arXiv subjects

Pramod Kumar

Publications and source records attributed to Pramod Kumar.

At least 19 recordsLinked to original sources

arXiv2026

Direction-dependent photo-voltage detection in multifunctional ZnO micro rod/PBTTT-C14 polymer sensor due to gold nanoparticles

A sensor that can detect the direction of the incoming light plays a crucial role in further enhancing the versatility of the multifunction sensors for future applications, where the sensor can read multiple pieces of information, similar to the biological senses, like skin. A hybrid sensor based on an n-type ZnO micro-rod with p-type optically active organic polymer (PBTTT-C14) is developed for low-cost, large-area piezoelectric and optical sensing applications for future artificial electronic skin. The multi-functionality of the device is achieved due to the heterostructure configuration of vertically aligned piezoelectric ZnO micro rod arrays and PBTTT-C14 polymer between two gold electrodes. The deposition of the top gold electrode also led to the formation of two regions where it forms a continuous film and isolated gold particles (Au NPs). The isolated NPs, when activated, has shown surface plasmon resonance (SPR) and F\"orster resonance energy transfer (FRET), which generate a potential opposite to the normal working of the device, depending on the number of excited Au NPs by the incident light. The polarity flipping/opposite potential development can be attributed to the rise in electron density near the top Au contact due to the SPR and FRET mechanism of isolated Au NPs over the PBTTT-C14 which depends on the illumination direction. As a result, direction-dependent photo voltage polarity flipping was realized in the device. The device has produced piezoelectric and direction-dependent photovoltage flipping responses, leading the way for a multifunction sensor that can detect the direction of incident light and touch.

physics.app-ph↗

arXiv2026

Depletion to Enhancement Mode Transition and Strongly Suppressed Hysteresis in Surface Engineered Multilayer MoS2 FETs

Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted extensive research attention due to their promising compatibility with silicon based electronics. However, several key challenges still limit their practical integration. Two of the critical issues are (1) the intrinsic depletion-mode (normally on) operation of MoS2 field-effect transistors (FETs), and (2) the large hysteresis commonly observed in the transfer characteristics of MoS2 FETs due to the inherent sulfur defects. Addressing them is essential for CMOS compatible 2D-transistor technologies. In this work, we report for the first time that surface modification of the exfoliated multilayer MoS2 FETs with PBTTT C14 (poly(2,5 bis(3 tetradecylthiophen-2-yl)thieno[3,2 b]thiophene)), a p type conjugated organic polymer, converts the device from depletion mode to enhancement mode operation while simultaneously and strongly suppressing hysteresis. Specifically, the threshold voltage (Vth) shifts from -9.6 V to +5.9 V (total shift 15.5 V), and the hysteresis window decreases from 8.8 V to 1.3 V (85% reduction). This originates from interfacial charge transfer at the MoS2/PBTTT C14 interface, enabled by favourable band alignment. To further validate this charge transfer driven mechanism, P3HT (poly(3 hexylthiophene 2,5 diyl)) with similar energy levels to PBTTT C14 was employed, and it also showed similar enhancement-mode behaviour and hysteresis suppression.

physics.app-ph↗

arXiv2026

Gaia24ccy: An outburst followed the footsteps of its predecessor

Accretion-driven outbursts in young stellar objects remain poorly understood, largely limited by a statistically small sample of closely followed-up events. This underscores the importance of a thorough exploration of each outbursting object. We studied a peculiar outbursting system, Gaia24ccy, which exhibited two $\Delta g \sim$ 3.8 mag outbursts in 2019 and 2024. The system consists of two unresolved, nearly identical, and rapidly rotating young stars: Gaia24ccy A (1.1419 days) and Gaia24ccy B (1.7898 days). Periodogram analyses just before the onset of the outbursts suggest Gaia24ccy B to be the outbursting component. Unlike any previously known EXor sources, the two outburst profiles show a very similar evolution: both rose at the same rate for the first 15 days, followed by many 'sub-bursts' on the timescale of 10-20 days. The 2019 outburst lasted 145-255 days, while the 2024 outburst persisted for 367 days. We infer the unstable region to lie at $r_{\rm trigger} \simeq 0.019-0.047$ au ($\sim5-12.3 R_\star$). The accreted mass per event $M_{\rm acc}\sim10^{-5} M_\odot$ can be provided by a compact inner-disk reservoir. The photometric rise/decay timescales and the mid-infrared color evolution favor a thermal-viscous trigger in a hot inner disk, while the appearance of rich emission-line spectra indicates concurrent magnetospheric compression - together best described by a hybrid picture. Finally, we explain the reddening of the mid-infrared color observed during the outburst as a consequence of the competing emission from the viscous disk and the photosphere.

