arXiv subjects

Marco Colangelo

Publications and source records attributed to Marco Colangelo.

At least 19 recordsLinked to original sources

arXiv2026

Superconducting Nanowire Based Surface Acoustic Wave Transduction

This work presents the demonstration of a superconducting niobium nitride (NbN) nanowire surface acoustic wave transducer, enabling a cryogenic acoustic delay line in scandium aluminum nitride (ScAlN) on silicon carbide (SiC). The superconducting nanowire slows the effective electromagnetic phase velocity along the acoustic wave propagation axis to match that of the surface acoustic wave, such that the co-propagating electrical signal continuously and coherently drives the acoustic wave along the length of the wire. The operating principle is validated through coupled full-wave electromagnetic and piezoelectric finite element method simulations and then experimentally confirmed through demonstration of a 500 {\mu}m delay line exhibiting a 125 ns time delay, with broadband transduction characterized across 0.5-20 GHz at 0.9 K, establishing superconducting nanowires as an emerging class of acoustic transducers with direct implications for cryogenic signal processing and integration with superconducting quantum circuits.

physics.app-ph↗

arXiv2026

Geometry-enabled magnetic resilience in superconducting nanowire single-photon detectors

While magnetic fields and superconductors are both central to classical and quantum technologies, their combined use is often challenging, as magnetic fields significantly affect superconducting device performance. In superconducting nanowire single-photon detectors (SNSPDs), magnetic fields drastically reduce detection efficiencies, hampering their application in magnetically-active classical and quantum photonics. Here, we systematically characterize the performance of NbTiN SNSPDs under magnetic fields and show the enhancement of their intrinsic detection efficiency (IDE) at lower bias currents and its suppression at higher currents. This leads to SNSPD performance degradation through reduced or disappearing saturation plateaus. We show that the magnitude of this degradation is highly dependent on nanowire width and demonstrate width-optimized SNSPDs with saturating IDE for a wide range of photon energies under application-relevant magnetic fields. Minimizing degradation in superconducting devices under magnetic fields enables applications like detector-integrated spin-optic and atomic quantum processors, high-sensitivity magnetometry, and quantum transduction.

cond-mat.supr-con↗

arXiv2025

High-Fidelity Control of a Strongly Coupled Electro-Nuclear Spin-Photon Interface

Long distance quantum networking requires combining efficient spin-photon interfaces with long-lived local memories. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, containing an electronic spin-photon interface and dopant nuclear spin memory. Recent work has demonstrated state-of-the-art performance in spin-photon coupling and spin-spin entanglement. However, coupling between the electron and nuclear spins introduces a phase kickback during optical excitation that limits the utility of the nuclear memory. Here, we propose using the large hyperfine coupling of SnV-117 to operate the device at zero magnetic field in a regime where the memory is insensitive to optical excitation. We further demonstrate ground state spin control of a SnV-117 color center integrated in a photonic integrated circuit, showing 97.8% gate fidelity and 2.5 ms coherence time for the memory spin level. This shows the viability of the zero-field protocol for high fidelity operation, and lays the groundwork for building quantum network nodes with SnV-117 devices.

quant-ph↗

arXiv2025

Scalable Superconducting Nanowire Memory Array with Row-Column Addressing

Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations, their large footprint poses a significant barrier to scaling. Nanowire-based superconducting memory cells offer a compact alternative, but high error rates have hindered their integration into large arrays. In this work, we present a superconducting nanowire memory array designed for scalable row-column operation, achieving a functional density of 2.6$\,$Mb/cm$^{2}$. The array operates at $1.3\,$K, where we implement and characterize multi-flux quanta state storage and destructive readout. By optimizing write and read pulse sequences, we minimize bit errors while maximizing operational margins in a $4\times 4$ array. Circuit-level simulations further elucidate the memory cell's dynamics, providing insight into performance limits and stability under varying pulse amplitudes. We experimentally demonstrate stable memory operation with a minimum bit error rate of $10^{-5}$. These results suggest a promising path for scaling superconducting nanowire memories to high-density architectures, offering a foundation for energy-efficient memory in superconducting electronics.

physics.app-ph↗

arXiv2024

Single-photon detectors on arbitrary photonic substrates

Detecting non-classical light is a central requirement for photonics-based quantum technologies. Unrivaled high efficiencies and low dark counts have positioned superconducting nanowire single photon detectors (SNSPDs) as the leading detector technology for fiber and integrated photonic applications. However, a central challenge lies in their integration within photonic integrated circuits regardless of material platform or surface topography. Here, we introduce a method based on transfer printing that overcomes these constraints and allows for the integration of SNSPDs onto arbitrary photonic substrates. We prove this by integrating SNSPDs and showing through-waveguide single-photon detection in commercially manufactured silicon and lithium niobate on insulator integrated photonic circuits. Our method eliminates bottlenecks to the integration of high-quality single-photon detectors, turning them into a versatile and accessible building block for scalable quantum information processing.

