arXiv subjects

Michael Spencer

Publications and source records attributed to Michael Spencer.

3 recordsLinked to original sources

arXiv2026

Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics

We report the properties of hexagonal (space group P6/mmm) scandium diboride ($\mathrm{ScB}_2$) single crystals grown by a laser diode floating zone method at growth rates of ~1mm/hr under B-rich conditions with (002) rocking curve widths $Δω$=38'' approaching the quality of commercial SiC/GaN substrates. Lattice expansion measurements reveal matching to $\mathrm{Al_{0.55}Ga_{0.45}N}$ with a coefficient of thermal expansion ~5ppm/K at typical AlGaN growth temperatures, enabling thick AlGaN layers for ultra-wide bandgap (UWBG) power electronics >1kV. We measure semi-metallic room temperature resistivity ~15$μΩ$ cm, climbing to ~93$μΩ$ cm at 773K with a $T^2$ dependence effectively eliminating substrate parasitic resistance, the limiting factor in exploiting the full potential of UWBG. The Debye temperature $θ_{D,ScB_2}$ from heat capacity and lattice expansion is ~850K well matched to $θ_{D,ScB_2}$, but lower than the 1100K measured for Sc-rich growth conditions. We discuss Debye matching as a key substrate codesign criterion providing significant overlap in phonon modes for heat removal and thermal matching during AlGaN growth. The competitive thermal conductivity at room temperature 53W/mK is half that from full first principles calculations, a discrepancy we attribute to the presence of Sc-vacancies generated by B-rich growth. while the resistivity is ~2x the theoretical value, indicating that both electrons and phonons play equal role in thermal transport. The smooth ~2.5nm rms roughness surface enables advanced heat removal modalities through engineered phonon bridges and phonon polaritons in $\mathrm{ScB}_2$/AlGaN interfacial heterostructures, potentially allowing ~10-100x increase in power handling over state-of-the-art GaN/SiC.

cond-mat.mtrl-sci↗

arXiv2025

Departures from Standard Disk Predictions in Intensive Ground-Based Monitoring of Three AGN

We present ground-based, multi-band light curves of the AGN Mrk~509, NGC\,4151, and NGC\,4593 obtained contemporaneously with \sw\, monitoring. We measure cross-correlation lags relative to \sw\, UVW2 (1928~Å) and test the standard prediction for disk reprocessing, which assumes a geometrically thin, optically thick accretion disk where continuum interband delays follow the relation $ τ(λ) \propto λ^{4/3} $. For Mrk~509 the 273-d \sw\, campaign gives well-defined lags that increase with wavelength as $τ(λ)\proptoλ^{2.17\pm0.2}$, steeper than the thin-disk prediction, and the optical lags are a factor of $\sim5$ longer than expected for a simple disk-reprocessing model. This ``disk-size discrepancy'' as well as excess lags in the $u$ and $r$ bands (which include the Balmer continuum and H$α$, respectively) suggest a mix of short lags from the disk and longer lags from nebular continuum originating in the broad-line region. The shorter \sw\, campaigns, 69~d on NGC\,4151 and 22~d on NGC\,4593, yield less well-defined, shorter lags $<2$~d. The NGC\,4593 lags are consistent with $τ(λ) \propto λ^{4/3}$ but with uncertainties too large for a strong test. For NGC\,4151 the \sw\, lags match $τ(λ) \propto λ^{4/3}$, with a small $U$-band excess, but the ground-based lags in the $r$, $i$, and $z$ bands are significantly shorter than the $B$ and $g$ lags, and also shorter than expected from the thin-disk prediction. The interpretation of this unusual lag spectrum is unclear. Overall these results indicate significant diversity in the $τ-λ$ relation across the optical/UV/NIR, which differs from the more homogeneous behavior seen in the \sw\, bands.

astro-ph.GA↗

arXiv2002

Flexural Plate Wave Devices Fabricated from Silicon Carbide Membranes

Flexural Plate Wave (FPW) devices fabricated from Silicon Carbide (SiC) membranes are presented here which exhibit electrical and mechanical characteristics in its transfer functions that makes it very useful as a low voltage probe device capable of functioning in small areas that are commonly inaccessible to ordinary devices. The low input impedance characteristic of this current driven device makes it possible for it to operate at very low voltages, thereby reducing the hazards for flammable or explosive areas to be probed. The Flexural Plate Wave (FPW) devices are of a family of gravimetric type sensors that permit direct measurements of the mass of the vibrating element. The primary objective was to study the suitability of Silicon Carbide (SiC) membranes as a replacement of Silicon Nitride (SiN) membrane in flexural plate wave devices developed by Sandia National Laboratories

cond-mat.mtrl-sci↗