astro-ph.SR↗

arXiv2026

Resistive-Switching Dynamics in Poly(3-hexylthiophene-2,5-diyl) Thin Films under Perforated Bottom Electrode

The effect on the resistive switching (RS) mechanism in organic semiconductor (OSC), Poly(3-hexylthiophene-2,5-diyl) (P3HT), due to the presence of the perforated bottom electrode (PBE) is investigated. The simulation shows a high local electric field at the edges of a patterned bottom electrode (BE), which can increase the probability of metal filament formation due to high current density, suggesting that the use of a PBE can assist the RS mechanism. RS involves switching from the high resistive state (HRS) to the low resistive state (LRS) known as the "SET" process at higher positive bias, and returning to HRS from LRS is known as the "RESET" process, which can be achieved at a negative bias. Various switching mechanisms are segregated from each other by the obtained current response to applied voltage. RS due to the formation of complete metal filaments between the top and bottom electrodes showed Ohm's law behaviour. On the other hand, a slope of approximately 2 in the log-log plot signifies that the space charge limited current (SCLC) dominates the device, and hence RS comes from incomplete metal filament formation or some changes in the P3HT polymer itself. Similarly, high current density can transform the molecular arrangement from crystalline to an amorphous state due to joule heating, which leads to an intermediate OFF state. The high current density joule heating RS are from HRS to LRS, which is opposite to the metal filament based RS, hence it is called an inverted RS. The optical images of the fresh device and after multiple cycles indicate the metal percolation inside the OSC responsible for the RS. EDX spectrum at LRS in a cross-sectional transmission electron microscope (TEM) confirms the top metal percolation through the OSC and touches the BE. Therefore, the metal filament formation is the fundamental reason for these observed switching behaviours in P3HT.

cond-mat.mtrl-sci↗

arXiv2025

Unveiling the Dual Nature of V1180 Cas: UXor-like Dips and EXor-like Bursts Across a Decade

We present a detailed analysis of the long-term photometric and spectroscopic evolution of V1180 Cas over a decade, aiming to identify the dominant mechanisms behind its variability. We combine multi-band light curves from 1999 to 2025 with over 30 epochs of optical to near-infrared spectroscopy (0.5-2.5 $\mu$m), analyzing variability patterns, color behavior, and emission line diagnostics. We investigate the temporal evolution of accretion and outflow indicators and their correlation with photometric states. The light curve reveals a transition from sporadic early dimming events to a quasi-periodic pattern since 2018, with eleven major dips showing asymmetry and stochastic sub-structure. Color-magnitude diagrams show classic UXor-like blueing during deep minima, while near-infrared and mid-infrared color changes indicate thermal evolution of disk. Spectroscopic analysis reveals persistent hydrogen, Ca II, He I, and forbidden line emission. Accretion diagnostics track photometric variability, and forbidden lines often intensify during dips, implying a physical link between extinction and outflows. Estimated accretion rates range from $\sim10^{-8}-10^{-7}$ $M_\odot$yr$^{-1}$; the outflow rate and density diagnostics are consistent with disk winds and shock-excited jets. V1180 Cas demonstrates dual-mode variability driven by both variable circumstellar extinction and episodic accretion events. The hybrid UXor/EXor behavior, combined with evolving disk signatures and persistent outflows, suggests a young stellar object undergoing coupled accretion-extinction-outflow evolution. Continued monitoring will be essential to fully resolve the physical processes shaping its variability.

astro-ph.SR↗

arXiv2025

Design principles for metal-organic receptors targeting optical recognition of Pd(II) in environmental matrices