quant-ph↗

arXiv2024

Localized Topological States beyond Fano Resonances via Counter-Propagating Wave Mode Conversion in Piezoelectric Microelectromechanical Devices

A variety of scientific fields like proteomics and spintronics have created a new demand for on-chip devices capable of sensing parameters localized within a few tens of micrometers. Nano and microelectromechanical systems (NEMS/MEMS) are extensively employed for monitoring parameters that exert uniform forces over hundreds of micrometers or more, such as acceleration, pressure, and magnetic fields. However, they can show significantly degraded sensing performance when targeting more localized parameters, like the mass of a single cell. To address this challenge, we present a new MEMS device that leverages the destructive interference of two topological radiofrequency (RF) counter-propagating wave modes along a piezoelectric Aluminum Scandium Nitride (AlScN) Su-Schrieffer-Heeger (SSH) interface. The reported MEMS device opens up opportunities for further purposes, including achieving more stable frequency sources for communication and timing applications.

physics.app-ph↗

arXiv2024

A superconducting full-wave bridge rectifier

Superconducting thin-film electronics are attractive for their low power consumption, fast operating speeds, and ease of interface with cryogenic systems such as single-photon detector arrays, and quantum computing devices. However, the lack of a reliable superconducting two-terminal asymmetric device, analogous to a semiconducting diode, limits the development of power-handling circuits, fundamental for scaling up these technologies. Existing efforts to date have been limited to single-diode proofs of principle and lacked integration of multiple controllable and reproducible devices to form complex circuits. Here, we demonstrate a robust superconducting diode with tunable polarity using the asymmetric vortex surface barrier in niobium nitride micro-bridges, achieving a 43% peak rectification efficiency, and showing half-wave rectification up to 120 MHz. We then realize and integrate several such diodes into a bridge rectifier circuit on a single microchip that performs continuous full-wave rectification up to 3 MHz and AC-to-DC conversion of a 50 MHz signal in periodic bursts with an estimated peak power efficiency of 50%.

physics.app-ph↗

arXiv2024

A scalable cavity-based spin-photon interface in a photonic integrated circuit

A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin-photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin-photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum micro-chiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ~7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way towards building large-scale quantum repeaters.

quant-ph↗

arXiv2024

Improvements of readout signal integrity in mid-infrared superconducting nanowire single photon detectors

Superconducting nanowire single-photon detectors (SNSPDs) with high timing resolution and low background counts in the mid infrared (MIR) have the potential to open up numerous opportunities in fields such as exoplanet searches, direct dark matter detection, physical chemistry, and remote sensing. One challenge in pushing SNSPD sensitivity to the MIR is a decrease in the signal-to-noise ratio (SNR) of the readout signal as the critical currents become increasingly smaller. We overcome this trade-off with a new device architecture that employs impedance matching tapers and superconducting nanowire avalanche photodetectors to demonstrate increased SNR while maintaining saturated internal detection efficiency at 7.4 {\mu}m and getting close to saturation at 10.6 {\mu}m. This work provides a novel platform for pushing SNSPD sensitivity to longer wavelengths while improving the scalability of the readout electronics.

physics.ins-det↗

arXiv2024

Parameter extraction for a superconducting thermal switch (hTron) SPICE model

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector (SNSPD) readout. Previously, the hTron was modeled using traditional finite-element methods (FEM), which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Our model provides circuit designers with a tool to help understand the hTron's behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

physics.app-ph↗

arXiv2023

Coherent control of a superconducting qubit using light

Quantum communications technologies require a network of quantum processors connected with low loss and low noise communication channels capable of distributing entangled states. Superconducting microwave qubits operating in cryogenic environments have emerged as promising candidates for quantum processor nodes. However, scaling these systems is challenging because they require bulky microwave components with high thermal loads that can quickly overwhelm the cooling power of a dilution refrigerator. Telecommunication frequency optical signals, meanwhile, can be fabricated in significantly smaller form factors while avoiding challenges due to high signal loss, noise sensitivity, and thermal loads due to their high carrier frequency and propagation in silica optical fibers. Transduction of information via coherent links between optical and microwave frequencies is therefore critical to leverage the advantages of optics for superconducting microwave qubits, while also enabling superconducting processors to be linked with low-loss optical interconnects. Here, we demonstrate coherent optical control of a superconducting qubit. We achieve this by developing a microwave-optical quantum transducer that operates with up to 1.18% conversion efficiency with low added microwave noise, and demonstrate optically-driven Rabi oscillations in a superconducting qubit.

