) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe.

cond-mat.mes-hall↗

arXiv2011

Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.

cond-mat.mes-hall↗

arXiv2011

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process.

cond-mat.mes-hall↗