arXiv subjects

Michele Spasaro

Publications and source records attributed to Michele Spasaro.

3 recordsLinked to original sources

arXiv2024

Benchmarking and Validation of Sub-mW 30GHz VG-LNAs in 22nm FDSOI CMOS for 5G/6G Phased-Array Receivers

Next-generation (5G/6G) wireless systems demand low-power mm-wave phased-array ICs. Variable-gain LNAs (VGLNAs) are key building blocks enabling hardware complexity reduction, performance enhancement and functionality extension. This paper reports a performance benchmarking of two low-power 30GHz VG-LNAs for phased-array ICs, which provide a 7.5dB gain control for 18dB Taylor taper in a 30GHz 8x8 antenna array, for a comprehensive validation of the new class of VGLNAs and its design methodology. In particular, this paper reports a second and implementation (VG-LNA2) with a reduced number (four) of gain-control back-gate voltages and super-low-Vt MOSFETs, with respect to the previous first implementation (VG-LNA1) with six gain-control back-gate voltages and regular- Vt MOSFETs, both in the same 22nm FDSOI CMOS technology. The results show that VG-LNA2 exhibits performance comparable to those of VG-LNA1, with a slightly lower power consumption. Overall, the performance benchmarking shows that the design methodology adopted for the new class of VG-LNAs leads to record low-power consumption and small form factor solutions reaching the targeted performances, regardless of the arrangements of the back-gate voltages for gain control and transistor sets, resulting in a comprehensive validation of the innovative design features and effective design methodology.

eess.SP↗

arXiv2024

Millimeter-Wave Integrated Silicon Devices: Active versus Passive -- The Eternal Struggle Between Good and Evil

With the extreme scaling, active devices in both CMOS and BiCMOS technologies have reached outstanding ft/fmax, enabling an ever-increasing number of existing and emerging applications in the microwave and millimeter wave (mm-wave) frequency range. The increase in transistors ft/fmax has been so much significant that the performance of microwave and mm-wave ICs are limited mainly by losses in passive devices. In this paper, we address a discussion on qualitative and quantitative aspects that may help to further unveil the impact of such losses on the overall circuit performance and stimulate the adoption of effective loss-aware design methodologies. As example, we report the results related to the design of low power mm-wave low noise amplifiers (LNAs). Our results show how, in low power regime, the performances of mm-wave LNAs are dominated by losses in passive components. We also show how loss-aware design methodologies can mitigate the performance degradation due to passives, resulting as an important tool to get the full potential out of the active devices available today.

eess.SP↗

arXiv2024

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS

This paper investigates the implementation of microwave and mm-wave integrated circuits for control and readout of electron/hole spin qubits, as elementary building blocks for future emerging quantum computing technologies. In particular, it summarizes the most relevant readout and control techniques of electron/hole spin qubits, addresses the feasibility and reports some preliminary simulation results of two blocks: transimpedance amplifier (TIA) and pulse generator (PG). The TIA exhibits a transimpedance gain of 108.5 dB Ohm over a -3dB bandwidth of 18 GHz, with input-referred noise current spectral density of 0.89 pA/root(Hz) at 10 GHz. The PG provides a mm-wave sinusoidal pulse with a minimum duration time of 20 ps.

quant-ph↗