A precise detection of palladium (Pd) ions is a critical challenge with significant socio-economic implications across various industrial and chemical sectors. Due to its widespread use and poor biodegradability, Pd2+ accumulates in environmental ecosystems, posing severe risks to both the environment and living organisms. Consequently, there is a strong demand for selective, sensitive, and user-friendly detection methods. Among emerging strategies, optical detection techniques (both luminescent and colorimetric) using metal-based receptors have gained considerable attention. These sensors offer distinct advantages over traditional organic probes, including large Stokes shifts, long emission lifetimes, exceptional photostability, enhanced water solubility, recyclability, and remarkable chemical versatility. These attributes make them highly suitable for diverse applications in sensing and bioanalytical fields. This review provides a comprehensive overview of recent advancements in luminescent and colorimetric metal-based probes, including metal complexes and metal-organic frameworks (MOFs), for the selective detection of Pd2+. It discusses key design strategies, critical performance factors, and future prospects, offering valuable insights for researchers working on next-generation sensing platform.

cond-mat.mtrl-sci↗

arXiv2025

Simulation on the Miniaturization and Performance Improvement Study of Gr/MoS2 Based Vertical Field Effect Transistor

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high off-state current. Graphene (Gr) and transition metal di-chalcogenides (TMDs) are attractive materials for the next generation electronics. In this simulation work, the bulk molybdenum disulfide (MoS2) is sandwiched between perforated monolayer Gr which acts as the source electrode, and aluminum (Al) as the top drain electrode. In addition to this, the minimization of the off-state current is carried out by modifications in the source contact geometry by insulating some part of the source electrode and introducing the extra MoS2 layer between the source and gate dielectric named as buried layer. After the modification, the results show an improvement in OFF current, hence the ON/OFF ratio. The highest ON/OFF ratio of 109 is achieved with top side insulated source contact and thinnest buried layer of 02 nm with top and sidewall insulation. These results would support low voltage operation with high switching speed in complete 2D material based VFETs and further miniaturize its geometry.

physics.comp-ph↗

arXiv2023

Determining the most efficient geometry through simulation study of ZnO nanorods for the development of high-performance tactile sensors and energy harvesting devices

The piezoelectric nanomaterial ZnO exhibits an excellent piezoelectric response that can transduce mechanical energy into electrical signals by applying pressure. The piezoelectric behavior of ZnO nanostructures (especially nanorods or microrods) is getting considerable attention in the fabrications of piezo tactile sensors, energy harvesting devices, and other self-powering implantable devices. Especially vertically aligned ZnO nanorods are of high interest due to their higher value of piezoelectric coefficient along the z-direction. In this report, various geometries and alignments of ZnO nanorods are explored and their effect on strength of piezoelectric output potential has been simulated by COMSOL Multiphysics software. Best suited geometry and inclination are explored in this simulation to achieve high piezoelectric output in haptic and energy harvester devices. The simulation results show out of many geometries and inclinations the highest piezoelectric output is demonstrated by the inclined ZnO nanorods due to the application of higher torque force or shear stress in similar applied force. The high torque force or shear stress at 60 degree orientation and optimized contributions from all the piezoelectric coefficients resulted in a high piezoelectric output potential close to 215 mV which is much higher than the vertically aligned ZnO nanorod which is approximately 25 mV. The results are contrary to the accepted understanding that the vertical ZnO nanorods should produce the highest output voltage due to the high piezoelectric coefficient along the z-axis.

physics.app-ph↗

arXiv2023

Simulation study of various factors affecting the performance of Vertical Organic Field-Effect Transistors

Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with low-cost techniques which reduce the high processing costs and can also operate at high current density and relatively higher frequencies. To further improve the performance, high current density, and operating frequency the physics of charge carrier transport should be understood well with the simulation. The main problem with VOFET is the high off-current which is inevitable due to conduction from source to drain contact. There have been many efforts in reducing the off-state current by the addition of an insulating layer on top of the source electrode, which further increases the complexity and cost of processing. Simulations based on device geometry, contact barriers, and organic semiconductor parameters are carried out to study the charge carrier transport in VOFET. The simulation results show that the most important factor to enhance the performance is the device geometry or architecture, which requires a specific fill factor, a ratio between the exposed gate dielectric, and the total length with the source electrode. Optimized VOFET architecture is then simulated for variation in contact barrier and semiconductor parameters, which show some enhancement in performance but also a rise in off-state current density.

