arXiv subjects

Pengji Li

Publications and source records attributed to Pengji Li.

5 recordsLinked to original sources

arXiv2025

Deterministic Integration of CsPbBr3 Quantum Dots with Plasmonic Ring Microcavities

Perovskite quantum dots hold great promise for quantum information processing as wavelength-tunable single photon sources operable over a broad temperature range. However, their deterministic integration into nanophotonic structures remains a major challenge, limited by their random spatial distribution and non-directional emission. In this work, we employ a two-step electron beam lithography process to deterministically place CsPbBr3 quantum dots within the mode volume of plasmonic ring microcavities. Simulations predict strong field enhancement within the cavity, boosting photon emission rates via the Purcell effect and improving the quantum efficiency of the emitters. Experimentally, coupling ensembles of CsPbBr3 quantum dots to the cavities results in a four-fold enhancement in photoluminescence intensity and a three-fold reduction in fluorescence lifetime at room temperature. Single-emitter coupling is further investigated at cryogenic temperatures, leading to a two-fold reduction in radiative lifetime. These results demonstrate a scalable approach for the integration of perovskite quantum dots into nanophotonic cavities and quantum photonic circuits.

physics.optics↗

arXiv2024

Sub-meV Linewidths in Polarized Low-Temperature Photoluminescence of 2D PbS Nanoplatelets

Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiting excitonic emission at 720 nm (1.7 eV) directly tying to the typical emission range limit of CdSe NPLs. Here, we present the first comprehensive analysis of low-temperature PL from this material class. Ultrathin 2D PbS NPLs exhibit high crystallinity confirmed by scanning transmission electron microscopy, and revealing Moire patterns in overlapping structures. At 4K, we observe unique PL features in single PbS NPLs, including narrow zero-phonon lines with line widths down to 0.6 meV and a linear degree of polarization up to 90%. Time-resolved measurements identify trions as the dominant emission source with a 2.3 ns decay time. Sub-meV spectral diffusion and no immanent blinking over minutes is observed, as well as discrete spectral jumps without memory effects. These findings advance the understanding and underpin the potential of colloidal PbS NPLs for optical and quantum technologies.

physics.optics↗

arXiv2024

Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs.

quant-ph↗

arXiv2022

Surface quantum dots with pure, coherent, and blinking-free single photon emission

The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $\mu$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing.

cond-mat.mes-hall↗

arXiv2021

Statistical limits for quantum networks with semiconductor entangled photon sources

Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swapping with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swapping based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality.

quant-ph↗