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Mark Covington

Publications and source records attributed to Mark Covington.

6 recordsLinked to original sources

Superconducting Flux Memory for Cryogenic Applications

We report the development of flux memory for use with superconducting circuits. This technology stores persistent currents in superconducting loops on-chip to be used to provide flux biasing for superconducting circuits, like qubits. We developed three types of flux memory and draw comparisons among them for circuit design. We demonstrate the utility of flux memory by using an in-situ flux detector and characterize each approach and further demonstrate that once flux is set in a memory cell, benchtop DC control sources can be powered off, leaving the on-chip flux bias in place. We propose that flux memory can be arranged in a two-dimensional configuration to multiplex control signals and reduce how line counts scale (N^2 devices -> 2N control lines), and our experimental results pave the path to the proposed scalability. We demonstrate the use of flux memory to flux bias a transmon qubit and show the tunability of the qubit state to a target frequency which remained stable on-chip for 20 hours.

quant-ph

Transmon Phase Gates Controlled by Superconducting Soliton DAC

We introduce a superconducting digital-to-analog converter (DAC) that filters control noise, provides native multiplexing, performs quantum gates in nanoseconds, and can be controlled by CMOS. This is achieved by transducing a trapezoidal drive pulse into a superconducting soliton, which is then held in the DAC load loop, applying flux to a mutually-coupled superconducting qubit or gate coupler. The analog flux output by the DAC can be easily controlled by varying the soliton hold time, or with a DC-biased tunable DAC-qubit coupler, allowing the DAC to perform a fixed-time, high-fidelity gate that's robust to fabrication variance or flux offsets in the quantum circuit. Our initial demonstration shows that the DAC can successfully perform 5.6 ns S-gates on transmons. We measure the DAC-induced quantum state excitation probability per gate to be 0.05%, and find that the DAC-induced relaxation rate from the qubit 1 state is below the intrinsic T1 rate limit of the transmon. Quantum simulations show qualitative agreement with the measured data, and predict that the DAC excitation rate can be lowered 10 times further by overdamping the Josephson junction (JJ) in the DAC load loop. may be limited by a Interleaved Randomized Benchmarking (IRB) sequences on an observer qubit reveal that, when scaling to many qubits, the DAC's performance may be limited by a non-local, DAC-induced phase error of 1.6% per gate, appearing in ancilla qubits that are not directly coupled to any of the 30 DACs on the chip. We discuss strategies for future layouts of multi-DAC chips that focus on mitigating the source of these non-local, high-frequency electromagnetic interactions (EMI), and how to incorporate a DC-tunable coupler for phase correction.

quant-ph

Time domain detection of pulsed spin torque damping reduction

Combining multiple ultrafast spin torque impulses with a 5 nanosecond duration pulse for damping reduction, we observe time-domain precession which evolves from an initial 1 ns duration transient with changing precessional amplitude to constant amplitude oscillations persisting for over 2 ns. These results are consistent with relaxation of the transient trajectories to a stable orbit with nearly zero damping. We find that in order to observe complete damping cancellation and the transient behavior in a time domain sampling measurement, a short duration, fast rise-time pulse is required to cancel damping without significant trajectory dephasing.

cond-mat.mes-hall

Effect of resistance feedback on spin torque-induced switching of nanomagnets

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of MTJ's, and show that magnetization switching is only affected by capacitive shunting in the pF range.

cond-mat.mes-hall

Macrospin model of incubation delay due to the field-like spin transfer torque

We show that the absence of pre-switching oscillations ("incubation delay") in magnetic tunnel junctions can be explained within the macrospin model by a sizable field-like component of the spin-transfer torque. It is further suggested that measurements of the voltage dependence of tunnel junction switching time in the presence of external easy axis magnetic fields can be used to determine the magnitude and voltage dependence of the field-like torque.

cond-mat.mes-hall

Coherent control of nanomagnet dynamics via ultrafast spin torque pulses

The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization dynamics and reversal occur coherently over a timescale of nanoseconds. By adjusting the shape of a spin torque waveform over a timescale comparable to the free precession period (100-400 ps), control of the magnetization dynamics in nanopillar devices should be possible. Here we report coherent control of the free layer magnetization in nanopillar devices using a pair of current pulses as narrow as 30 ps with adjustable amplitudes and delay. We show that the switching probability can be tuned over a broad range by timing the current pulses with the underlying free-precession orbits, and that the magnetization evolution remains coherent for more than 1 ns even at room temperature. Furthermore, we can selectively induce transitions along free-precession orbits and thereby manipulate the free magnetic moment motion. We expect this technique will be adopted for further elucidating the dynamics and dissipation processes in nanomagnets, and will provide an alternative for spin torque driven spintronic devices, such as resonantly pumping microwave oscillators, and ultimately, for efficient reversal of memory bits in magnetic random access memory (MRAM).

cond-mat.other