physics.app-ph↗

arXiv2021

Kondo-lattice-mediated interactions in flat band systems

Electronic flat bands represent a paradigmatic platform to realize strongly correlated matter due to their associated divergent density of states. In common instances, including electron-electron interactions leads to magnetic instabilities for repulsive interactions and superconductivity for attractive interactions. Nevertheless, interactions of Kondo nature in flat band systems have remained relatively unexplored. Here we address the emergence of interacting states mediated by Kondo lattice coupled to a flat band system. Combining dynamical mean-field theory and tensor networks methods to solve flat band Kondo lattice models in one and two dimensions, we show the emergence of a robust underscreened regime leading to a magnetically ordered state in the flat band. Our results put forward flat band Kondo lattice models as a platform to explore the genuine interplay between flat band physics and many-body Kondo screening.

cond-mat.str-el↗

arXiv2021

Dynamics of valence fluctuations in the extended periodic Anderson model

We have investigated the valence transition in the extended periodic Anderson model (EPAM) within the framework of dynamical mean field theory. Previous theoretical studies have indicated the presence of this transition in parameter ranges that are experimentally inaccessible. In this work, we show that, inclusion of dynamics beyond static mean-field brings the valence transition in physically relevant regimes. We show the strong dependence of the quasiparticle-weight scale across the sharp valence crossover. The density of states also exhibit concomitant large scale spectral weight transfers, which can be observed in experiments.

cond-mat.str-el↗

arXiv2020

Flat band induced non-Fermi liquid behavior of multicomponent fermions

We investigate multicomponent fermions in a flat band and predict experimental signatures of non-Fermi liquid behavior. We use dynamical mean-field theory to obtain the density, double occupancy and entropy in a Lieb lattice for $\mathcal{N} = 2$ and $\mathcal{N} = 4$ components. We derive a mean-field scaling relation between the results for different values of $\mathcal{N}$, and study its breakdown due to beyond-mean field effects. The predicted signatures occur at temperatures above the N\'eel temperature and persist in presence of a harmonic trapping potential, thus they are observable with current ultracold gas experiments.

cond-mat.quant-gas↗

arXiv2019

Effect of spin-orbit interaction on the vortex dynamics in LaAlO$_3$/SrTiO$_3$ interfaces near the superconducting transition

Controlling spin-orbit interaction and its effect on superconductivity has been a long-standing problem in two-dimensional inversion symmetry broken superconductors. An open challenge is to understand the role of various energy scales in shaping the complex phase diagram in these systems. From a combined experimental and theoretical study of resistance fluctuations and its higher order statistics, we propose a phase diagram for the superconducting phase in the magnetic-field--spin orbit interaction energy plane for the quasi-two dimensional electron gas at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. The relative variance of resistance fluctuations increases by few orders of magnitude below the spin-orbit field B$_{SO}$ and a non-Gaussian component to the fluctuations arises for fields below the upper critical field B$_{C2}$. Theoretical calculations show that the non-Gaussian noise predominantly arises due to percolative nature of the superconducting transition. We quantify the strength and the relative importance of the spin-orbit interaction energy, Zeeman energy and the pairing potential. Our work highlights the important role played by the interplay between these energy scales in framing the fascinating phases seen in two-dimensional inversion-symmetry-broken superconductors.

cond-mat.mes-hall↗

arXiv2019

Magnetization, d-wave superconductivity and non-Fermi liquid behavior in a crossover from dispersive to flat bands

We explore the effect of inhomogeneity on electronic properties of the two-dimensional Hubbard model on a square lattice using dynamical mean-field theory (DMFT). The inhomogeneity is introduced via modulated lattice hopping such that in the extreme inhomogeneous limit the resulting geometry is a Lieb lattice, which exhibits a flat-band dispersion. The crossover can be observed in the uniform sublattice magnetization which is zero in the homogeneous case and increases with the inhomogeneity. Studying the spatially resolved frequency-dependent local self-energy, we find a crossover from Fermi-liquid to non-Fermi-liquid behavior happening at a moderate value of the inhomogeneity. This emergence of a non-Fermi liquid is concomitant of a quasi-flat band. For finite doping the system with small inhomogeneity displays $d$-wave superconductivity coexisting with incommensurate spin-density order, inferred from the presence of oscillatory DMFT solutions. The $d$-wave superconductivity gets suppressed for moderate to large inhomogeneity for any finite doping while the incommensurate spin-density order still exists.