quant-ph↗

arXiv2023

Nanocryotron ripple counter integrated with a superconducting nanowire single-photon detector for megapixel arrays

Decreasing the number of cables that bring heat into the cryostat is a critical issue for all cryoelectronic devices. Especially, arrays of superconducting nanowire single-photon detectors (SNSPDs) could require more than $10^6$ readout lines. Performing signal processing operations at low temperatures could be a solution. Nanocryotrons, superconducting nanowire three-terminal devices, are good candidates for integrating sensing and electronics on the same technological platform as SNSPDs in photon-counting applications. In this work, we demonstrated that it is possible to read out, process, encode, and store the output of SNSPDs using exclusively superconducting nanowires. In particular, we present the design and development of a nanocryotron ripple counter that detects input voltage spikes and converts the number of pulses to an $N$-digit value. The counting base can be tuned from 2 to higher values, enabling higher maximum counts without enlarging the circuit. As a proof-of-principle, we first experimentally demonstrated the building block of the counter, an integer-$N$ frequency divider with $N$ ranging from 2 to 5. Then, we demonstrated photon-counting operations at 405 nm and 1550 nm by coupling an SNSPD with a 2-digit nanocryotron counter partially integrated on-chip. The 2-digit counter could operate in either base 2 or base 3 with a bit error rate lower than $2 \times 10^{-4}$ and a count rate of $10^7\,$s$^{-1}$. We simulated circuit architectures for integrated readout of the counter state, and we evaluated the capabilities of reading out an SNSPD megapixel array that would collect up to $10^{12}$ counts per second. The results of this work, combined with our recent publications on a nanocryotron shift register and logic gates, pave the way for the development of nanocryotron processors, from which multiple superconducting platforms may benefit.

physics.app-ph↗

arXiv2023

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel $1 mm^2$ superconducting microwire single photon detectors (SMSPDs) with $1\,\mathrm{\mu m}$-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with $cm^2$-scale active area and beyond.

physics.ins-det↗

arXiv2023

Cavity-enhanced single artificial atoms in silicon

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing.

quant-ph↗

arXiv2023

A Superconducting Nanowire Binary Shift Register

We present a design for a superconducting nanowire binary shift register, which stores digital states in the form of circulating supercurrents in high-kinetic-inductance loops. Adjacent superconducting loops are connected with nanocryotrons, three terminal electrothermal switches, and fed with an alternating two-phase clock to synchronously transfer the digital state between the loops. A two-loop serial-input shift register was fabricated with thin-film NbN and achieved a bit error rate less than $10^{-4}$, operating at a maximum clock frequency of $83\,\mathrm{MHz}$ and in an out-of-plane magnetic field up to $6\,\mathrm{mT}$. A shift register based on this technology offers an integrated solution for low-power readout of superconducting nanowire single photon detector arrays, and is capable of interfacing directly with room-temperature electronics and operating unshielded in high magnetic field environments.

physics.app-ph↗

arXiv2022

Reduced ITO for Transparent Superconducting Electronics

Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm.

physics.app-ph↗

arXiv2022

A Nanocryotron Memory and Logic Family

The development of superconducting electronics based on nanocryotrons has been limited so far to few-device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show $10^{-4}$ bit error rates with above $20\,\%$ margins up to $50\,$MHz and the possibility of operating under the effect of a perpendicular $36\,$mT magnetic field, with $30\,\%$ margins at $10\,$MHz. Additionally, we designed and measured an equivalent delay flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.

physics.app-ph↗

arXiv2022

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer

Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material beyond pure electrostatics. Conversely, reversible, volatile and electrostatic modulation is pivotal in the reliable design and operation of novel device concepts enabled by the ultrahigh induced charge densities attainable via ionic gating. Here we demonstrate a simple and effective method to achieve reversible and volatile gating of surface-sensitive ultrathin niobium nitride films via controlled oxidation of their surface. The resulting niobium oxide encapsulation layer exhibits a capacitance comparable to that of non-encapsulated ionic transistors, withstands gate voltages beyond the electrochemical stability window of the gate electrolyte, and enables a fully-reversible tunability of both the normal-state resistivity and the superconducting transition temperature of the encapsulated films. Our approach should be transferable to other materials and device geometries where more standard encapsulation techniques are not readily applicable.

cond-mat.supr-con↗