arXiv subjects

Nika Teran

Publications and source records attributed to Nika Teran.

3 recordsLinked to original sources

arXiv2026

Channeling defect emission through topological Jackiw-Rebbi states in hBN

When two photonic structures of different topology are joined, an optical mode appears at their junction. Its existence depends only on this topological difference and not on the precise dimensions of either structure. Here we realize the photonic analogue of a Jackiw-Rebbi (JR) state in hexagonal boron nitride (hBN) hosting negatively charged boron vacancies, optically addressable spin defects. Two partially etched gratings, in which the order of the radiating and dark band-edge modes is reversed, are joined side by side. Angle-resolved reflectivity and photoluminescence reveal this reversal and a non-dispersive JR state at the junction. The state proves remarkably tolerant: despite fabrication errors of up to 20 nm, its wavelength lies within a 1 nm of the design, as predicted by a systematic numerical tolerance analysis. JR gratings therefore offer a robust, monolithic platform for controlling the emission of luminescent defects.

physics.optics↗

arXiv2026

Correlating spin and optical properties of quantum emitters in hBN

Optically addressable spin defects in hexagonal boron nitride (hBN) are well suited for near-surface quantum sensing. They offer bright, wavelength-tunable single-photon emission with high optically detected magnetic resonance (ODMR) contrast at room temperature. Here we controllably synthesise a high density of spin-complex defects in carbon-doped hBN flakes. We find that the zero-field splitting parameter D is directly correlated with the zero-phonon line of an emitter, while the ODMR contrast shows no such correlation. We further analyse an individual narrowband defect showing 68% ODMR contrast and enhance its photon collection by ~40% using a solid immersion lens. By advancing both the practical synthesis of the spin complexes and the understanding of their microscopic origin, our results move us toward the deterministic creation of ODMR-active quantum emitters

quant-ph↗

arXiv2026

In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission

Hexagonal boron nitride (hBN) has emerged as a leading host for optically active quantum defects. Yet introduction of specific impurity species other than carbon remains unexplored. Here, we demonstrate an in-situ silicon doping of hBN grown by high-temperature molecular beam epitaxy (HT-MBE). By systematically varying the growth temperature from 900 to 1390 °C under a constant silicon flux, we establish an optimal window for Si incorporation to host a diverse range of emitters from 430-750 nm at room temperature. By transferring silicon-doped hBN film on SiO$_2$ substrate, we verified that single photon emitter activity was sustained in the hBN, demonstrating compatibility with device integration. The plausible origins of the observed optical transitions were discussed, and several potential candidates were proposed. Our results demonstrate a step toward a comprehensive understanding of in-situ doping of hBN and its utilization for quantum photonic applications.

physics.optics↗