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Munehiro Tada

Publications and source records attributed to Munehiro Tada.

2 recordsLinked to original sources

Liquid-Nitrogen Micropillar-Wick Cooling for Cryogenic Electronics: A Numerical Study of Thermal Performance and Capillary Dry-Out Limits

Cryogenic computing technologies are maturing rapidly, but heat removal remains a key challenge when increasing the device density and operating power. Two-phase evaporative cooling is a promising approach to solve this issue, because it can dissipate high heat fluxes while maintaining small temperature rises. Here, we numerically investigate liquid-$\mathrm{N_2}$-filled silicon micropillar wicks as a capillary-fed thin-film evaporation concept for cryogenic electronics. The model combines Young-Laplace meniscus calculations, Hertz-Knudsen-Schrage evaporation, unit-cell heat-transfer and liquid-flow simulations, and an array-level thermal and capillary-flow model. For a representative geometry with a pillar diameter of $10\,μ\mathrm{m}$, pitch of $24\,μ\mathrm{m}$, and pillar height of $75\,μ\mathrm{m}$ at an applied heat flux of $20\,\mathrm{W\,cm^{-2}}$, the predicted chip-temperature rise is approximately $2.7\,\mathrm{K}$. This is substantially below the estimated temperature rises for representative conduction cooling through an indium-interlayered copper heat sink and direct liquid-$\mathrm{N_2}$ immersion. The corresponding predicted single-fed dry-out length is approximately $2.7\,\mathrm{mm}$, equivalent to an ideal double-fed coolable width of approximately $5.3\,\mathrm{mm}$. The results indicate that local thermal performance is favorable, whereas lateral scalability is primarily constrained by capillary dry-out. An approximate capillary-viscous scaling relation provides a compact framework for comparing dry-out limits across working fluids and related wick geometries and for identifying strategies to extend capillary-fed transport.

physics.app-ph

Beyond the interface: Persistent Hopping Transport and Frequency Dispersion in Strong-inversion Cryogenic MOSFETs

Cryogenic complementary metal-oxide-semiconductor (cryo-CMOS) technology is essential for quantum computing interfaces, which require precise modeling of dynamic device behavior. The output impedance of MOS field-effect transistors (MOSFETs) is frequency dependent, which has been conventionally attributed to extrinsic parasitics. Here, we report an intrinsic frequency dispersion in the channel impedance of cryogenic MOSFETs that persists deep into the strong-inversion region. Through a Cole-Cole analysis, we characterize this dispersion as a depressed semicircle in the impedance plane and attribute its behavior to variable-range hopping through band-tail localized states. Unlike conventional models where band-tail states are confined to the oxide interface, we demonstrate that in MOSFETs with high channel doping the band-tail states are induced by ionized impurities and distributed throughout the depletion region. Our paradigm accounts for frequency dispersion under strong inversion. This work demonstrates that ionized-impurities-induced hopping governs the dynamic response of cryo-MOSFETs channel impedance even when drift conduction dominates, offering critical insights for accurate small-signal modeling and high-frequency cryo-CMOS circuit design.

cond-mat.mes-hall