arXiv subjects

S. Mathew

Publications and source records attributed to S. Mathew.

8 recordsLinked to original sources

arXiv2022

Vectorial probing of electric and magnetic transitions in variable optical environments and vice-versa

We use europium doped single crystalline NaYF$_4$ nanorods for probing the electric and magnetic contributions to the local density of optical states (LDOS). Reciprocically, we determine intrinsic properties of the emitters (oscillator strength, quantum yield) by comparing their measured and simulated optical responses in front of a mirror. We first experimentally determine the specifications of the nanoprobe (orientation and oscillator strength of the electric and magnetic dipoles moments) and show significant orientation sensitivity of the branching ratios associated with electric and magnetic transitions. In a second part, we measure the modification of the LDOS in front of a gold mirror in a Drexhage's experiment. We discuss the role of the electric and magnetic LDOS on the basis of numerical simulations, taking into account the orientation of the dipolar emitters. We demonstrate that they behave like degenerated dipoles sensitive to polarized partial LDOS.

cond-mat.mes-hall↗

arXiv2021

Measuring the magnetic dipole transition of single nanorods by spectroscopy and Fourier microscopy

Rare-earth doped nanocrystals possess optical transitions with significant either electric or magnetic dipole characters. They are of strong interest for understanding and engineering light-matter interactions at the nanoscale with numerous applications in nanophotonics. Here, we study the $^5$D$_0\rightarrow ^7$F$_1$ transition dipole vector in individual NaYF$_4$:Eu$^{3+}$ nanorod crystals by Fourier and confocal microscopies. {Single crystalline host matrix leads to narrow emission lines at room temperature that permit to separate Stark sublevels resulting from the crystal field splitting}. We observe a fully magnetic transition and {low variability} of the transition dipole orientation over several single nanorods. We estimate the proportion of the dipole transitions for the Stark sublevels. We also determine an effective altitude of the rod with respect to the substrate. The narrow emission lines characteristic of NaYF$_4$:Eu$^{3+}$ ensure well-defined electric or magnetic transitions, and are thus instrumental for probing locally their electromagnetic environment by standard confocal microscopy.

cond-mat.mes-hall↗

arXiv2017

Structure and lattice dynamics of the wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$

We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in the lattice dynamics between MgSiN$_{2}$, MgGeN$_{2}$ and AlN, for example we find that the highest phonon frequency in MgSiN$_{2}$ is about 100~cm$^{-1}$ higher than the highest frequency in AlN and that MgGeN$_{2}$ is much softer. We also provide the Born effective charge tensors and dielectric tensors of MgSiN$_{2}$, MgGeN$_{2}$ and AlN. Phonon related thermodynamic properties, such as the heat capacity and entropy, are in very good agreement with available experimental results.

cond-mat.mtrl-sci↗

arXiv2012

Magnetism in MoS2 induced by MeV proton irradiation

Molybdenum disulphide, a diamagnetic layered dichalcogenide solid, is found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam. The temperature dependence of magnetization displays ferrimagnetic behavior with a Curie temperature of 895 K. A disorder mode corresponding to a zone-edge phonon and a Mo valence higher than +4, have been detected in the irradiated samples using Raman and X-ray photoelectron spectroscopy, respectively. The possible origins of long-range magnetic ordering in irradiated MoS2 samples are discussed.

cond-mat.mtrl-sci↗

arXiv2011

Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces

Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520{\deg}C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550{\deg}C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.

cond-mat.mes-hall↗

arXiv2011

The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation

The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a thermal model for the production of damage by the ion beam. We propose a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism.

cond-mat.mes-hall↗

arXiv2008

Source region of the 2003 November 18 CME that led to the strongest magnetic storm of cycle 23

The super-storm of November 20, 2003 was associated with a high speed coronal mass ejection which originated in the NOAA AR 10501 on November 18. This coronal mass ejection had severe terrestrial consequences leading to a geomagnetic storm with DST index of -472 nT, the strongest of the current solar cycle. In this paper, we attempt to understand the factors that led to the coronal mass ejection on November 18. We have also studied the evolution of the photospheric magnetic field of NOAA AR 10501, the source region of this coronal mass ejection. For this purpose, the MDI line-of-sight magnetograms and vector magnetograms from Solar Flare Telescope, Mitaka, obtained during November, 17-19, 2003 were analysed. In particular, quantitative estimates of the temporal variation in magnetic flux, energy and magnetic field gradient were estimated for the source active region. The evolution of these quantities was studied for the 3-day period with an objective to understand the pre-flare configuration leading up to the moderate flare which was associated with the geo-effective coronal mass ejection. We also examined the chromospheric images recorded in H-alpha from Udaipur Solar Observatory to compare the flare location with regions of different magnetic field and energy. Our observations provide evidence that the flare associated with the CME occurred at a location marked by high magnetic field gradient which led to release of free energy stored in the active region.

astro-ph↗

arXiv2005

Magnetism in C60 Films Induced by Proton Irradiation

It is shown that polycrystalline fullerene thin films on hydrogen passivated Si(111) substrates irradiated by 2 MeV protons displays ferromagnetic-like behavior at 5 K. At 300 K both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range 2 - 300 K, in 1 Tesla applied field, for the irradiated film shows much stronger temperature dependence compared to the pristine film. Possible origin of ferromagnetic-like signals in the irradiated films are discussed.

cond-mat.mtrl-sci↗