cond-mat.str-el↗

arXiv2018

Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface

Multiband transport in superconductors is interesting both from an academic as well as an application point of view. It has been postulated that interband scattering can significantly affect the carrier dynamics in these materials. In this article we present a detailed study of the electrical transport properties of the high-mobility two-dimensional electron gas residing at the interface of LaAlO$_3$/SrTiO$_3$, a prototypical multi-band superconductor. We show, through careful measurements of the gate dependence of the magnetoresistance and resistance fluctuations at ultra-low temperatures, that transport in the superconducting regime of this system has contributions from two bands which host carriers of very different characters. We identify a gate-voltage tunable Lifshitz transition in the system and show that the resistance fluctuations have strikingly different features on either side of it. At low carrier densities, resistance noise is dominated by number-density fluctuations arising from trapping-detrapping of charge carriers from defects in the underlying SrTiO$_3$ substrate, characteristic of a single-band semiconductor. Above the Lifshitz transition, the noise presumably originates from inter-band scattering. Our work highlights the importance of inter-band scattering processes in determining the transport properties of low-dimensional systems and projects resistance fluctuation spectroscopy as a viable technique for probing the charge carrier dynamics across a Lifshitz transition.

cond-mat.mes-hall↗

arXiv2018

Spin-Imbalanced Pairing and Fermi Surface Deformation in Flat Bands

We study the attractive Hubbard model with spin imbalance on two lattices featuring a flat band: the Lieb and kagome lattices. We present mean-field phase diagrams featuring exotic superfluid phases, similar to the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, whose stability is confirmed by dynamical mean-field theory (DMFT). The nature of the pairing is found to be richer than just the Fermi surface shift responsible for the usual FFLO state. The presence of a flat band allows for changes in the particle momentum distributions at null energy cost. This facilitates formation of nontrivial superfluid phases via multiband Cooper pair formation: the momentum distribution of the spin component in the flat band deforms to mimic the Fermi surface of the other spin component residing in a dispersive band. The Fermi surface of the unpaired particles that are typical for gapless superfluids becomes deformed as well. The results highlight the profound effect of flat dispersions on Fermi surface instabilities, and provide a potential route for observing spin-imbalanced superfluidity and superconductivity.

cond-mat.quant-gas↗

arXiv2017

Temperature and doping induced instabilities of the repulsive Hubbard model on Lieb lattice

The properties of a phase at finite interactions can be significantly influenced by the underlying dispersion of the non-interacting Hamiltonian. We demonstrate this by studying the repulsive Hubbard model on the $2$D Lieb lattice, which has a flat band for vanishing interaction $U$. We perform real-space dynamical mean-field theory calculations at different temperatures and dopings using a continuous time quantum Monte Carlo impurity solver. Studying the frequency dependence of the self-energy, we show that a finite temperature non-magnetic non-Fermi liquid behavior is a concomitant of the flat band singularity. At half-filling we also find a magnetically ordered region, where the order parameter varies linearly with the interaction strength, and a strongly correlated Mott insulating phase. The double occupancy decreases sharply for small $U$, highlighting the flat band contribution. Away from half-filling, we observe the stripe order, i.e. an inhomogeneous spin and charge density wave of finite wavelength which turns into a sub-lattice ordering at higher temperatures.

cond-mat.str-el↗

arXiv2017

Stabilization of self-mode-locked quantum dash lasers by symmetric dual-loop optical feedback

We report experimental studies of the influence of symmetric dual-loop optical feedback on the RF linewidth and timing jitter of self-mode-locked two-section quantum dash lasers emitting at 1550 nm. Various feedback schemes were investigated and optimum levels determined for narrowest RF linewidth and low timing jitter, for single-loop and symmetric dual-loop feedback. Two symmetric dual-loop configurations, with balanced and unbalanced feedback ratios, were studied. We demonstrate that unbalanced symmetric dual loop feedback, with the inner cavity resonant and fine delay tuning of the outer loop, gives narrowest RF linewidth and reduced timing jitter over a wide range of delay, unlike single and balanced symmetric dual-loop configurations. This configuration with feedback lengths 80 and 140 m narrows the RF linewidth by 4-67x and 10-100x, respectively, across the widest delay range, compared to free-running. For symmetric dual-loop feedback, the influence of different power split ratios through the feedback loops was determined. Our results show that symmetric dual-loop feedback is markedly more effective than single-loop feedback in reducing RF linewidth and timing jitter, and is much less sensitive to delay phase, making this technique ideal for applications where robustness and alignment tolerance are essential.

physics.ins-det↗