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Minghao Shang

Publications and source records attributed to Minghao Shang.

4 recordsLinked to original sources

Integrated Photonic Devices in Thin-Film Barium Titanate: Opportunities and Challenges

Thin-film barium titanate (BaTiO3, or BTO) has emerged as a promising electro-optic (EO) material for integrated photonics due to its exceptionally large Pockels coefficients, low optical loss, and compatibility with heterogeneous integration. Recent advances in epitaxial thin-film growth, crystal orientation control, ferroelectric domain engineering, and scalable integration have enabled EO performance in thin-film BTO approaching bulk-like properties on photonic platforms. This review provides a comprehensive overview of integrated photonic devices based on thin-film BTO, including fundamental material properties, thin-film growth and integration strategies, passive waveguide configurations, EO response at both the film and device levels, and relevant optical applications. We review the role of film orientation, domain structure, and device geometry in determining accessible EO coefficients and modulation mechanisms, as well as the distinctions between intrinsic and effective EO responses demonstrated at the film and device levels. Representative studies are compared in terms of film-quality-related metrics and device performance figures of merit, alongside emerging applications realized in BTO-based platforms. Finally, we discuss the remaining challenges and outline future development directions toward high-performance BTO-based integrated photonic systems.

physics.optics

High Success Probability, Fidelity, and Purity Nonlinear Optical Two-Qubit Gates on Chip

Optical two-qubit gate with high success probability, fault-tolerant fidelity, and high-purity outputs is a fundamental yet unsolved challenge, essential for large-scale optical quantum computing toward quantum advantage. Here, we propose a feasible scheme for such gate using thin-film lithium niobate platform, enabling \c{hi}(2) nonlinear photon-photon interaction with 100% efficiency. By decoupling photon interaction and qubit flip operations, fidelity ceiling is removed, and output state purity is recovered by spectral-phase pre-compensation based on a full-spectral photon interaction model, yielding a CNOT gate with 84% success probability, 93% purity, and unity fidelity.

quant-ph

Graph Fourier Transformer with Structure-Frequency Information

Graph Transformers (GTs) have shown advantages in numerous graph structure tasks but their self-attention mechanism ignores the generalization bias of graphs, with existing methods mainly compensating for this bias from aspects like position encoding, attention bias and relative distance yet still having sub-optimal performance and being insufficient by only considering the structural perspective of generalization bias. To address this, this paper proposes Grafourierformer, which innovatively combines GT with inductive bias containing Frequency-Structure information by applying Graph Fourier Transform to the Attention Matrix: specifically, eigenvalues from the Graph Laplacian matrix are used to construct an Eigenvalue matrix mask (reflecting node positions and structural relationships with neighboring nodes to enable consideration of node range structural characteristics and focus on local graph details), and inverse Fourier transform is employed to extract node high-frequency and low-frequency features, calculate low-frequency and high-frequency energy, and construct a node frequency-energy matrix to filter the eigenvalue matrix mask, allowing attention heads to incorporate both graph structural information and node frequency information optimization, adaptively distinguish global trends from local details, and effectively suppress redundant information interference. Extensive experiments on various benchmarks show Grafourierformer consistently outperforms GNN and GT-based models in graph classification and node classification tasks, with ablation experiments further validating the effectiveness and necessity of the method. Codes are available at https://github.com/Arichibald/Grafourierformer.git

cs.LG

A Scheme for Deterministic N-photon State Generation Using Lithium Niobate on Insulator Device

Large-photon-number quantum state is a fundamental but non-resolved request for practical quantum information applications. Here we propose an N-photon state generation scheme that is feasible and scalable, using lithium niobate on insulator circuits. Such scheme is based on the integration of a common building block called photon-number doubling unit (PDU), for deterministic single-photon parametric down-conversion and up-conversion. The PDU relies on 10^7-optical-quality-factor resonator and mW-level on-chip power, which is within the current fabrication and experiment limits. N-photon state generation schemes, with cluster and GHZ state as examples, are shown for different quantum tasks.

quant-ph